High-reliability discrete products and engineering services since 1977 2N4441-2N4444 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage(1) 2N4441 2N4442 2N4443 2N4444 VRRM, VDRM Value 50 200 400 600 Unit Volts Non repetitive peak reverse blocking voltage (t = 5ms (max.) duration) 2N4441 2N4442 2N4443 2N4444 VRSM Forward current RMS (all conduction angles) IT(RMS) 8 Amps Average on state current, TC = 73°C IT(AV) 5.1 Amps Peak non-repetitive surge current (1/2 cycle, 60Hz preceded and followed by rated current and voltage) ITSM Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms I2t 25 A2s Forward peak gate power PGM 5 Watts Average gate power 75 300 500 700 80 Volts Amps PG(AV) 0.5 Watts Forward peak gate current IGM 2 Amps Peak reverse gate voltage VRGM 10 Volts Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +150 °C - 8 In. lb. (2) Mounting torque (6-32 screw) Note 1: Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. Soldering temperatures shall not exceed 225°C. THERMAL CHARACTERISTICS Symbol Typical Maximum Unit Thermal resistance, junction to case Characteristic RӨJC - 2.5 °C/W Thermal resistance, junction to ambient RӨJA 40 - °C/W Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N4441-2N4444 SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Gate trigger voltage (continuous dc) (VD = 7 Vdc, RL = 100 Ω) (VD = 7 Vdc, RL = 100 Ω) (VD = Rated VDRM, RL = 100 Ω) Symbol TC = 25°C TC = -40°C TC = 100°C Peak on state voltage (pulse width = 1 to 2ms, duty cycle ≤ 2%) (ITM = 5A peak) (ITM = 15.7A peak) VGT VTM Holding current (VD = 7Vdc, gate open) TC = 25°C TC = -40°C IH Gate controlled turn-on time (ITM = 5A, IGT = 20mA, VD = rated VDRM) tgt Circuit commutated turn-off time (ITM = 5A, IR = 5A) (ITM = 5A, IR = 5A, TJ = 100°C) tq Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, TJ = 100°C, gate open) dv/dt Min. Typ. Max. 0.2 0.75 - 1.5 2.5 - - 1 - 1.5 2 - 6 - 40 70 - 1 - - 15 20 - - 50 - Unit Volts Volts mA µs µs V/µs Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N4441-2N4444 SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-127 Marking: Body painted, alpha-numeric Pin out: See below TO-127 A B C D F G H J K M Q R U V Inches Min Max 0.635 0.645 0.495 0.505 0.125 0.135 0.043 0.049 0.138 0.148 0.166 BSC 0.105 0.115 0.032 0.034 0.595 0.645 9° TYP 0.185 0.195 0.075 0.085 0.245 0.255 0.080 - Millimeters Min Max 16.130 16.380 12.570 12.830 3.180 3.430 1.090 1.240 3.510 3.760 4.220 BSC 2.670 2.920 0.813 0.864 15.110 16.380 9° TYP 4.700 4.950 1.910 2.160 6.220 6.480 2.030 - Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N4441-2N4444 SILICON CONTROLLED RECTIFIERS Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N4441-2N4444 SILICON CONTROLLED RECTIFIERS Rev. 20130117