81

NTE81
Silicon NPN Transistor
Dual Differential Amp, General Purpose Switch
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 575mW
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.29mW/°C
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57mW/°C
Total Device Dissipation (TC = +25°C), PD
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RΘJC
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA
One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304°C/W
All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280°C/W
Coupling Factors
Q1 – Q2
Junction–to–Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57%
Junction–to–Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0%
Q1 – Q3 or Q1 – Q4
Junction–to–Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55%
Junction–to–Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0%
Note 1. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 2
30
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
Collector Cutoff Current
Base Cutoff Current
ICEV
VCE = 50V, VBE(off) = 3V
15
–
–
nA
IBL
VCE = 50V, VEB(off) = 3V
30
–
–
nA
hFE
IC = 0.1mA, VCE = 10V
20
50
–
IC = 1.0mA, VCE = 10V
25
55
–
IC = 10mA, VCE = 10V
35
65
–
IC = 150mA, VCE = 1.0V
20
65
–
IC = 150mA, VCE = 10V
40
30
120
IC = 300mA, VCE = 10V
25
75
–
IC = 150mA, IB = 15mA
–
0.2
0.4
V
IC = 300mA, IB = 30mA
–
0.35
1.2
V
IC = 150mA, IB = 15mA
0.6
0.95
1.3
V
IC = 300mA, IB = 30mA
–
–
2.0
V
IC = 20mA, VCE = 20V,
f = 100MHz
200
250
–
MHz
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 100kHz
–
3.5
8.0
pF
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 100kHz
–
15
20
pF
VCC = 30V, IC = 150mA,
VBE(off) = 0.5V, IB1 = 15mA
–
–
15
µs
–
–
30
µs
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
–
–
250
µs
–
–
60
µs
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.200
(5.08)
.500
(12.7)
Min
.019 (0.48) Dia Typ
3
2
1
5
45°
7
.200 (5.06)
Dia
6
.031 (.792)
Pin4 and Pin8 Omitted
Pin 1.
2.
3.
5.
6.
7.
C1
B1
E1
E2
B2
C2