2N6400-2N6405 SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage (1) (TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM VRRM On-state RMS current (180° conduction angles), TC = 100°C) IT(RMS) Average on-state current (180° conduction angles, TC = 100°C) IT(AV) Peak non-repetitive surge current (1/2 cycle, sine wave 60Hz, TJ = 90°C) ITSM Circuit fusing (t = 8.3ms) I2t Forward peak gate power (pulse width ≤ 1.0µs, TC = 100°C) PGM Forward average gate power (t = 8.3ms, TC = 100°C) PG(AV) Value Unit 50 100 200 400 600 800 Volts Amps 16 Amps 10 Amps 160 A2s 145 Watts 20 Watts 0.5 Forward peak gate current (Pulse width ≤ 1.0µs, T C = 100°C) IGM Operating junction temperature range TJ -40 to 125 °C Storage temperature range Tstg -40 to 150 °C 1. Amps 2.0 VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds Symbol Max Unit RӨJC 1.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min Typ Max Unit IDRM, IRRM - - 10 2.0 µA mA - - 1.7 OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current (VAK = rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak forward on-state voltage (ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%) VTM Volts Rev. 20120924 High-reliability discrete products and engineering services since 1977 2N6400-2N6405 SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C) ON CHARACTERISTICS Gate trigger current (continuous dc) (VD = 12Vdc, RL = 100ohms) Gate trigger voltage (continuous dc) (VD = 12Vdc, RL = 100ohms) Gate non-trigger voltage (VD = 12Vdc, RL = 100ohms) Holding current (VD = 12Vdc, initiating current = 200mA, gate open) TC = 25°C TC = -40°C IGT - 9.0 - 30 60 mA TC = 25°C TC = -40°C VGT - 0.7 - 1.5 2.5 Volts 0.2 - - - 18 - 40 60 - 1.0 - - 15 35 - - 50 - TC = 125°C TC = 25°C TC = -40°C Turn-on time (ITM = 16A, IGT = 40mAdc, VD = rated VDRM) Turn-off time (ITM = 16A, IR = 16A, VD = rated VDRM) VGD IH tgt TC = 25°C TJ= 125°C tq Volts mA µs µs DYNAMIC CHARACTERISTICS Critical rate of rise of off state voltage (VD = rated VDRM, exponential waveform) TJ = 125°C dv/dt V/µs Rev. 20120924 High-reliability discrete products and engineering services since 1977 2N6400-2N6405 SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20120924 High-reliability discrete products and engineering services since 1977 2N6400-2N6405 SILICON CONTROLLED RECTIFIERS Rev. 20120924 High-reliability discrete products and engineering services since 1977 2N6400-2N6405 SILICON CONTROLLED RECTIFIERS Rev. 20120924 High-reliability discrete products and engineering services since 1977 2N6400-2N6405 SILICON CONTROLLED RECTIFIERS Rev. 20120924