ROHM QS8M11

Data Sheet
4V Drive Nch + Pch MOSFET
QS8M11
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT8
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
(8)
(7)
(6) (5)
(1)
(2)
(3) (4)
Abbreviated symbol : M11
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
QS8M11
Taping
TR
3000

(8)
(7)
(6)
∗1
∗1
Parameter
Drain-source voltage
Source current
(Body Diode)
Limits
Tr1 : N-ch Tr2 : P-ch
30
VDSS
Unit
30
V
V
VGSS
20
20
Continuous
ID
3.5
3.0
A
Pulsed
Continuous
IDP
Is
*1
12
1.0
12
1.0
A
A
Pulsed
Isp
*1
12
12
A
Gate-source voltage
Drain current
(1)
Symbol
Power dissipation
Channel temperature
Range of storage temperature
PD
Tch
Tstg
*2
1.5
W / TOTAL
1.25
150
55 to +150
W / ELEMENT
C
C
(1) Tr1 SOURCE
(2) Tr1 GATE
(3) Tr2 SOURCE
(4) Tr2 GATE (5) Tr2 DRAIN
(6) Tr2 DRAIN
(7) Tr1 DRAIN
(8) Tr1 DRAIN
∗2
∗2
 Absolute maximum ratings (Ta = 25C)
(5)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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1/8
2011.02 - Rev.A
Data Sheet
QS8M11
 Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
Conditions
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
-
35
50
ID=3.5A, VGS=10V
RDS (on)*
-
45
65
m ID=3.5A, VGS=4.5V
50
70
Forward transfer admittance
l Yfs l
2.2
-
-
S
VDS=10V, ID=3.5A
Input capacitance
Ciss
-
180
-
pF
VDS=10V
Zero gate voltage drain current
ID=3.5A, VGS=4V
Output capacitance
Coss
-
70
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
35
-
pF
f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
ID=1.7A, VDD 15V
tr
-
25
-
ns
VGS=10V
td(off)
-
25
-
ns
RL=8.8
Rise time
Turn-off delay time
Fall time
tf
-
7
-
ns
RG=10
Total gate charge
Qg
-
3.5
-
nC
ID=3.5A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs
Qgd
-
1.0
1.0
-
nC
nC
VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=3.5A, VGS=0V
*Pulsed
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2/8
2011.02 - Rev.A
Data Sheet
QS8M11
 Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
30
IDSS
Conditions
-
-
V
ID=1mA, VGS=0V
-
1
A
VDS=30V, VGS=0V
-
2.5
V
VDS=10V, ID=1mA
Gate threshold voltage
VGS (th)
1.0
Static drain-source on-state
resistance
-
55
75
RDS (on)*
-
85
115
-
95
125
Forward transfer admittance
l Yfs l *
2.4
-
-
S
VDS=10V, ID=3A
Input capacitance
Ciss
-
480
-
pF
VDS=10V
ID=3A, VGS=10V
m ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4.0V
Output capacitance
Coss
-
70
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
70
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
7
-
ns
ID=1.5A, VDD 15V
tr *
-
18
-
ns
VGS=10V
td(off) *
-
50
-
ns
RL=10
Rise time
Turn-off delay time
Fall time
tf *
-
35
-
ns
RG=10
Total gate charge
Qg *
-
5.2
-
nC
ID=3A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.6
1.6
-
nC
nC
VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=3A, VGS=0V
*Pulsed
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3/8
2011.02 - Rev.A
Data Sheet
QS8M11
 Electrical characteristics curves
<Tr1(Nch)>
VGS= 10V
VGS= 4.5V
VGS= 4.0V
2
1.5
1
VGS= 2.5V
0.5
VGS= 2.0V
0.4
0.6
0.8
2
VGS= 4.5V
VGS= 4.0V
1.5
1
VGS= 2.5V
VGS= 2.0V
0.5
VDS= 10V
Pulsed
1
Ta= 125℃
Ta= 75°C
Ta= 25°C
0.1
Ta= - 25°C
0.01
0.001
0
2
4
6
8
10
0
1
2
3
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Pulsed
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
10
0.1
1
1000
VGS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
100
Ta= - 25°C
10
10
0.1
1
DRAIN-CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
0.1
1
VGS= 4.5V
Pulsed
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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Ta= 125°C
Ta= 75°C
Ta= 25°C
100
Ta= - 25°C
10
10
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
100
1000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
VGS= 4.0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Ta= 25°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
10
10
VDS= 10V
Pulsed
1
SOURCE CURRENT : Is [A]
1000
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Ta=25℃
Pulsed
2.5
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
0.2
VGS= 10V
0
0
0
3
DRAIN CURRENT : ID[A]
2.5
10
3.5
Ta=25℃
Pulsed
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
3
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
VGS=0V
Pulsed
1
Ta= 125°C
0.1
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
0.1
1
10
0
0.5
1
1.5
