2317

NTE2317
Silicon NPN Transistor
High Voltage Fast Switching Power Darlington
TO−3PN Type Package
Description:
The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration
mounted in a TO−3PN type package designed for use in automotive ignition applications and inverter
circuits for motor controls. Controlled performances in the linear region make this device particularly
suitable for car ignitions where current limiting is achieved desaturing the darlington.
Features:
D High Performance Electronic Ignition Darlington
D High Ruggedness
Applications:
D Automotive Market
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08C/W
Rev. 2−15
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
450
−
−
V
VCE = 500V,
TJ = +125C VBE = 0,
−
−
1
mA
−
−
5
mA
ICEO
VCE = 450V, IB = 0
−
−
1
mA
IEBO
IC = 0, VEB = 5V
−
−
50
mA
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0
Collector Cutoff Current
Emitter Cutoff Current
ICES
TJ = +25C
ON Characteristics
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 150mA
−
−
1.8
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 150mA
−
−
2.2
V
DC Current Gain
hFE
IC = 5A, VCE = 10V
300
−
−
Diode Forward Voltage
VF
IF = 10A
−
−
2.8
.189 (4.8)
.614 (15.6)
.787
(20.0)
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
B
.215 (5.45)
C
E
V