SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 70 0.014 @ VGS = 4.5 V 58 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N04-10 Top View N-Channel MOSFET SUP70N04-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 100_C Pulsed Drain Current V 70 ID 47 IDM Avalanche Current Unit A 140 IAR 60 Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25_C PD 107b W TJ, Tstg –55 to 175 _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Symbol PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Free Air (TO-220) RthJA RthJC Typical Maximum 35 40 45 50 1.2 1.4 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface mounted on 1” FR4 board. Document Number: 70783 S-05110—Rev. D, 10-Dec-01 www.vishay.com 2-1 SUP/SUB70N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) gfs VDS = 5 V, VGS = 10 V 3 70 VGS = 10 V, ID = 30 A 0.008 0.010 0.014 0.017 VGS = 10 V, ID = 30 A, TJ = 175_C 0.0175 0.022 VGS = 4.5 V, ID = 20 A 0.011 0.014 VGS = 4.5 V, ID = 20 A, TJ = 125_C 0.019 0.024 VGS = 4.5 V, ID = 20 A, TJ = 175_C 0.024 0.031 20 nA mA m A VGS = 10 V, ID = 30 A, TJ = 125_C VDS = 15 V, ID = 30 A V 57 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 160 Total Gate Chargec Qg 50 Gate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 9 Turn-On Delay Timec td(on) 14 30 tr VDD = 15 V, RL = 0.2 W 12 30 td(off) ID ] 70 A, VGEN = 10 V, RG = 2.5 W 58 100 30 60 Rise Timec Turn-Off Delay Timec Fall Timec 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 70 A tf 600 pF 100 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 70 Pulsed Current ISM 140 Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.0 1.5 V trr IF = 70 A, di/dt = 100 A/ms 50 100 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70783 S-05110—Rev. D, 10-Dec-01 SUP/SUB70N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 150 150 TC = –55_C VGS = 10 thru 6 V 5V 120 I D – Drain Current (A) I D – Drain Current (A) 120 90 4V 60 30 25_C 125_C 90 60 30 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.030 TC = –55_C g fs – Transconductance (S) r DS(on) – On-Resistance ( Ω ) 25_C 80 125_C 60 40 20 0 0.024 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 0.000 0 20 40 60 80 100 120 0 20 40 VGS – Gate-to-Source Voltage (V) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 10 V GS – Gate-to-Source Voltage (V) 4000 Ciss 3200 C – Capacitance (pF) 60 2400 1600 Coss 800 Crss 0 VGS = 15 V ID = 70 A 8 6 4 2 0 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 70783 S-05110—Rev. D, 10-Dec-01 40 0 10 20 30 40 50 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB70N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.0 0.2 TJ – Junction Temperature (_C) 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 200 80 10 ms 100 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 100 ms 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 1 0.1 0 25 50 75 100 125 150 175 0.1 TA – Ambient Temperature (_C) 1 10 VDS – Drain-to-Source Voltage (V) 50 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70783 S-05110—Rev. D, 10-Dec-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1