VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 PRODUCT SUMMARY VCES 600 V VCE(ON) typical at IC = 50 A 1.8 V IC at TC = 98 °C 50 A Speed 30 kHz to 150 kHz NPT Warp2 PFC IGBT with low VCE(ON) Silicon carbide PFC diode Antiparallel FRED Pt® fast recovery Integrated thermistor Square RBSOA Low internal inductances Low switching loss UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Package EMIPAK2 Circuit Dual mode PFC VS-EMG050J60N is an integrated solution for dual stage PFC converter in a single package. The EMIPAK2 package is easy to use thanks to the solderable terminals and provides improved thermal performance thanks to the exposed substrate. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum operating junction temperature SYMBOL TEST CONDITIONS MAX. TJ 150 Storage temperature range TStg -40 to +125 RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 UNITS °C V PFC IGBT Q1 - Q2 Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 ICM 150 Pulsed collector current Clamped inductive load current Continuous collector current Power dissipation ILM (1) IC PD 150 TC = 25 °C 88 TC = 80 °C 60 TC = 25 °C 338 TC = 80 °C 189 V A W ANTIPARALLEL DIODE D1 - D2 Diode continuous forward current Single pulse forward current Power dissipation IF IFSM PD TC = 25 °C 16 TC = 80 °C 11 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 59 TC = 25 °C 29 TC = 80 °C 16 A W PFC DIODE D3 - D4 Repetitive peak reverse voltage Diode continuous forward current Single pulse forward current Power dissipation VRRM IF IFSM PD 600 TC = 25 °C 25 TC = 80 °C 17 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 140 TC = 25 °C 74 TC = 80 °C 41 V A W Notes • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C Revision: 05-Apr-16 Document Number: 93495 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS PFC IGBT Q1 - Q2 Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage BVCES VGE = 0 V, IC = 500 μA 600 - - V BVCES/TJ VGE = 0 V, IC = 500 μA (25 °C to 125 °C) - 0.1 - V/°C VGE = 15 V, IC = 27 A - 1.44 1.75 VGE = 15 V, IC = 50 A - 1.8 2.1 VGE = 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05 - 2.2 2.5 2.9 3.9 5.3 -10 - - 95 - s - 5.9 - V Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) VCE = VGE, IC = 250 μA VGE(th)/TJ VCE = VGE, IC = 1 mA ( 25 °C to 125 °C) - Forward transconductance gfe VCE = 20 V, IC = 50 A Transfer characteristics VGE VCE = 20 V, IC = 50 A Zero gate voltage collector current ICES Gate to emitter leakage current IGES VGE = 15 V, IC = 50 A, TJ = 125 °C Temperature coefficient of threshold voltage V mV/°C VGE = 0 V, VCE = 600 V - 3 100 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3 mA VGE = ± 20 V, VCE = 0 V - ± 200 nA IF = 20 A - 2.19 2.4 IF = 20 A, TJ = 125 °C - 1.93 2.15 ANTIPARALLEL DIODE D1 - D2 Forward voltage drop VF V PFC DIODE D3 - D4 Cathode to anode breakdown voltage Reverse leakage current Forward voltage drop VBR IRM VF IR = 500 μA 600 - - V VR = 600 V - 27 250 μA mA VR = 600 V, TJ = 125 °C - 0.1 1 IF = 10 A - 1.34 1.63 IF = 10 A, TJ = 125 °C - 1.36 1.65 MIN. TYP. MAX. - 480 720 - 82 164 - 160 260 - 0.155 - - 0.471 - - 0.626 - - 196 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS UNITS PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE) Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf IC = 70 A VCC = 400 V VGE = 15 V IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 25 °C (1) - 29 - - 220 - - 67 - nC mJ ns Revision: 05-Apr-16 Document Number: 93495 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS MIN. TYP. MAX. - 0.182 - IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 125 °C (1) - 0.615 - - 0.797 - - 198 - VGE = 0 V VCC = 30 V f = 1 MHz - 29 - - 227 - tf - 75 - Input capacitance Cies - 9500 - Output capacitance Coes - 780 - Reverse transfer capacitance Cres - 116 - Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 150 A VCC = 