High-reliability discrete products and engineering services since 1977 MCR69 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, gate open) MCR69-1 MCR69-2 MCR69-3 Value Unit 25 50 100 V VDRM VRRM Peak discharge current (2) ITM 750 A On-state RMS current (180° conduction angles, TC = 85°C) IT(RMS) 25 A Average on-state current (180° conduction angles, TC = 85°C) IT(AV) 16 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 375 Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C) IGM 2.0 A Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C) PGM 20 W Forward average gate power (t = 8.3ms, TC = 85°C) A 300 A2s PG(AV) 0.5 W Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C - 8.0 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Ratings apply for tw = 1ms. Note 3: Test conditions: IG = 150mA, VD = rated VDRM, ITM = rated value, TJ = 125°C. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 1.5 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W Lead solder temperature (lead length 1/8” from case, 10s max) TL 260 °C Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR69 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max - - 10 2.0 - 6.0 1.8 - 2.0 7.0 30 - 0.65 1.5 0.2 0.40 - Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TC = 25°C TC = 125°C IDRM, IRRM µA mA ON CHARACTERISTICS Peak forward on-state voltage* (ITM = 50A)(4) (ITM = 750A, tw = 1ms)(5) VTM Gate trigger current (continuous dc) (VAK = 12V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (VAK = 12V, RL = 100Ω) VGT Gate non-trigger voltage (VAK = 12V, RL = 100Ω, T J = 125°C) VGD Holding current (VD = 12V, initiating current = 200mA, gate open) IH Latching current (VD = 12V, IG = 150mA) IL Gate controlled turn-on time(6) (VD = rated VDRM, IG = 150mA) (ITM = 50A peak) tgt V mA V V mA 3.0 15 50 - - 60 - 1.0 - 10 - - - - 100 mA µs DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, gate open, exponential waveform, TJ = 125°C) dv/dt Critical rate of rise of on-state current(6) (IG = 150mA, TJ = 125°C) di/dt V/µs A/µs Note 4: Pulse width ≤ 300µs, duty cycle ≤ 2%. Note 5: Ratings apply for tw = 1ms. Note 6: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR69 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR69 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR69 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115