HARRIS HGTG40N6

HGTG40N60B3
S E M I C O N D U C T O R
PRELIMINARY
70A, 600V, UFS Series N-Channel IGBT
May 1995
Features
Package
o
• 70A, 600V at TC = +25 C
JEDEC STYLE TO-247
• Square Switching SOA Capability
E
• Typical Fall Time - 160ns at +150oC
C
G
• Short Circuit Rating
• Low Conduction Loss
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
C
G
PACKAGING AVAILABILITY
PART NUMBER
HGTG40N60B3
PACKAGE
TO-247
E
BRAND
G40N60B3
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage, RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG40N60B3
600
600
UNITS
V
V
70
40
330
±20
±30
160A at 0.8 BVCES
290
2.33
-40 to +150
260
2
10
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TC = +125oC, RGE = 25Ω.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
9-3
File Number
3943
Specifications HGTG40N60B3
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
Collector-Emitter Breakdown Voltage
BVCES
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
ICES
VCE(SAT)
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Latching Current
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(OFF)I
UNITS
600
-
-
V
-
250
A
VCE = BVCES
TJ = +150oC
-
-
7.5
mA
ICE = 40A
VGE = 15V
TJ = +25oC
-
1.4
2.0
V
TJ = +150oC
-
1.5
2.3
V
TJ = +25oC
3.0
5
6.0
V
-
-
±300
nA
160
-
-
A
ICE = 40A, VCE = 0.5 BVCES
-
8.0
-
V
ICE = 40A,
VCE = 0.5 BVCES
VGE = 15V
-
240
320
nC
VGE = 20V
-
350
450
nC
-
50
-
ns
-
40
-
ns
-
350
435
ns
TJ = +150oC
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 45µH
tRI
MAX
-
VGE = ±20V
tD(ON)I
TYP
TJ = +25oC
IGES
QG(ON)
MIN
VCE = BVCES
ICE = 250A,
VCE = VGE
VGEP
On-State Gate Charge
ICE = 250µA, VGE = 0V
VGE(TH)
IL
Gate-Emitter Plateau Voltage
TEST CONDITIONS
TJ = +150oC
ICE = 40A
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
Current Fall Time
tFI
-
160
200
ns
Turn-On Energy
EON
-
1400
-
J
Turn-Off Energy (Note 1)
EOFF
-
3300
-
J
Thermal Resistance
RθJC
-
-
0.43
oC/W
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
9-4
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTG40N60B3
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
200
ICE, COLLECTOR-EMITTER CURRENT (A)
180
160
140
o
TC = +150 C
120
100
TC =
80
60
+25oC
TC = -40oC
40
20
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
200
180
0
120
9V
100
80
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
8.0V
40
7.5V
20
7.0V
0
12
DIE LIMIT
VGE = 15V
70
PACKAGE LIMIT
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE
2
2.5
3
3.5
4
4.5
5
CISS
8
6
4
COSS
2
CRSS
15
20
25
100
TC = +150oC
50
0
1
2
3
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IG(REF) = 4.06mA, RL = 7.5Ω, TC = +25oC
600
450
BVCE = 400V
5
150
BVCE = 200V
0
50
100
150
200
FIGURE 6. GATE CHARGE WAVEFORMS
9-5
20
10
300
QG , GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
4
15
BVCE = 600V
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC = +25oC
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
VCE , COLLECTOR - EMITTER VOLTAGE (V)
12
10
TC = -40oC
0
14
5
150
(oC)
FREQUENCY = 1MHz
10
200
150
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
0
1.5
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VGE = 15V
80
60
1
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
90
0.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
100
ICE, DC COLLECTOR CURRENT (A)
8.5V
60
FIGURE 1. TRANSFER CHARACTERISTICS
C, CAPACITANCE (nF)
9.5V
140
0
0
0
10V
12V
VGE = 15V
160
0
250
VGE, GATE-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
Typical Performance Curves
HGTG40N60B3
Typical Performance Curves
TJ = +150oC, RG = 3Ω, L = 100µH
70
50
30
20
10
10
20
30
40
50
60
70
80
90
TJ = +150oC, RG = 3Ω, L = 100µH
400
tD(OFF)I , TURN-OFF DELAY TIME (ns)
100
tD(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
350
300
VCE(PK) = 480V, VGE = 15V
250
200
10
100
20
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
500
tFI , FALL TIME (ns)
tRI , TURN-ON RISE TIME (ns)
TJ = +150oC, RG = 3Ω, L = 100µH
1000
70
50
VCE(PK) = 480V, VGE = 15V
30
20
300
200
100
VCE(PK) = 480V, VGE = 15V
50
30
20
10
10
10
20
30
40
50
60
70
80
90
100
20
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
40
60
80
ICE , COLLECTOR-EMITTER CURRENT (A)
100
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
TJ = +150oC, RG = 3Ω, L = 100µH
TJ = +150oC, RG = 3Ω, L = 100µH
10
EOFF , TURN-OFF ENERGY LOSS (mJ)
6
EON , TURN-ON ENERGY LOSS (mJ)
100
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
TJ = +150oC, RG = 3Ω, L = 100µH
100
30
40
50
60
70
80
90
ICE , COLLECTOR-EMITTER CURRENT (A)
5
4
VCE(PK) = 480V, VGE = 15V
3
2
1
8
VCE(PK) = 480V, VGE = 15V
6
4
2
0
10
20
30
40
50
60
70
80
90
10
100
20
30
40
50
60
70
80
90
100
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
9-6
HGTG40N60B3
Typical Performance Curves
ICE, COLLECTOR-EMITTER CURRENT (A)
TJ = +150oC, TC = +75oC, VGE = +15V, RG = 3Ω, L = 100µH
200
fMAX , OPERATING FREQUENCY (kHz)
(Continued)
100
50
20
10
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
5
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.43oC/W
2
1
10
20
30
50
70
TC = +150oC, VGE = 15V, RG = 3Ω, L = 45µH
200
160
120
80
40
0
0
100
100
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
300
400
500
600
FIGURE 14. SWITCHING SAFE OPERATING AREA
100
0.5
RESPONSE (oC/W)
ZθJC , NORMALIZED THERMAL
200
VCE, COLLECTOR-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
0.2
10-1
0.1
PD
0.05
t1
t2
NOTES:
DUTY FACTOR, D = t1 /t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveforms
90%
L = 100µH
10%
VGE
RHRP3060
EOFF
EON
VCE
RG = 3Ω
90%
+
-
ICE
VDD = 480V
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
10%
tD(OFF)I
tFI
tRI
tD(ON)I
FIGURE 17. SWITCHING TEST WAVEFORMS
9-7
HGTG40N60B3
Operating Frequency Information
Handling Precautions for IGBT’s
Operating frequency information for a typical device (Figure
13) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used
in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.
IGBT’s can be handled safely if the following basic precautions are taken:
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 17.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †”ECCOSORBD LD26” or equivalent.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX .
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 13) and the
conduction losses (PC) are approximated by PC = (VCE x
ICE)/2.
5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation of EOFF;
i.e.the collector current equals zero (ICE = 0).
6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
† Trademark Emerson and Cumming, Inc.
9-8