Si4500BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch RT1 6.0545 6.2738 N/A 8.2801 10.3324 RT2 17.2439 13.3174 N/A 946.9524 m 2.2401 RT3 24.6116 26.7131 N/A 2.2557 3.2629 RT4 46.8942 48.0832 N/A 10.4672 10.1175 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CT1 758.3167 u 367.4853 u N/A 8.0720 m 6.5828 m 754.7546 u CT2 16.7936 m 10.8942 m N/A 1.4542 m CT3 161.2268 m 96.9052 m N/A 1.7482 m 1.0484 m CT4 1.4835 1.5761 N/A 119.4180 m 116.6314 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74676 Revision 08-May-07 www.vishay.com 1 Si4500BDY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch RF1 7.5642 6.8208 N/A 3.0698 Foot Pch 6.5004 RF2 18.4895 15.2713 N/A 8.3084 6.5976 RF3 26.0950 27.3218 N/A 8.6396 4.5412 RF4 42.5245 44.9440 N/A 1.9890 8.3279 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CF1 947.4298 u 431.7272 u N/A 639.6264 u 409.9855 u CF2 15.0457 m 9.2834 m N/A 5.1273 m 6.5231 m CF3 121.8680 m 81.4055 m N/A 79.2674 m 1.9847 m CF4 1.4316 1.5389 N/A 914.3533 m 140.8816 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74676 Revision 08-May-07 Si4500BDY_RC Vishay Siliconix Document Number: 74676 Revision 08-May-07 www.vishay.com 3 Si4500BDY_RC Vishay Siliconix www.vishay.com 4 Document Number: 74676 Revision 08-May-07