IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS(ON) = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17425. IRF440 2308.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND Symbol IRF440 D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF440 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain To Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain To Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate To Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF440 500 500 8.0 5.0 32 ±20 125 1.0 510 -55 to 150 UNITS V V A A A V W W/oC A oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain To Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) 25 µA - 250 µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = ±20V ID = 4.4A, VGS = 10V (Figures 8, 9) VDS = 50V, ID = 4.4A (Figure 12) VDD = 250V, ID ≈ 8.0A, RG = 9.1Ω, RL = 30Ω, (Figure 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 8.0 - - A - - ±100 nA - 0.70 0.850 Ω 4.9 7.5 - S 15 21 ns 22 35 ns td(OFF) - 49 74 ns tf - 20 30 ns - 42 63 nC - 9 - nC - 22 - nC - 1225 - pF - 200 - pF Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS LD Internal Source Inductance - - - Qg(TOT) Internal Drain Inductance - VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - tr Turn-Off Delay Time VDS = Rated BVDSS, VGS = 0V LS VGS = 10V, ID = 8.0A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die Measured from the Source Lead, 6mm (0.25in) from Header and Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances - 85 - pF - 5.0 - nH - 12.5 - nH - - 1.0 oC/W - - 30 oC/W D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 2 Free Air Operation IRF440 Source To Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier MIN TYP MAX UNITS - - 8.0 A - - 32 A D G S Drain to Source Diode Voltage (Note 2) VSD Reverse Recovery Time Reverse Recovery Charge TJ = 25oC, ISD = 8.0A, VGS = 0V (Figure 13) - - 2.0 V trr TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 210 460 970 ns QRR TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 2 4 8.9 µC NOTE: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25Ω, peak IAS = 8.0A (Figures 15, 16). Typical Performance Curves POWER DISSIPATION MULTIPLIER 1.2 10 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 8 6 4 2 0 25 50 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC , TRANSIENT THERMAL IMPEDANCE 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 10-3 10-5 PDM SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-4 10-3 0.1 10-2 RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 3 1 10 IRF440 Typical Performance Curves (Continued) 15 102 100µs 10 1ms OPERATION IN THIS AREA LIMITED BY rDS(ON) 1 10ms TC = 25oC TJ = 150oC SINGLE PULSE 0.1 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10µs VGS = 6V 12 9 VGS = 5.5V 6 VGS = 5V 3 VGS = 4V V GS = 4.5V DC 0 102 10 0 103 50 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 10 VGS = 6V VGS = 5.5V VGS = 5V 3 VGS = 4V 0 CURRENT (A) IDS(ON), DRAIN TO SOURCE ID, DRAIN CURRENT (A) 12 6 250 1 TJ = 150oC 0.1 TJ = 25oC VGS = 4.5V 10-2 0 3 6 9 12 0 15 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 3.0 8 VGS = 10V 6 4 VGS = 20V 2 0 8 16 24 32 ID , DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4 40 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 80µs PULSE TEST 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 FIGURE 7. TRANSFER CHARACTERISTICS 10 ON RESISTANCE 200 VDS ≥ 50V 80µs PULSE TEST VGS = 10V 9 150 FIGURE 5. OUTPUT CHARACTERISTICS 15 80µs PULSE TEST 100 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) rDS(ON), DRAIN TO SOURCE 80µs PULSE TEST VGS = 10V ID = 8.0A VGS = 10V 2.4 1.8 1.2 0.6 0 -60 0 60 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 180 IRF440 Typical Performance Curves (Continued) 3000 1.25 1.15 1.05 0.95 0.85 1800 CISS 1200 COSS 600 CRSS 0.75 -60 0 60 120 TJ, JUNCTION TEMPERATURE (oC) 15 9 TJ = 150oC 6 3 3 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) TJ = 25oC 0 1 100 VDS ≥ 50V 80µs PULSE TEST 12 0 0 180 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 6 9 ID , DRAIN CURRENT (A) 12 15 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 2400 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA ID = 8.0A 10 TJ = 150oC 1 0.1 0 0.3 0.6 0.9 1.2 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 0 0 12 24 36 48 Qg(TOT), TOTAL GATE CHARGE (nC) 60 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5 TJ = 25oC 1.5 IRF440 Test Circuits and Waveforms VDS BVDSS tP L VDS IAS VARY tP TO OBTAIN VDD + RG REQUIRED PEAK IAS - VGS VDD DUT tP 0V 0 IAS 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% + RG - 10% 10% 0 VDD 90% 90% DUT VGS 0 50% 50% PULSE WIDTH 10% VGS FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) CURRENT REGULATOR VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D Ig(REF) VDS DUT G 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 6 VGS Ig(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF440 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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