Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175C MOSFET VDS (V) –60 rDS(on) () ID (A) 0.120 @ VGS = –10 V 3.5 0.15 @ VGS = –4.5 V 3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS –60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID Unit V 3.5 3.0 IDM 30 IS –2.5 A 3.0 PD W 2.1 TJ, Tstg –55 to 175 C Symbol Limit Unit RthJA 50 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70742 S-99445—Rev. C, 29-Nov-99 www.vishay.com FaxBack 408-970-5600 2-1 Si9407AEY Vishay Siliconix Parameter Typa Symbol Test Condition Min Max VGS(th) VDS = VGS, ID = –250 mA –1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –-60 V, VGS = 0 V –1 VDS = –-60 V, VGS = 0 V, TJ = 55C –10 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb rDS(on) Forward Transconductanceb Diode Forward Voltageb VDS v –5 V, VGS = –10 V V –20 VGS = –10 V, ID = 3.5 A 0.120 0.150 VDS = –15 V, ID = –3.5 A VSD IS = –2.5 A, VGS = 0 V mA A VGS = –4.5 V, ID = 3.1 A gfs nA 8 W S –1.2 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs 18 VDS = –30 30 V V, VGS = –10 10 V V, ID = –3.5 35A 30 nC C 5 Gate-Drain Charge Qgd Turn-On Delay Time td(on) 8 15 tr 10 20 35 50 12 25 70 100 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2 VDD = –30 30 V V,, RL = 30 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –2.5 A, di/dt = 100 A/ms ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70742 S-99445—Rev. C, 29-Nov-99 Si9407AEY Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 10, 9, 8, 7 V TC = –55C 6V 5V 25 I D – Drain Current (A) I D – Drain Current (A) 25 20 15 4V 10 2V 5 25C 20 150C 15 10 5 3V 0 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 1200 50 60 Ciss C – Capacitance (pF) VGS = 4.5 V 0.10 VGS = 10 V 0.05 900 600 300 Coss Crss 0 0.00 0 5 10 15 20 25 0 30 10 Gate Charge 10 2.0 r DS(on)– On-Resistance ( ) (Normalized) VDS = 30 V ID = 3.5 A 6 4 2 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 70742 S-99445—Rev. C, 29-Nov-99 20 30 40 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 6 1500 0.15 0 5 Capacitance On-Resistance vs. Drain Current 8 4 VGS – Gate-to-Source Voltage (V) 0.20 r DS(on)– On-Resistance ( ) 3 16 20 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 1.5 1.0 0.5 0 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si9407AEY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 30 TJ = 175C 10 TJ = 25C 0 0.15 ID = 3.5 A 0.10 0.05 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 50 0.8 0.6 40 0.4 ID = 250 mA Power (W) V GS(th) Variance (V) 2 0.2 30 20 0.0 10 –0.2 –0.4 –50 –25 0 25 50 75 100 125 150 0 0.01 175 0.1 TJ – Temperature (C) 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70742 S-99445—Rev. C, 29-Nov-99