DRAIN-CURRENT : ID[A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
4/8
2011.02 - Rev.A
80
60
40
20
Ta=25°C
1000
VGS=10V
RG=10
td(off)
100
Pulsed
10
tr
1
2
4
6
8
10
0.01
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN CURRENT : ID (A)
100
Ciss
100
Crss
Coss
f=1MHz
10
6
Ta=25°C
VDD= 15V
4
ID= 3.5A
RG=10
2
Pulsed
0
0
2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
PW =100us
1
PW =1ms
PW = 10ms
0.1
Ta = 25°C
Mounted on a CERAMIC board
0.01
1
8
10
Single Pulse : 1Unit
10
0.1
10
10
Operation in this area is limited by
RDS(ON) (VGS=10V)
VGS=0V
0.01
1
DRAIN-CURRENT : ID[A]
1000
Ta=25°C
0.1
Fig.11 Switching Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
CAPACITANCE : C [pF]
VDD=15V
tf
td(on)
0
GATE-SOURCE VOLTAGE : VGS [V]
ID= 1.75A Ta=25°C
ID= 3.5A Pulsed
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
10000
100
0
100
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
DC operation
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
Data Sheet
QS8M11
Fig.14 Maximum Safe Operating Area
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
0.01
Rth(ch-a) = 100 °C/W
<Mounted on a CERAMIC board>
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2011.02 - Rev.A
Data Sheet
QS8M11
 Electrical characteristics curves
<Tr2(Pch)>
3
Ta=25°C
2
Pulsed
VGS= 3.0V
1
VGS= 2.5V
10
VGS= 10V
VGS= 4.5V
VGS= 4.0V
2
1
VGS= 2.5V
0.4
0.6
0.8
1
0
100
10
1
8
0
Ta= 125°C
Ta= - 25°C
100
10
0.1
Ta= 25°C
Ta= - 25°C
100
10
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Ta= 75°C
1
VGS= 4.5V
Pulsed
Ta= 75°C
Ta= - 25°C
100
10
0.1
1
10
DRAIN-CURRENT : ID[A]
VDS= 10V
Pulsed
1
Ta= 125°C
Ta= 25°C
10
10
Ta= 25°C
Ta=25°C
Ta=75°C
Ta=125°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
10
VGS=0V
Pulsed
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= - 25°C
0.1
0.01
3
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Ta= 125°C
2
Fig.3 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
1000
1
1000
Ta= 25°C
10
1
0.01
10
Ta= 75°C
DRAIN-CURRENT :ID[A]
0.1
6
VGS= 10V
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
VGS= 4.0V
Pulsed
Ta= 25°C
Ta= - 25°
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
VGS= 4.0V
VGS= 4.5V
VGS= 10V
Ta= 75°C
0.1
Fig.2 Typical Output Characteristics( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Pulsed
0.1
4
1000
Ta=25°C
Ta= 125°C
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
1000
2
SOURCE CURRENT : Is [A]
0.2
1
0.001
0
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Pulsed
VGS= 3.0V
0
VDS= 10V
Pulsed
Ta=25°C
DRAIN CURRENT : ID[A]
VGS= 10V
VGS= 4.5V
VGS= 4.0V
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
3
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
6/8
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE :VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2011.02 - Rev.A
1000
200
ID= 1.5A
Ta=25°C
SWITCHING TIME : t [ns]
180
Pulsed
160
ID=3.0A
140
120
100
80
60
40
Ta=25°C
td(off)
VDD= -15V
tf
VGS= -10V
RG=10
100
Pulsed
td(on)
10
tr
20
0
1
0
5
10
15
0.01
0.1
10000
100
DRAIN CURRENT : ID (A)
Ta=25°C
Ciss
VGS=0V
1000
100
Crss
6
Ta=25°C
4
VDD= -15V
ID= -3.0A
2
RG=10
Pulsed
0
0
2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
(VGS=10V)
10
PW =100us
1
PW =1ms
DC operation
0.1
PW = 10ms
Ta = 25°C
Mounted on a CERAMIC board
0.01
1
8
Single Pulse : 1Unit
10
0.1
10
Operation in this area is limited by R DS(ON)
Coss
0.01
10
Fig.11 Switching Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
f=1MHz
1
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : VGS [V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
Data Sheet
QS8M11
10
0.1
100
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
0.01
Rth(ch-a) = 100 °C/W
<Mounted on a CERAMIC board>
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2011.02 - Rev.A
Data Sheet
QS8M11
 Measurement circuits
<Tr1(Nch)>
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
tf
ton
Fig.1-1 Switching Time Measurement Circuit
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
<Tr2(Pch)>
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
D.U.T.
50%
10%
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.3-2　Switching Waveforms
Fig.3-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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8/8
2011.02 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R1120A