SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.010 @ VGS = 4.5 V 16 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 Drain Connected to Tab G D G S Top View Ordering Information: S SUD50N03-07 SUD50N03-07—E3 ( Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TA = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 20 ID 14 IDM 100 IS 20 A 136 PD W 5a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RthJA Maximum Junction-to-Case RthJC Typical Maximum Unit 30 0.85 1.1 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70767 S-40272—Rev. E, 23-Feb-04 www.vishay.com 1 SUD50N03-07 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 Forward Transconductanceb rDS(on) gfs mA 0.007 VGS = 10 V, ID =20 A, TJ = 125_C 0.011 VGS = 4.5 V, ID = 20 A 0.010 VDS = 15 V, ID = 20 A nA A VGS = 10 V, ID =20 A Drain-Source On-State Resistanceb V 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec VGS = 0 V, VDS = 25 V, f = 1 MHz 70 pF 130 16 VDS = 15 V,, VGS = 10 V,, ID = 50 A nC 10 Rg td(off) 1100 450 0.5 td(on) tr Timec 5600 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W tf 3.1 14 30 11 20 60 120 15 40 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 55 100 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70767 S-40272—Rev. E, 23-Feb-04 SUD50N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 100 VGS = 10, 9, 8, 7, 6 V 80 I D − Drain Current (A) I D − Drain Current (A) 200 150 5V 100 4V 50 60 40 TC = 125_C 20 25_C −55_C 3V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.0150 120 90 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 25_C 125_C 60 30 0 0.0125 VGS = 4.5 V 0.0100 0.0075 VGS = 10 V 0.0050 0.0025 0.0000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) 100 Gate Charge 20 V GS − Gate-to-Source Voltage (V) Ciss C − Capacitance (pF) 80 ID − Drain Current (A) Capacitance 8000 60 6000 4000 2000 Crss 0 VDS = 15 V ID = 45 A 16 12 8 4 0 0 5 10 15 20 25 VDS − Drain-to-Source Voltage (V) Document Number: 70767 S-40272—Rev. E, 23-Feb-04 30 0 30 60 90 120 Qg − Total Gate Charge (nC) www.vishay.com 3 SUD50N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 45 A I S − Source Current (A) 2.0 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 TJ = 150_C TJ = 25_C 1 150 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS 24 500 20 100 I D − Drain Current (A) I D − Drain Current (A) Maximum Drain Current vs. Ambiemt Temperature 16 12 8 Safe Operating Area 10, 100 ms Limited by rDS(on) 1 ms 10 10 ms 100 ms 1s 1 TA = 25_C Single Pulse 4 dc 0 0 25 50 75 100 125 150 0.1 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70767 S-40272—Rev. 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The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1