MCR16N.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR16N
SILICON CONTROLLED RECTIFIER
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
Value
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open)
Rating
VDRM
VRRM
800
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
16
Unit
V
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
Circuit fusing consideration (t = 8.3ms)
I2t
106
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM
5.0
W
Forward average gate power (t = 8.3ms, TC = 80°C)
PG(AV)
0.5
W
A
160
Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)
IGM
2.0
A
Operating temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
1.5
°C/W
Thermal resistance, junction to ambient
RӨJA
62.5
°C/W
TL
260
°C
Maximum lead temperature for soldering purposes
1/8” from case for 10s
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
-
-
0.01
2.0
-
-
1.7
2.0
10
20
0.5
0.65
1.0
4.0
25
40
-
30
60
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak on-state voltage*
(ITM = 32A)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
Holding current
(VD = 12V, gate open, initiating current = 200mA)
IH
Latch current
(VD = 12V, Ig = 20mA)
IL
V
mA
V
mA
mA
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
MCR16N
SILICON CONTROLLED RECTIFIER
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
dv/dt
Critical rate of rise of on-state current
(IPK = 50A, Pw = 30µsec, diG/dt = 1A/µs, Igt = 50mA)
di/dt
100
300
-
-
-
50
V/µs
A/µs
* Pulse width≤ 2.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
MCR16N
SILICON CONTROLLED RECTIFIER
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
MCR16N
SILICON CONTROLLED RECTIFIER
Rev. 20130108