Band Switching Diode 1SS356 Applications High frequency switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 2.5±0.2 1.7±0.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability 0.9MIN. 2.1 0.8MIN. 1.25±0.1 UMD2 Construction Silicon epitaxial planar 0.7±0.2 0.1 0.3±0.05 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol IF Forward current (DC) VR Reverse voltage (DC) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Forward operating resistance www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. Limits Unit mA V °C °C 100 35 125 55 to 125 Min. Typ. Max. Unit - - 1.0 V Conditions IF=10mA IR - - 10 nA VR=25V Ct - - 1.2 pF rf - - 0.9 Ω VR=6V , f=1MHz IF=2mA , f=100MHz 1/3 2011.08 - Rev.D Data Sheet 1SS356 100 Ta=125℃ 10 10 f=1MHz 10 Ta=125℃ Ta=25℃ 1 Ta=25℃ 0.1 0.01 0.001 Ta=75℃ 1 0.1 Ta=25℃ 0.01 Ta=25℃ 0.001 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1 0.1 0 10 20 30 40 50 0 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS 15 20 840 830 820 AVE:0.833V 810 0.09 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 10 25 30 0.1 Ta=25℃ IF=10mA n=30pcs f=100MHz 1 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 850 10 FORWARD OPERATING RESISTANCE:rf(Ω) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Ta=75℃ Ta=25℃ VR=25V n=30pcs 0.08 0.07 0.06 0.05 0.04 0.03 AVE:0.0116nA 0.02 0.01 0 800 0.1 1 10 FORWARD CURRENT : IF(mA) rf-IF CHARACTERISTICS 0.7 0.6 0.5 0.4 0.3 0.2 Ifsm 8.3ms 10 5 AVE:5.60A 0 1 AVE:1.20ns 0.6 0.5 0.4 0.3 0.2 AVE:0.602Ω 100 9 Ifsm PEAK SURGE FORWARD CURRENT : I FSM(A) 0.7 2 trr DISPERSION MAP 10 Ta=25℃ f=100MHz IF=2mA n=10pcs 0.8 3 IFSM DISRESION MAP 1 0.9 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs 4 0 Ct DISPERSION MAP FORWARD OPERATING RESISTANCE:rf(Ω) 1cyc 15 AVE:0.807pF 0 0.1 REVERSE RECOVERY TIME:trr(ns) 0.8 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25℃ VR=6V f=1MHz n=10pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 5 20 1 0.1 IR DISPERSION MAP VF DISPERSION MAP 8 8.3ms 7 PEAK SURGE FORWARD CURRENT : I FSM(A) 0.1 0.01 8.3ms 1cyc 6 5 4 3 2 1 0 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. t 10 1 1 FORWARD CURRENT : IF(mA) rf DISPERSION MAP Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2/3 100 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 2011.08 - Rev.D Data Sheet 1SS356 10 1000 9 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 8 7 6 AVE:6.63kV 5 4 3 0 1 0.01 0.1 1 10 AVE:0.88kV 2 1 300us 0.001 ELECTROSTATIC DDISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) 100 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 2011.08 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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