400 V, VP = 600 V Rg = 22 , VGE = 15 V to 0 V UNITS mJ ns pF Fullsquare ANTIPARALLEL DIODE D1 - D2 Diode reverse recovery time trr Diode peak reverse current Irr Diode reverse charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode reverse charge Qrr - 65 110 ns VR = 200 V IF = 20 A dl/dt = 500 A/μs, TJ = 25 °C - 11 15 A - 350 825 nC VR = 200 V IF = 20 A dl/dt = 500 A/μs, TJ = 125 °C - 83 130 ns - 15 20 A - 587 1300 nC ns PFC DIODE D3 - D4 Diode reverse recovery time trr Diode peak reverse current Irr Diode reverse charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode reverse charge Qrr VR = 200 V IF = 10 A dl/dt = 200 A/μs, TJ = 25 °C - 43 - - 2.13 - A - 45.5 - nC VR = 200 V IF = 10 A dl/dt = 200 A/μs, TJ = 125 °C - 44 - ns - 2.14 - A - 46.5 - nC Note (1) Energy losses include “tail” and diode reverse recovery. INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS R25 TC = 25 °C 5000 R100 TC = 100 °C 493 ± 5 % R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s Resistance B-value Maximum operating temperature B25/50 Revision: 05-Apr-16 Document Number: 93495 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. - - 0.37 Q1 - Q2 PFC IGBT - Junction to case thermal resistance (per switch) D1 - D2 AP diode - Junction to case thermal resistance (per diode) UNITS - - 4.29 D3 - D4 PFC diode - Junction to case thermal resistance (per diode) - - 1.69 Q1 - Q2 PFC IGBT - Case to sink thermal resistance (per switch) - 0.31 - - 3.66 - D3 - D4 PFC diode - Case to sink thermal resistance (per diode) - 1.1 - Mounting torque (M4) 2 - 3 Nm Weight - 39 - g RthJC RthCS (1) D1 - D2 AP diode - Case to sink thermal resistance (per diode) °C/W 100 VGE = 15 V 90 TJ = 125 °C 80 70 IC (A) 60 TJ = 150 °C 50 TJ = 25 °C 40 30 20 10 Allowable Case Temperature (°C) Note (1) Mounting surface flat, smooth, and greased 160 140 120 DC 100 80 60 40 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 93495_01 0 Fig. 1 - Typical PFC IGBT Output Characteristics 20 40 60 80 100 IC - Continuous Collector Current (A) 93495_03 Fig. 3 - Maximum DC PFC IGBT Collector Current vs. Case Temperature per Junction 100 4.0 VGE = 15 V TJ = 125 °C 90 3.5 80 VGE = 8 V VGE = 10 V VGE = 12 V VGE = 15 V VGE = 18 V 60 50 40 VCE (V) IC (A) 100 A 3.0 70 30 2.5 50 A 2.0 1.5 27 A 20 1.0 10 0 0.5 0 93495_02 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE (V) Fig. 2 - Typical PFC IGBT Output Characteristics 10 93495_04 60 110 160 TJ (°C) Fig. 4 - Typical PFC IGBT Collector to Emitter Voltage vs. Junction Temperature Revision: 05-Apr-16 Document Number: 93495 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors 100 1 VCE = 20 V 90 80 0.1 125 °C ICES (mA) 70 ICE (A) 60 TJ = 125 °C 50 40 TJ = 25 °C 0.01 25 °C 30 0.001 20 10 0 3 4 5 6 7 VGE (V) 93495_05 0.0001 100 8 200 300 Fig. 5 - Typical PFC IGBT Transfer Characteristics 400 500 600 VCES (V) 93495_08 Fig. 8 - Typical PFC IGBT Zero Gate Voltage Collector Current 4.5 100 90 TJ = 25 °C 80 4.0 60 IF (A) Vgeth (V) 70 3.5 50 40 3.0 TJ = 125 °C 30 TJ = 125 °C TJ = 25 °C 20 2.5 10 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC (mA) 93495_06 0 1.5 100 10 1 0.1 2.0 2.5 3.0 3.5 4.0 VFM (V) Fig. 9 - Typical Antiparallel Diode Forward Characteristics Allowable Case Temperature (°C) 1000 IC (A) 1.0 93495_09 Fig. 6 - Typical PFC IGBT Gate Threshold Voltage 160 140 120 100 DC 80 60 40 20 0.01 0 1 93495_07 0.5 10 100 VCE (V) Fig. 7 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V, Rg = 22 1000 0 93495_10 2 4 6 8 10 12 14 16 18 IF - Continuous Forward Current (A) Fig. 10 - Maximum DC Antiparallel Diode Forward Current vs. Case Temperature per Junction Revision: 05-Apr-16 Document Number: 93495 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors 50 1.8 1.6 40 1.4 TJ = 25 °C 1.2 Energy (mJ) IF (A) 30 TJ = 125 °C 20 1.0 Eoff 0.8 0.6 0.4 10 Eon 0.2 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VFM (V) 93495_11 0 40 60 80 100 IC (A) Fig. 14 - Typical PFC IGBT Energy Loss vs. IC (with Freewheeling D3 - D4 PFC Diode) TJ = 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 1000 160 140 120 100 td(off) Switching Time (ns) Allowable Case Temperature (°C) Fig. 11 - Typical PFC Diode Forward Characteristics DC 80 60 40 td(on) 100 tf tr 20 0 10 0 5 10 15 20 25 0 30 IF - Continuous Forward Current (A) 93495_12 0.1 130 trr (ns) 125 °C 0.001 80 100 110 125 °C 90 25 °C 25 °C 0.0001 93495_13 60 Fig. 15 - Typical PFC IGBT Switching Time vs. IC (with Freewheeling D3 - D4 PFC Diode) TJ = 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 150 0.01 40 IC (A) 1 0.00001 100 20 93495_15 Fig. 12 - Maximum DC PFC Diode Forward Current vs. Case Temperature per Junction IR (mA) 20 93495_14 70 200 300 400 500 50 100 600 VR (V) Fig. 13 - Typical PFC Diode Reverse Leakage Current 93495_16 200 300 400 500 dIF/dt (A/μs) Fig. 16 - Typical Antiparallel Reverse Recovery Time vs. dIF/dt VR = 200 V, IF = 20 A Revision: 05-Apr-16 Document Number: 93495 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors 17 70 15 60 13 50 125 °C 125 °C trr (ns) Irr (A) 11 9 40 25 °C 30 7 20 5 3 100 200 300 400 10 100 500 dIF/dt (A/μs) 93495_17 200 300 400 500 dIF/dt (A/μs) 93495_19 Fig. 19 - Typical PFC Diode Reverse Recovery Time vs. dIF/dt VR = 200 V, IF = 10 A Fig. 17 - Typical Antiparallel Reverse Recovery Current vs. dIF/dt VR = 200 V, IF = 20 A 600 4.5 550 3.5 125 °C 450 Irr (A) Qrr (nC) 500 400 125 °C 2.5 350 300 1.5 25 °C 250 200 100 93495_18 200 300 400 0.5 100 500 dIF/dt (A/μs) 200 400 500 dIF/dt (A/μs) 93495_20 Fig. 18 - Typical Antiparallel Reverse Recovery Charge vs. dIF/dt VR = 200 V, IF = 20 A 300 Fig. 20 - Typical PFC Diode Reverse Recovery Current vs. dIF/dt VR = 200 V, IF = 10 A 50 48 125 °C Qrr (nC) 46 44 42 40 38 36 100 93495_21 200 300 400 500 dIF/dt (A/μs) Fig. 21 - Typical PFC Diode Reverse Recovery Charge vs. dIF/dt VR = 200 V, IF = 10 A Revision: 05-Apr-16 Document Number: 93495 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) 93495_22 Fig. 22 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) 93495_23 Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics (Antiparallel Diode) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.00001 93495_24 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (PFC Diode) Revision: 05-Apr-16 Document Number: 93495 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- EM G 050 J 60 N 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Package indicator (EM = EMIPAK2) 3 - Circuit configuration (G = dual mode PFC) 4 - Current rating (050 = 50 A) 5 - Die technology (J = Warp2 IGBT) 6 - Voltage rating (60 = 600 V) 7 - N = ultrafast TYPICAL CONNECTION Note • Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only. Revision: 05-Apr-16 Document Number: 93495 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMG050J60N www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION D3 11 17 33 35 Q1 D1 6 5 13 24 14 Th 15 23 Q2 D2 2 1 D4 27 30 28 36 PACKAGE 6 2 5 1 13 14 15 11 33 36 30 24 23 17 28 35 27 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95436 Revision: 05-Apr-16 Document Number: 93495 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors EMIPAK2 DIMENSIONS in millimeters 15.2 12.7 8.9 Front view 55 ± 0.3 Pins position with tolerance Ø 1 ± 0.1 M4 Ø 0.4 5.1 14 11.4 10.2 7.6 7.6 6.4 3.8 2.6 1.3 13.3 3.2 1.9 1.3 5.1 2.5 6.3 Detail “A” Scale 10:1 Detail “A” 5° F 14 F 7 15.9 12.1 8.3 5.7 39 ± 0.3 5 62 ± 0.3 41.5 23 53 62 ± 0.3 Ø2 Ø 12.1 20.5 ± 1 3 ref. Top view 9.5 9.5 15.9 10.8 Side view 7 Ø 4.3 5.7 1.9 12 20.5 ± 1 17 ± 1 3.8 16.8 8.9 10.1 12.7 11.4 16.5 16.5 20.3 20.3 24.1 24.1 23.8 40.6 58 ± 0.3 Ceramic gap Flat metal plate or with optional M4 thread Document Number: 95436 Revision: 27-Jan-11 0.1 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000