NTE81 Silicon NPN Transistor Dual Differential Amp, General Purpose Switch Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 575mW All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.29mW/°C All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57mW/°C Total Device Dissipation (TC = +25°C), PD One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RΘJC One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304°C/W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280°C/W Coupling Factors Q1 – Q2 Junction–to–Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57% Junction–to–Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0% Q1 – Q3 or Q1 – Q4 Junction–to–Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55% Junction–to–Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0% Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Collector Cutoff Current Base Cutoff Current ICEV VCE = 50V, VBE(off) = 3V 15 – – nA IBL VCE = 50V, VEB(off) = 3V 30 – – nA hFE IC = 0.1mA, VCE = 10V 20 50 – IC = 1.0mA, VCE = 10V 25 55 – IC = 10mA, VCE = 10V 35 65 – IC = 150mA, VCE = 1.0V 20 65 – IC = 150mA, VCE = 10V 40 30 120 IC = 300mA, VCE = 10V 25 75 – IC = 150mA, IB = 15mA – 0.2 0.4 V IC = 300mA, IB = 30mA – 0.35 1.2 V IC = 150mA, IB = 15mA 0.6 0.95 1.3 V IC = 300mA, IB = 30mA – – 2.0 V IC = 20mA, VCE = 20V, f = 100MHz 200 250 – MHz ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cobo VCB = 10V, IE = 0, f = 100kHz – 3.5 8.0 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 100kHz – 15 20 pF VCC = 30V, IC = 150mA, VBE(off) = 0.5V, IB1 = 15mA – – 15 µs – – 30 µs VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – – 250 µs – – 60 µs Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .370 (9.39) Dia Max .335 (8.52) Dia Max .200 (5.08) .500 (12.7) Min .019 (0.48) Dia Typ 3 2 1 5 45° 7 .200 (5.06) Dia 6 .031 (.792) Pin4 and Pin8 Omitted Pin 1. 2. 3. 5. 6. 7. C1 B1 E1 E2 B2 C2