IRF430 Data Sheet March 1999 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 4.5A, 500V Formerly developmental type TA17415. Ordering Information IRF430 • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol PACKAGE TO-204AA 1572.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND D IRF430 NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF430 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg IRF430 500 500 4.5 3.0 18 ±20 75 0.6 300 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V ±100 nA - - 25 µA Gate to Source Leakage Current IGSS VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V On-State Drain Current (Note 2) ID(ON) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 4.5 - - A - 1.3 1.500 Ω 2.5 3.2 - S ID = 2.5A, VGS = 10V (Figures 8, 9) VDS ≥ 10V, ID = 2.7A (Figure 12) VDD = 250V, ID ≈ 4.5A, RG = 12Ω, RL = 50Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD Internal Source Inductance LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 2 VGS = 10V, ID ≈ 6.0A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) from the Flange and the Source Bonding Pad Free Air Operation Modified MOSFET Symbol Showing the Internal Devices Inductances - 11 17 ns - 15 23 ns - 35 53 ns - 15 23 ns - 22 32 nC - 3.5 - nC - 11 - nC - 600 - pF - 100 - pF - 30 - pF - 5.0 - nH - 12.5 - nH - - 0.83 oC/W - - 30 oC/W D LD G LS S IRF430 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current TEST CONDITIONS ISD Pulse Source to Drain Current (Note 3) Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode ISDM D MIN TYP MAX UNITS - - 4.5 A - - 18 A G Source to Drain Diode Voltage (Note 2) VSD TJ trr TJ QRR TJ Reverse Recovery Time Reverse Recovery Charge S o = 25 C, ISD = 4.5A, VGS = 0V (Figure 13) = 25oC, ISD = 4.5A, dISD/dt = 100A/µs = 25oC, ISD = 4.5A, dISD/dt = 100A/µs - - 1.4 V 180 370 760 ns 0.96 2 4.3 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 25mH, RG = 25Ω, peak IAS = 4.5A. See Figures 15, 16. Typical Performance Curves Unless Otherwise Specified 5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 3 2 1 0.2 0 4 0 50 100 0 25 150 50 TC , CASE TEMPERATURE (oC) 75 125 100 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 2 1.0 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE 0.01 10-5 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 0.1 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 3 1 10 IRF430 Typical Performance Curves Unless Otherwise Specified (Continued) 6 100 VGS = 5.5V 10 10µs 100µs 1ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 VGS = 10V 5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10ms 100ms DC 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 4 VGS = 5V 3 2 VGS = 4.5V 1 VGS = 4V 0 1000 200 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA ID, DRAIN CURRENT (A) 5 VGS = 10V 80µs PULSE TEST VGS = 5.5V 4 VGS = 5V 3 VGS = 4.5V 2 1 VGS = 4V VDS > ID(ON) x rDS(ON) MAX 3 125oC 25oC -55oC 2 1 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 80µs PULSE TEST DUTY CYCLE ≤ 2% 4 0 0 10 0 4 2.2 VGS = 10V VGS = 20V 3 2 1 5 10 15 ID, DRAIN CURRENT (A) 20 2 3 4 5 6 7 FIGURE 7. TRANSFER CHARACTERISTICS NORMALIZED DRAI TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE 1 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 0 300 FIGURE 5. OUTPUT CHARACTERISTICS ID(ON), ON-STATE DRAIN CURRENT (A) 5 80µs PULSE TEST 25 ID = 1.5A VGS = 10V 1.8 1.4 1.0 0.6 0.2 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF430 Typical Performance Curves Unless Otherwise Specified (Continued) 2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 1600 1200 CISS 800 400 COSS CRSS 0.75 -40 40 0 80 120 0 160 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 5 100 ISD, SOURCE TO DRAIN CURRENT (A) 4 TJ = 25oC TJ = 125oC 3 2 1 80µs PULSE TEST TJ = 150oC 10 TJ = 25oC 1 0 0 1 2 3 ID , DRAIN CURRENT (A) 4 0 5 1 2 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 4.5A VDS = 100V VDS = 250V VDS = 400V 15 10 5 0 0 8 16 24 32 40 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5 3 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) gfs , TRANSCONDUCTANCE (S) FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE TJ = -55oC 80µs PULSE TEST 50 4 IRF430 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 6 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF430 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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