SUB65P06-20 Datasheet

SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) ()
ID (A)
–60
0.020
–65a
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
D S
Top View
Top View
D
SUB65P06-20
SUP65P06-20
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
VGS
"20
V
Gate-Source Voltage
–65a
TC = 25_C
Continuous Drain Current
(TJ = 175_C)
ID
TC = 125_C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
–200
IAR
–60
EAR
180
A
mJ
250d
TC = 25_C (TO-220AB and TO-263)
Power Dissipation
–39
IDM
PD
TA = 125_C (TO-263)c
3.7
W
TJ, Tstg
–55 to 175
_C
Symbol
Limit
Unit
PCB Mount (TO-263)c
RthJA
40
Free Air (TO-220AB)
RthJA
62.5
RthJC
0.6
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
_C/W
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
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Document Number: 70289
S-05111—Rev. C, 10-Dec-01
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SUP/SUB65P06-20
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = –250 A
–60
VGS(th)
VDS = VGS, ID = –250 A
–2.0
–3.0
–4.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = –60 V, VGS = 0 V
–1
VDS = –60 V, VGS = 0 V, TJ = 125_C
–50
VDS = –60 V, VGS = 0 V, TJ = 175_C
–150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = –5 V, VGS = –10 V
–120
rDS(on)
VGS = –10 V, ID = –30 A, TJ = 125_C
0.033
VGS = –10 V, ID = –30 A, TJ = 175_C
0.042
VGS = –10 V, ID = –30 A
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
VDS = –15 V, ID = –30 A
V
nA
A
0.017
0.020
25
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Timec
Fall Timec
4500
VGS = 0 V, VDS = –25 V, f = 1 MHz
870
pF
350
85
VDS = –30 V, VGS = –10 V, ID = –65 A
120
24
nC
Qgd
22
td(on)
15
40
tr
40
80
65
120
30
60
td(off)
VDD = –30 V, RL = 0.47 ID ] –65 A, VGEN = –10 V, RG = 2.5 tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
–65
Pulsed Current
ISM
–200
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = –65 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = –65 A, di/dt = 100 A/s
–1.1
–1.4
V
70
120
ns
7
9
A
0.245
0.54
C
Notes:
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
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Document Number: 70289
S-05111—Rev. C, 10-Dec-01
SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
200
VGS = 10, 9, 8 V
7V
TC = –55_C
160
120
I D – Drain Current (A)
I D – Drain Current (A)
160
6V
80
5V
40
25_C
125_C
120
80
40
4V
0
0
0
2
4
6
8
10
0
2
VDS – Drain-to-Source Voltage (V)
Transconductance
8
10
On-Resistance vs. Drain Current
0.030
0.025
r DS(on)– On-Resistance ( )
TC = –55_C
80
25_C
60
125_C
40
20
0
0.020
VGS = 10 V
0.015
VGS = 20 V
0.010
0.005
0.000
0
20
40
60
80
0
100
20
40
VGS – Gate-to-Source Voltage (V)
60
80
100
ID – Drain Current (A)
Capacitance
Gate Charge
6000
20
5000
Ciss
V GS – Gate-to-Source Voltage (V)
C – Capacitance (pF)
6
VGS – Gate-to-Source Voltage (V)
100
g fs – Transconductance (S)
4
4000
3000
2000
Coss
Crss
1000
0
VDS = 30 V
ID = 65 A
16
12
8
4
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
60
0
25
50
75
100
125
150
175
Qg – Total Gate Charge (nC)
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SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S – Source Current (A)
r DS(on)– On-Resistance ( )
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TJ = 150_C
TJ = 25_C
10
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
TJ – Junction Temperature (_C)
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
80
10 s
Limited by rDS(on)
100
100 s
I D – Drain Current (A)
I D – Drain Current (A)
60
40
20
0
1 ms
10
10 ms
100 ms
dc
1
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
TC – Case Temperature (_C)
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 70289
S-05111—Rev. C, 10-Dec-01
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Document Number: 91000
Revision: 18-Jul-08
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