SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 4.5 V 85 0.0034 @ VGS = 2.5 V 85 0.0038 @ VGS = 1.8 V 85 V(BR)DSS (V) 20 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View Ordering Information: SUB85N02-03—E3 (Lead Free) G D S Top View S Ordering Information: SUP85N02-03—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 TC = 25_C Continuous Drain Current (TJ = 175_C)a TC = 100_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power L = 0.1 mH Dissipationa TC = 25_C Operating Junction and Storage Temperature Range ID Unit V 85 85 IDM 240 IAR 30 EAR 45 A mJ PD 250 W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W 0.6 Notes: a. See SOA curve for voltage derating. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71421 S-32619—Rev. B, 29-Dec-03 www.vishay.com 1 SUP/SUB85N02-03 Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 2 mA 20 VGS(th) VDS = VGS, IDS = 2 mA 0.45 IGSS VDS = 0 V, VGS = "8 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 250 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 120 VGS = 4.5 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) 0.0025 VGS = 4.5 V, ID = 30 A, TJ = 175_C 0.005 VDS = 5 V, ID = 30 A mA 0.003 0.0042 VGS = 1.8 V, ID = 30 A gfs nA A VGS = 4.5 V, ID = 30 A, TJ = 125_C VGS = 2.5 V, ID = 30 A Forward Transconductancea V 0.0027 0.0034 0.003 0.0038 30 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 21250 VGS = 0 V, VDS = 20 V, f = 1 MHz 2350 pF 1520 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 20 30 tr VDD = 10 V, RL = 0.12 W 200 300 td(off) ID ] 85 A, VGEN = 4.5 V, Rg = 2.5 W 450 670 320 480 Rise Timec Turn-Off Delay Timec Fall Timec 140 VDS = 10 V,, VGS = 4.5 V,, ID = 85 A 200 18 nC 24 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Pulsed Current ISM Forward Voltagea VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 75 150 ns Reverse Recovery Time 240 A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71421 S-32619—Rev. B, 29-Dec-03 SUP/SUB85N02-03 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 TC = −55_C VGS = 4.5 thru 2 V 25_C 200 I D − Drain Current (A) I D − Drain Current (A) 200 150 1.5 V 100 50 125_C 150 100 50 1, 0.5 V 0 0 2 4 6 8 0 0.0 10 VDS − Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 500 0.005 TC = −55_C r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) 400 25_C 300 125_C 200 100 0 0.004 VGS = 1.8 V 0.003 VGS = 4.5 V 0.002 VGS = 2.5 V 0.001 0.000 0 20 40 60 80 100 120 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 18000 12000 6000 Coss Crss 0 0 100 120 Gate Charge 8 Ciss 24000 80 ID − Drain Current (A) Capacitance 30000 60 VDS = 10 V ID = 30 A 6 4 2 0 4 8 12 16 VDS − Drain-to-Source Voltage (V) Document Number: 71421 S-32619—Rev. B, 29-Dec-03 20 0 50 100 150 200 250 Qg − Total Gate Charge (nC) www.vishay.com 3 SUP/SUB85N02-03 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) r DS(on) − On-Resistance ( W) (Normalized) 1.5 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 4.5 V ID = 30 A I S − Source Current (A) 1.8 1.2 0.9 0.6 TJ = 150_C TJ = 25_C 10 0.3 0.0 −50 −25 0 25 50 75 100 125 150 1 175 0 TJ − Junction Temperature (_C) 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 30 0.020 r DS(on) − On-Resistance ( W ) ID = 2 mA V(BR)DSS (V) 28 26 24 22 −50 −25 0 25 50 75 100 TJ − Junction Temperature (_C) www.vishay.com 4 125 150 0.016 ID = 30 A 0.012 0.008 0.004 0.000 0.0 1.0 2.0 3.0 4.0 5.0 VGS − Gate-to-Source Voltage (V) Document Number: 71421 S-32619—Rev. B, 29-Dec-03 SUP/SUB85N02-03 Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 100 Limited by rDS(on) 80 10 ms I D − Drain Current (A) I D − Drain Current (A) 100 60 40 1 ms 10 10 ms 100 ms dc 1 20 0 100 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 100 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Document Number: 71421 S-32619—Rev. B, 29-Dec-03 www.vishay.com 5