SO T4 57 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -5.7 A - 41 46 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package PMN42XPEA Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN42XPEA B9 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -5.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.9 A - -16 A [2] - 500 mW [1] - 1310 mW - 8330 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET Symbol Parameter Tj Conditions Min Max Unit junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.4 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] [3] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measured between all pins. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMN42XPEA Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 21 March 2014 25 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-004347 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] PMN42XPEA Product data sheet Min Typ Max Unit [1] - 216 250 K/W [2] - 83 95 K/W [2] - 51 60 K/W - 10 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-004359 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-004360 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.25 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tamb = 150 °C - - -10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 41 46 mΩ VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 56 64 mΩ VDS = -10 V; ID = -4 A; Tj = 25 °C - 12.5 - S IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -4 A; VGS = -4.5 V; - 11.5 17.3 nC QGS gate-source charge Tj = 25 °C - 2.7 - nC QGD gate-drain charge - 2.4 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 1410 - pF Coss output capacitance Tj = 25 °C - 207 - pF Crss reverse transfer capacitance - 148 - pF td(on) turn-on delay time VDS = -10 V; ID = -4 A; VGS = -4.5 V; - 17 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 27 - ns td(off) turn-off delay time - 33 - ns tf fall time - 27 - ns - -0.7 -1.2 V Source-drain diode VSD source-drain voltage PMN42XPEA Product data sheet IS = -1.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-004348 -16 -8 V ID (A) -3 V VGS = -2.5 V -4.5 V 017aaa129 - 10- 3 ID (A) -12 - 10- 4 -2.2 V (1) -8 (2) (3) -2 V - 10- 5 -4 0 Fig. 6. -1.8 V 0 -1 -2 -3 - 10- 6 0.0 -4 VDS (V) - 0.5 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-004349 150 -1.8 V RDSon (mΩ) -2 V -2.2 V - 1.0 aaa-004350 RDSon (mΩ) 100 100 Tj = 150 °C -3 V 50 50 -4.5 V Tj = 25 °C -8 V 0 0 -4 -8 -12 ID (A) 0 -16 Tj = 25 °C Fig. 8. - 1.5 Sub-threshold drain current as a function of gate-source voltage 150 VGS = -2.5 V VGS (V) Product data sheet -2 -4 VGS (V) -6 ID = -4 A Drain-source on-state resistance as a function of drain current; typical values PMN42XPEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-004351 -16 ID (A) aaa-004352 1.50 a Tj = 25 °C -12 Tj = 150 °C 1.25 -8 1.00 -4 0 Tj = 150 °C 0 0.75 Tj = 25 °C -1 -2 -3 VGS (V) 0.50 -60 -4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values VGS(th) (V) 120 Ciss 103 typ -0.5 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS Product data sheet -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN42XPEA Coss Crss 102 0 180 C (pF) min 0.0 -60 Tj (°C) aaa-004354 104 max -1.0 60 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-004353 -1.5 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET aaa-004356 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 4 8 QG (nC) Fig. 15. Gate charge waveform definitions 12 ID = -4 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-004357 -5 IS (A) -4 -3 -2 Tj = 150 °C -1 0 0.0 -0.2 -0.4 Tj = 25 °C -0.6 -0.8 -1.0 VSD (V) VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm 0.26 0.10 04-11-08 Fig. 18. Package outline TSOP6 (SOT457) PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for TSOP6 (SOT457) PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN42XPEA v.1 20140321 Product data sheet - - PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 15 PMN42XPEA NXP Semiconductors 20 V, P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 March 2014 PMN42XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 21 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 15