TEMIC SUP65P06

SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
rDS(on) ()
ID (A)
–60
0.020
–65a
! ! "
#
"
#
#
Absolute Maximum Ratings (TC = 25C Unless Otherwise Noted)
Parameter
Gate-Source Voltage
TC = 25C
Continuous Drain Current
(TJ = 175C)
TC = 125C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energyb
L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
Power Dissipation
TA = 125C (TO-263)c
Symbol
Limit
Unit
VGS
20
V
–65a
ID
–39
IDM
–200
IAR
–60
EAR
180
A
mJ
187d
PD
3.7
W
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
PCB Mount (TO-263)c
RthJA
40
Free Air (TO-220AB)
RthJA
62.5
RthJC
0.8
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Junction-to-Ambient
Junction to Ambient
Junction-to-Case
C/W
Notes:
a. Package limited.
b. Duty cycle 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.
A SPICE Model data sheet is available for this product (FaxBack document #70543).
Siliconix
P-39628—Rev. A, 28-Dec-94
1
SUP/SUB65P06-20
Specifications (TJ = 25C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = –250 mA
–60
VGS(th)
VDS = VGS, ID = –250 mA
–2.0
–3.0
–4.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = –60 V, VGS = 0 V
–1
VDS = –60 V, VGS = 0 V, TJ = 125C
–50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
V
VDS = –60 V, VGS = 0 V, TJ = 175C
VDS = –5 V, VGS = –10 V
Drain-Source On-State
Forward Transconductance b
rDS(on)
gfs
A
0.017
0.020
VGS = –10 V, ID = –30 A, TJ = 125C
0.033
VGS = –10 V, ID = –30 A, TJ = 175C
0.042
VDS = –15 V, ID = –30 A
mA
A
–150
–120
VGS = –10 V, ID = –30 A
Resistanceb
nA
25
W
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
350
Total Gate Chargec
Qg
85
Gate-Source
Chargec
Qgs
4500
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –30 V, VGS = –10 V, ID = –65 A
Qgd
22
Turn-On Delay Timec
td(on)
15
Rise
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDD = –30 V,, RL = 0.47 W
ID ] –65 A, VGEN = –10 V, RG = 2.5 W
tf
120
nC
24
Gate-Drain Chargec
Timec
pF
870
40
40
80
65
120
30
60
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)a
Continuous Current
Is
–65
Pulsed Current
ISM
–200
Forward Voltageb
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = –65 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = –65 A, di/dt = 100 A/ms
A
–1.1
–1.4
V
70
120
ns
7
9
A
0.245
0.54
mC
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
2
Siliconix
P-39628—Rev. A, 28-Dec-94
SUP/SUB65P06-20
Typical Characteristics (25C Unless Noted)
Output Characteristics
Transfer Characteristics
200
200
VGS = 10, 9, 8 V
7V
TC = –55C
160
120
I D – Drain Current (A)
I D – Drain Current (A)
160
6V
80
5V
40
25C
125C
120
80
40
4V
0
0
0
2
4
6
8
10
0
2
VDS – Drain-to-Source Voltage (V)
Transconductance
8
10
On-Resistance vs. Drain Current
0.030
0.025
rDS(on) – On-Resistance ( )
TC = –55C
80
g fs – Transconductance (S)
6
VGS – Gate-to-Source Voltage (V)
100
25C
60
125C
40
20
0
0.020
VGS = 10 V
0.015
VGS = 20 V
0.010
0.005
0
0
20
40
60
80
100
0
20
VGS – Gate-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Ciss
4000
3000
2000
Coss
Crss
60
80
100
Gate Charge
20
5000
1000
40
ID – Drain Current (A)
Capacitance
6000
C – Capacitance (pF)
4
0
VDS = 30 V
ID = 65 A
16
12
8
4
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Siliconix
P-39628—Rev. A, 28-Dec-94
60
0
25
50
75
100
125
150
175
Qg – Total Gate Charge (nC)
3
SUP/SUB65P06-20
Typical Characteristics (25C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 30 A
I S – Source Current (A)
2.0
rDS(on) – On-Resistance ( W )
(Normalized)
Source-Drain Diode Forward Voltage
100
1.5
1.0
TJ = 150C
TJ = 25C
10
0.5
0
–50 –25
1
0
25
50
75
100 125 150 175
0.3
TJ – Junction Temperature (C)
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Thermal Ratings
Maximum Avalanche and Drain Current
vs. Case Temperature
80
Safe Operating Area
500
I D – Drain Current (A)
I D – Drain Current (A)
60
40
20
0
0
25
50
75
100
125
150
175
1 ms
10 ms
100 ms
dc
1
TC = 25C
Single Pulse
0.1
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
100 ms
10
TC – Case Temperature (C)
1
10 ms
Limited by rDS(on)
100
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
4
Siliconix
P-39628—Rev. A, 28-Dec-94