SO T3 23 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -8 - 8 V - - 350 mA - 1 1.4 Ω drain current ID VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 4.5 V; ID = 350 mA; Tj = 25 °C Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT323 (SC-70) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008NBKW SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] NX3008NBKW AA% [1] % = placeholder for manufacturing site code NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = 4.5 V; Tamb = 25 °C - 350 mA VGS = 4.5 V; Tamb = 100 °C [1] - 230 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] Tamb = 25 °C - 1.4 A [2] - 260 mW [1] - 310 mW - 830 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - 300 mA HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 001aao246 10 lD (A) 1 (1) 10-1 (2) (3) (4) 10-2 10-1 (5) 1 10 VDS (V) 102 IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 °C (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa028 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0 10 0.2 0.05 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa029 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 0.9 1.1 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - 0.2 1 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - 0.2 1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - 10 - nA RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - 10 - nA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - 1 - nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - 1 - nA VGS = 4.5 V; ID = 350 mA; Tj = 25 °C - 1 1.4 Ω VGS = 4.5 V; ID = 350 mA; Tj = 150 °C - 1.8 2.5 Ω VGS = 2.5 V; ID = 200 mA; Tj = 25 °C - 1.4 2.1 Ω VGS = 1.8 V; ID = 10 mA; Tj = 25 °C - 2 2.8 Ω VDS = 10 V; ID = 350 mA; Tj = 25 °C - 310 - mS VDS = 15 V; ID = 350 mA; VGS = 4.5 V; Tj = 25 °C - 0.52 0.68 nC - 0.17 - nC - 0.08 - nC - 34 50 pF - 6.5 - pF - 2.2 - pF - 15 30 ns - 11 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 69 138 ns tf fall time - 19 - ns 0.47 0.85 1.2 V VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage NX3008NBKW Product data sheet IS = 350 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 001aao267 0.4 4.5 V ID (A) 2.5 V 001aao268 10-3 ID (A) 2V 0.3 (2) (1) (3) 10-4 1.75 V 0.2 10-5 1.5 V 0.1 VGS = 1.25 V 0.0 0 1 2 3 VDS (V) 4 10-6 0.0 Tj = 25 °C 0.5 1.0 VGS (V) 1.5 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 001aao269 6 RDS (on) (Ω) Sub-threshold drain current as a function of gate-source voltage 001aao270 6 RDS (on) (Ω) (1) (2) (3) 4 4 (4) 2 2 (1) (5) (2) (6) 0 0.0 0.1 0.2 0.3 ID (A) 0 0.4 0 1 Tj = 25 °C ID = 350 mA (1) VGS = 1.5 V (1) Tj = 150 °C (2) VGS = 1.75 V (2) Tj = 25 °C 2 3 4 VGS (V) 5 (3) VGS = 2.0 V (4) VGS = 2.25 V (5) VGS = 2.5 V (6) VGS = 4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values NX3008NBKW Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 001aao272 2.0 001aao271 0.4 a 1.5 ID (A) (1) (2) 0.3 1.0 0.2 0.5 0.1 0.0 -60 0.0 0 1 2 VGS (V) 0 60 120 Tj (˚C) 180 3 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao273 1.5 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 001aao274 102 (1) C (pF) (1) 1.0 (2) 10 0.5 (2) (3) (3) 0.0 -60 0 60 120 Tj (˚C) 180 1 10-1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1)Ciss (2) typical values (2)Coss (3) minimum values (3)Crss Fig 12. Gate-source threshold voltage as a function of junction temperature NX3008NBKW Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 001aao275 5 VGS (V) VDS 4 ID 3 VGS(pl) VGS(th) 2 VGS QGS1 1 QGS2 QGS 0 0.0 0.2 0.4 QG (nC) QGD QG(tot) 003aaa508 0.6 ID = 350 mA; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao276 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0.0 0.0 0.4 0.6 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT323 (SC-70) NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint for SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 20. Wave soldering footprint for SOT323 (SC-70) NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008NBKW v.1 20110802 Product data sheet - - NX3008NBKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET 12. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved. 14 of 16 NX3008NBKW NXP Semiconductors 30 V, 350 mA N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Quality information . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 August 2011 Document identifier: NX3008NBKW