VISHAY SUP75P05-08

SUP/SUB75P05-08
New Product
Vishay Siliconix
P-Channel 55-V (D-S), 175C MOSFET
V(BR)DSS (V)
rDS(on) ()
ID (A)
–55
0.008
–75a
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
D S
Top View
Top View
D
SUB75P05-08
SUP75P05-08
P-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–55
Gate-Source Voltage
VGS
20
ID
TC = 150C
–47
A
Pulsed Drain Current
IDM
–240
Avalanche Current
IAR
–75
EAR
280
Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
TA = 125C (TO-263)c
Operating Junction and Storage Temperature Range
V
–75a
TC = 25C
Continuous Drain Current
(TJ = 175C)
Unit
mJ
250d
PD
TJ, Tstg
W
3.7
–55 to 175
C
Parameter
Symbol
Limit
PCB Mount (TO-263)c
RthJA
40
Free Air (TO-220AB)
RthJA
62.5
RthJC
0.6
Junction-to-Ambient
Junction-to-Case
Unit
C/W
Notes:
a. Package limited.
b. Duty cycle 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com FaxBack 408-970-5600
2-1
SUP/SUB75P05-08
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = –250 mA
–55
VGS(th)
VDS = VGS, ID = –250 mA
–1
–2
–3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = –44 V, VGS = 0 V
–1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = –44 V, VGS = 0 V, TJ = 125C
–50
On-State Drain Currenta
ID(on)
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
"100
VDS = –44 V, VGS = 0 V, TJ = 175C
a
D i S
Drain-Source
On-State
O S
Resistance
R i
Forward
Transconductancea
rDS(on)
gfs
VDS = –5 V, VGS = –10 V
mA
A
–700
–120
A
VGS = –10 V, ID = –30 A
0.008
VGS = –4.5 V, ID = –20 A
0.013
VGS = –10 V, ID = –30 A, TJ = 125C
0.014
VGS = –10 V, ID = –30 A, TJ = 175C
0.016
VDS = –15 V, ID = –30 A
nA
75
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
8500
VGS = 0 V,
V VDS = –25
25 V
V, f = 1 MHz
MH
pF
F
1220
915
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
13
20
tr
VDD = –30 V,, RL = 0.47 W
140
225
td(off)
ID ] –75 A, VGEN = –10 V, RG = 2.5 W
115
185
175
300
Rise Timec
Turn-Off Delay Timec
Fall Timec
140
VDS = –30
V, VGS = –10
30 V
10 V,
V ID = –75
75 A
225
nC
C
30
30
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
Is
–75
Pulsed Current
ISM
–240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = –75 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = –75
75 A,
A di/dt
di/d = 100 A/ms
A/
–1.1
–1.3
V
60
120
ns
2.2
3.5
A
0.176
0.21
mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
SUP/SUB75P05-08
New Product
Vishay Siliconix
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 thru 7 V
TC = –55C
6V
200
25C
160
I D – Drain Current (A)
I D – Drain Current (A)
5V
150
100
4V
50
120
125C
80
40
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
2
Transconductance
4
5
6
On-Resistance vs. Drain Current
0.06
TC = –55C
25C
0.05
r DS(on)– On-Resistance ( )
90
125C
60
30
0
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0
0
20
40
60
80
100
0
20
40
ID – Drain Current (A)
60
80
100
120
250
300
ID – Drain Current (A)
Capacitance
Gate Charge
20
12000
V GS – Gate-to-Source Voltage (V)
10000
Ciss
C – Capacitance (pF)
3
VGS – Gate-to-Source Voltage (V)
120
g fs – Transconductance (S)
1
8000
6000
4000
Coss
2000
VDS = 30 V
ID = 75 A
16
12
8
4
Crss
0
0
0
11
22
33
44
VDS – Drain-to-Source Voltage (V)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
55
0
50
100
150
200
Qg – Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
2-3
SUP/SUB75P05-08
New Product
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
1.6
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
VGS = 10 V
ID = 30 A
1.2
0.8
TJ = 150C
TJ = 25C
10
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (C)
VSD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
70
65
ID = 250 mA
IAV (A) @ TJ = 25C
V(BR)DSS (V)
100
I Dav (a)
10
1
0
10
IAV (A) @ TJ = 150C
60
55
50
1
45
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
www.vishay.com FaxBack 408-970-5600
2-4
0.1
1
40
–50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (C)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
SUP/SUB75P05-08
New Product
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
100
I D – Drain Current (A)
I D – Drain Current (A)
75
60
45
30
10 ms
Limited
by rDS(on)
100 ms
1 ms
10
10 ms
TC = 25C
Single Pulse
15
0
100 ms
dc
1
0
25
50
75
100
125
150
175
0.1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
1
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (C)
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
500
90
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com FaxBack 408-970-5600
2-5