High-reliability discrete products and engineering services since 1977 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) Peak repetitive reverse voltage (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR8SD MCR8SM MCR8SN VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) Value Unit V 400 600 800 8 A Peak non-repetitive surge current (one half-cycle, sine wave, 60Hz, TJ = 110°C) ITSM Circuit fusing (t = 8.3ms) I2t 26.5 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 5 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W IGM 2 A Operating temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) A 80 Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W TL 260 °C Maximum lead temperature for soldering purposes 1/8” from case for 10s ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max - - 10 500 - - 1.8 5.0 25 200 Unit OFF CHARACTERISTICS Peak forward blocking current or reverse blocking current(2) (VD = Rated VDRM or VRRM, RGK = 1kΩ) TJ = 25°C TJ = 110°C IDRM, IRRM µA ON CHARACTERISTICS Peak on-state voltage(3) (ITM = 16A) VTM Gate trigger current (continuous dc) (4) (VD = 12V, RL = 100Ω) IGT V µA Rev. 20121228 High-reliability discrete products and engineering services since 1977 Characteristic MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS Symbol Holding current (4) (VD = 12V, gate open, initiating current = 200mA) IH Latch current (4) (VD = 12V, IG = 200µA) IL Gate trigger voltage (continuous dc) (4) (VD = 12V, RL = 100Ω) TJ = 25°C TJ = -40°C VGT Min Typ Max - 0.5 6.0 - 0.6 8.0 0.3 - 0.65 - 1.0 1.5 5.0 15 - - - 100 Unit mA mA V DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = 67% VDRM, RGK = 1KΩ, C GK = 0.1µF, TJ = 110°C) dv/dt Critical rate of rise of on-state current (IPK = 50A, PW = 40µsec, diG/dt = 1 A/µsec, Igt = 10mA) di/dt V/µs A/µs * Pulse width≤ 2.0ms, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Pin out See below Rev. 20121228 High-reliability discrete products and engineering services since 1977 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS Rev. 20121228 High-reliability discrete products and engineering services since 1977 MCR8SD, MCR8SM, MCR8SN SILICON CONTROLLED RECTIFIERS Rev. 20121228