INTERSIL BUZ42

BUZ42
Semiconductor
Data Sheet
4A, 500V, 2.000 Ohm, N-Channel Power
MOSFET
October 1998
File Number 2417.1
Features
• 4A, 500V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• rDS(ON) = 2.000Ω
(BUZ42 field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
)
switching regulators, switching converters, motor drivers,
/Subject relay drivers, and drivers for high power bipolar switching
• Nanosecond Switching Speeds
transistors
requiring
high
speed
and
low
gate
drive
power.
(4A,
• Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
500V,
• High Input Impedance
2.000
Formerly developmental type TA17415.
• Majority Carrier Device
Ohm, N• Related Literature
Channel Ordering Information
- TB334 “Guidelines for Soldering Surface Mount
PART NUMBER
PACKAGE
BRAND
Power
Components to PC Boards”
BUZ42
TO-220AB
BUZ42
MOSNOTE: When ordering, use the entire part number.
FET)
Symbol
/Author
D
()
/KeyG
words
(Harris
S
Semiconductor, NChannel Packaging
Power
JEDEC TO-220AB
MOSFET,
SOURCE
TODRAIN
GATE
220AB)
/Creator
DRAIN (FLANGE)
()
/DOCIN
FO pdfmark
[ /PageMode
/UseOutlines
/DOCVIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
BUZ42
TC = 25oC, Unless Otherwise Specified
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
BUZ42
500
500
4.0
16
±20
75
300
0.6
-55 to 150
E
55/150/56
UNITS
V
V
A
A
V
W
mJ
W/oC
oC
-
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
500
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
-
20
250
µA
-
100
1000
µA
VGS = 20V, VDS = 0V
-
10
100
nA
rDS(ON)
ID = 2.5A, VGS = 10V (Figure 8)
-
1.6
2.000
Ω
gfs
VDS = 25V, ID = 2.5A (Figure 11)
1.5
2.5
-
S
-
30
45
ns
-
40
60
ns
-
110
140
ns
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
VCC = 30V, ID ≈ 2.5A, VGS = 10V, RGS = 50Ω,
RL = 10Ω. (Figures 16, 17)
td(OFF)
Fall Time
tf
-
50
65
ns
-
1500
2000
pF
COSS
-
110
170
pF
CRSS
-
40
70
Input Capacitance
CISS
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
pF
Thermal Resistance Junction to Case
RθJC
≤ 1.67
oC/W
Thermal Resistance Junction to Ambient
RθJA
≤ 75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
ISD
Pulsed Source to Drain Current
ISDM
Source to Drain Diode Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
TEST CONDITIONS
TC = 25oC
TC = 25oC
TJ = 25oC,
TJ = 25oC,
VR = 100V
MIN
TYP
MAX
-
-
4.0
A
-
-
16
A
ISD = 8A, VGS = 0V
-
1.1
1.5
V
ISD = 4A, dISD/dt = 100A/µs,
-
1200
-
ns
-
6.0
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 25µH, RG = 25Ω, IPEAK = 4.5A. (See Figures 14 and 15).
2
UNITS
BUZ42
Unless Otherwise Specified
1.2
6
1.0
5
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
Typical Performance Curves
0.8
0.6
0.4
VGS ≥ 10V
4
3
2
1
0.2
0
0
0
25
50
75
100
TC , CASE TEMPERATURE (oC)
125
ZθJC, TRANSIENT THERMAL IMPEDANCE
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
1
50
0
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.5
0.2
0.1
0.1
PDM
0.05
0.02
0.01
0
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
102
10
PD = 75W
VGS = 20V
TJ = MAX RATED
5µs
101
10µs
100µs
100
10-1
100
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
1ms
10V
8.0V
7.5V
7.0V
8
6
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
103
VGS = 6.5V
VGS = 6.0V
VGS = 5.5V
4
VGS = 5.0V
2
VGS = 4.5V
10ms
100ms
DC
101
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TC = 25oC
VGS = 4.0V
0
0
20
40
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
80
BUZ42
Typical Performance Curves
Unless Otherwise Specified (Continued)
7
PULSE DURATION = 80µs
VDS = 25V
6
5
4
TJ = 25oC
3
2
1
VGS = 5V
6
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE
ID(ON), ON-STATE DRAIN CURRENT (A)
7
6V
5
4
6.5V
7V
7.5V
8V
9V
10V
20V
3
2
1
PULSE DURATION = 80µs
0
0
5
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 10V, ID = 2.5A
PULSE DURATION = 80µs
5
4
3
2
1
0
-50
0
50
100
0
2
150
VDS = VGS
ID = 1mA
4
3
2
1
0
-50
0
CISS
COSS
CRSS
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4
5
gfs, TRANSCONDUCTANCE (S)
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0
50
100
150
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10-1
10-2
10
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
100
8
5
TJ, JUNCTION TEMPERATURE (oC)
101
4
6
ID, DRAIN CURRENT (A)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
VGS(TH), GATE THRESHOLD VOLTAGE (V)
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
6
0
10
FIGURE 6. TRANSFER CHARACTERISTICS
C, CAPACITANCE (pF)
5.5V
VDS = 25V, TJ = 25oC
PULSE DURATION = 80µs
4
3
2
1
0
0
1
2
5
3
4
ID, DRAIN CURRENT (A)
6
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
7
BUZ42
Unless Otherwise Specified (Continued)
102
15
PULSE DURATION = 80µs
101
TJ = 150oC
TJ = 25oC
100
10-1
0
0.5
1.0
ID = 6.8A
VGS, GATE TO SOURCE VOLTAGE (V)
ISD, SOURCE TO DRAIN CURRENT (A)
Typical Performance Curves
1.5
2.0
VDS = 100V
10
VDS = 400V
5
0
2.5
0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
40
10
20
30
Qg(TOT), TOTAL GATE CHARGE (nC)
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
RG
-
VDD
10%
10%
0
DUT
90%
VGS
VGS
0
FIGURE 16. SWITCHING TIME TEST CIRCUIT
5
10%
50%
50%
PULSE WIDTH
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS