SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) () ID (A) –60 0.020 –65a ! ! " # " # # Absolute Maximum Ratings (TC = 25C Unless Otherwise Noted) Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C) TC = 125C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25C (TO-220AB and TO-263) Power Dissipation TA = 125C (TO-263)c Symbol Limit Unit VGS 20 V –65a ID –39 IDM –200 IAR –60 EAR 180 A mJ 187d PD 3.7 W TJ, Tstg –55 to 175 C Symbol Limit Unit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.8 Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter Junction-to-Ambient Junction to Ambient Junction-to-Case C/W Notes: a. Package limited. b. Duty cycle 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). Siliconix P-39628—Rev. A, 28-Dec-94 1 SUP/SUB65P06-20 Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –60 VGS(th) VDS = VGS, ID = –250 mA –2.0 –3.0 –4.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –60 V, VGS = 0 V –1 VDS = –60 V, VGS = 0 V, TJ = 125C –50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) V VDS = –60 V, VGS = 0 V, TJ = 175C VDS = –5 V, VGS = –10 V Drain-Source On-State Forward Transconductance b rDS(on) gfs A 0.017 0.020 VGS = –10 V, ID = –30 A, TJ = 125C 0.033 VGS = –10 V, ID = –30 A, TJ = 175C 0.042 VDS = –15 V, ID = –30 A mA A –150 –120 VGS = –10 V, ID = –30 A Resistanceb nA 25 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 350 Total Gate Chargec Qg 85 Gate-Source Chargec Qgs 4500 VGS = 0 V, VDS = –25 V, f = 1 MHz VDS = –30 V, VGS = –10 V, ID = –65 A Qgd 22 Turn-On Delay Timec td(on) 15 Rise Turn-Off Delay Timec Fall Timec tr td(off) VDD = –30 V,, RL = 0.47 W ID ] –65 A, VGEN = –10 V, RG = 2.5 W tf 120 nC 24 Gate-Drain Chargec Timec pF 870 40 40 80 65 120 30 60 ns Source-Drain Diode Ratings and Characteristics (TC = 25C)a Continuous Current Is –65 Pulsed Current ISM –200 Forward Voltageb VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = –65 A, VGS = 0 V trr IRM(REC) Qrr IF = –65 A, di/dt = 100 A/ms A –1.1 –1.4 V 70 120 ns 7 9 A 0.245 0.54 mC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2 Siliconix P-39628—Rev. A, 28-Dec-94 SUP/SUB65P06-20 Typical Characteristics (25C Unless Noted) Output Characteristics Transfer Characteristics 200 200 VGS = 10, 9, 8 V 7V TC = –55C 160 120 I D – Drain Current (A) I D – Drain Current (A) 160 6V 80 5V 40 25C 125C 120 80 40 4V 0 0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) Transconductance 8 10 On-Resistance vs. Drain Current 0.030 0.025 rDS(on) – On-Resistance ( ) TC = –55C 80 g fs – Transconductance (S) 6 VGS – Gate-to-Source Voltage (V) 100 25C 60 125C 40 20 0 0.020 VGS = 10 V 0.015 VGS = 20 V 0.010 0.005 0 0 20 40 60 80 100 0 20 VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Ciss 4000 3000 2000 Coss Crss 60 80 100 Gate Charge 20 5000 1000 40 ID – Drain Current (A) Capacitance 6000 C – Capacitance (pF) 4 0 VDS = 30 V ID = 65 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Siliconix P-39628—Rev. A, 28-Dec-94 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) 3 SUP/SUB65P06-20 Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A I S – Source Current (A) 2.0 rDS(on) – On-Resistance ( W ) (Normalized) Source-Drain Diode Forward Voltage 100 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 –25 1 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Avalanche and Drain Current vs. Case Temperature 80 Safe Operating Area 500 I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 0 25 50 75 100 125 150 175 1 ms 10 ms 100 ms dc 1 TC = 25C Single Pulse 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 100 ms 10 TC – Case Temperature (C) 1 10 ms Limited by rDS(on) 100 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) 4 Siliconix P-39628—Rev. A, 28-Dec-94