SKM200GB126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 260 A Tc = 80 °C 186 A 150 A ICnom ICRM SEMITRANS® 3 Trench IGBT Modules SKM200GB126D VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 300 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 200 A Tc = 80 °C 140 A 150 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1422 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 150 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C VCC = 600 V IC = 150 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω td(on) tr Eon td(off) tf Eoff Rth(j-c) min. typ. max. Unit Tj = 25 °C 1.71 2.10 V Tj = 125 °C 2.00 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 4.7 6 mΩ 7.3 9 mΩ 5.8 6.5 V 2 mA Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 10.7 nF f = 1 MHz 0.56 nF f = 1 MHz 0.48 nF 1530 nC 5 Tj = 125 °C Ω 260 ns Tj = 125 °C 40 ns Tj = 125 °C 18 mJ Tj = 125 °C 540 ns Tj = 125 °C 110 ns Tj = 125 °C 24 mJ per IGBT 0.13 K/W GB © by SEMIKRON Rev. 1.0 – 20.07.2015 1 SKM200GB126D Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 3 Trench IGBT Modules SKM200GB126D IRRM Qrr Err Rth(j-c) • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 1.60 1.80 V Tj = 125 °C 1.60 1.80 V Tj = 25 °C 1 1.1 V Tj = 125 °C 0.8 0.9 V Tj = 25 °C 4 4.7 mΩ 5.3 6 mΩ Tj = 125 °C IF = 150 A Tj = 125 °C di/dtoff = 5000 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 240 A 42 µC 18 mJ 0.3 K/W Module LCE RCC'+EE' Features chiplevel min. terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 15 nH TC = 25 °C 0.35 mΩ TC = 125 °C 0.5 mΩ 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications* • AC inverter drives • UPS • Electronic welders GB 2 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM200GB126D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 20.07.2015 3 SKM200GB126D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM200GB126D SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 20.07.2015 5