Schottky barrier diode RB751CS-40 zDimensions (Unit : mm) zApplications Low current rectification zLand size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.9±0.05 1.0±0.05 zFeatures 1) Ultra Small mold type(VMN2) 2) Low VF 0.45 0.5 0.6±0.05 3) High reliability VM D2 0.37±0.03 0.35±0.1 zStructure Silicon epitaxial planer zStructure R O H M :V M N 2 dot (year w eek factory) + day zTaping dimensions (Unit : mm) 2±0.05 0.7±0.05 2±0.05 φ1.55 0.2±0.05 8.0±0.2 1.1±0.05 3.5±0.05 1.75±0.1 4±0.1 φ0.5 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak(60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Limits Unit V V mA mA 40 30 30 200 125 -40 to +125 Symbol VF IR Min. - Ct - Typ. 2 1/3 0.52 4.0±0.1 ℃ ℃ Max. 0.37 Unit V 0.5 µA - pF Conditions IF=1mA VR=30V VR=1V , f=1MHz 2009.12 - Rev.A RB751CS-40 Data Sheet zElectrical characteristic curves 100000 100 10 Ta=125°C Ta=125°C 1 Ta=25°C Ta=-25°C 0.1 0.01 10000 Ta=25°C 100 Ta=-25°C 10 1 0.1 1 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 30 35 0 40 Ta=25°C VR=30V n=30pcs 310 300 290 AVE:304.2mV 800 700 600 500 400 300 AVE:111.0nA 200 5 4 3 2 1 0 AVE:1.81pF Ct DISPERSION MAP 10 1cyc 8.3ms 10 AVE:3.40A 5 0 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 30 Ifsm 15 10 AVE:11.7ns 5 Ifsm 8 8.3ms 4 2 1 trr DISPERSION MAP IFSM DISRESION MAP Ifsm t 6 4 2 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.05 Rth(j-a) 0.04 Rth(j-c) 100 Mounted on epoxy board IF=100mA IM=10mA 1ms FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 8 8.3ms 1cyc 6 0 0 10 30 6 IR DISPERSION MAP 15 25 Ta=25°C f=1MHz VR=0V n=10pcs 7 0 VF DISPERSION MAP 20 20 8 100 280 15 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 REVERSE CURRENT:IR(nA) 320 10 10 1000 Ta=25°C IF=1mA n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 330 FORWARD VOLTAGE:VF(mV) Ta=75°C 1000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=75°C 10 0.03 D=1/2 Sin(θ=180) 0.02 DC 0.01 time 300us 10 0.001 0 0.01 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 2/3 1000 0 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2009.12 - Rev.A RB751CS-40 0.1 0.002 D=1/2 DC 0.001 Sin(θ=180) 0.1 0.08 0A Io 0V VR t T 0.06 D=t/T VR=20V Tj=125°C DC 0.04 D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.003 Data Sheet 0.08 10 20 30 REVERSE VOLTAGE:V R(V) VR-PR CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 40 0 25 VR 0.06 T DC D=t/T VR=20V Tj=125°C D=1/2 0.04 0.02 Sin(θ=180) 0 0 Io 0V t Sin(θ=180) 0 0A 50 75 100 AMBIENT TEMPERATURE : Ta(°C) Derating Curve"(Io-Ta) 3/3 125 0 0 25 50 75 100 CASE TEMPARATURE:Tc(°C) Derating Curve"(Io-Tc) 125 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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