2N6400 2N6405.aspx?ext=

2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive off-state voltage (1)
(TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM
VRRM
On-state RMS current
(180° conduction angles), TC = 100°C)
IT(RMS)
Average on-state current
(180° conduction angles, TC = 100°C)
IT(AV)
Peak non-repetitive surge current
(1/2 cycle, sine wave 60Hz, TJ = 90°C)
ITSM
Circuit fusing (t = 8.3ms)
I2t
Forward peak gate power
(pulse width ≤ 1.0µs, TC = 100°C)
PGM
Forward average gate power
(t = 8.3ms, TC = 100°C)
PG(AV)
Value
Unit
50
100
200
400
600
800
Volts
Amps
16
Amps
10
Amps
160
A2s
145
Watts
20
Watts
0.5
Forward peak gate current
(Pulse width ≤ 1.0µs, T C = 100°C)
IGM
Operating junction temperature range
TJ
-40 to 125
°C
Storage temperature range
Tstg
-40 to 150
°C
1.
Amps
2.0
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on
the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds
Symbol
Max
Unit
RӨJC
1.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM, IRRM
-
-
10
2.0
µA
mA
-
-
1.7
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(VAK = rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak forward on-state voltage
(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
VTM
Volts
Rev. 20120924
High-reliability discrete products
and engineering services since 1977
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TC = 25°C)
ON CHARACTERISTICS
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 100ohms)
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 100ohms)
Gate non-trigger voltage
(VD = 12Vdc, RL = 100ohms)
Holding current
(VD = 12Vdc, initiating current = 200mA, gate open)
TC = 25°C
TC = -40°C
IGT
-
9.0
-
30
60
mA
TC = 25°C
TC = -40°C
VGT
-
0.7
-
1.5
2.5
Volts
0.2
-
-
-
18
-
40
60
-
1.0
-
-
15
35
-
-
50
-
TC = 125°C
TC = 25°C
TC = -40°C
Turn-on time
(ITM = 16A, IGT = 40mAdc, VD = rated VDRM)
Turn-off time
(ITM = 16A, IR = 16A, VD = rated VDRM)
VGD
IH
tgt
TC = 25°C
TJ= 125°C
tq
Volts
mA
µs
µs
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(VD = rated VDRM, exponential waveform)
TJ = 125°C
dv/dt
V/µs
Rev. 20120924
High-reliability discrete products
and engineering services since 1977
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20120924
High-reliability discrete products
and engineering services since 1977
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Rev. 20120924
High-reliability discrete products
and engineering services since 1977
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Rev. 20120924
High-reliability discrete products
and engineering services since 1977
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Rev. 20120924