SKM600GAL126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 660 A Tc = 80 °C 461 A 400 A ICnom ICRM SEMITRANS® 3 Trench IGBT Modules SKM600GAL126D VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 800 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 490 A Tc = 80 °C 337 A 400 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • IDC ≤ 500A for TTerminal = 100 °C IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3312 A -40 ... 150 °C Tc = 25 °C 490 A Tc = 80 °C 337 A 400 A Tj Freewheeling diode IF Tj = 150 °C IFnom IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3312 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.70 2.12 V Tj = 125 °C 2.02 2.46 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.75 2.3 mΩ 2.8 3.4 mΩ 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 16 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 28.8 nF f = 1 MHz 1.51 nF f = 1 MHz 1.31 nF 3600 nC 1.9 Ω GAL © by SEMIKRON Rev. 1.0 – 20.07.2015 1 SKM600GAL126D Characteristics Symbol td(on) tr Eon td(off) tf Conditions VCC = 600 V IC = 400 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω Eoff SEMITRANS® 3 Trench IGBT Modules SKM600GAL126D Rth(j-c) Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • IDC ≤ 500A for TTerminal = 100 °C IRRM Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) chiplevel max. Unit 290 ns Tj = 125 °C 60 ns Tj = 125 °C 39 mJ Tj = 125 °C 670 ns Tj = 125 °C 80 ns Tj = 125 °C 64 mJ 0.055 K/W Tj = 25 °C 1.60 1.80 V Tj = 125 °C 1.60 1.80 V Tj = 25 °C 1 1.1 V Tj = 125 °C 0.8 0.9 V Tj = 25 °C 1.50 1.75 mΩ 2.00 2.3 mΩ Tj = 125 °C IF = 400 A Tj = 125 °C di/dtoff = 7600 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF typ. per IGBT Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 125 °C 475 A 96 µC 41 mJ 0.125 K/W Tj = 25 °C 1.60 1.80 V Tj = 125 °C 1.60 1.80 V Tj = 25 °C 1 1.1 V Tj = 125 °C 0.8 0.9 V Tj = 25 °C 1.50 1.75 mΩ Tj = 125 °C 2.00 2.3 mΩ IF = 400 A Tj = 125 °C di/dtoff = 7600 A/µs T = 125 °C j VGE = ±15 V T j = 125 °C VCC = 600 V per Diode 475 A 96 µC 41 mJ 0.125 K/W Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 15 nH TC = 25 °C 0.35 mΩ TC = 125 °C 0.5 mΩ 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GAL 2 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM600GAL126D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 20.07.2015 3 SKM600GAL126D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM600GAL126D SEMITRANS 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 20.07.2015 5