SUD50N02-12P Datasheet

SUD50N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.012 @ VGS = 10 V
40c
0.026 @ VGS = 4.5 V
27c
APPLICATIONS
VDS (V)
20
D
TO-252
Drain Connected to Tab
G
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% Rg Tested
D
D
D
D
D High-Side Synchronous Buck DC/DC
Conversion
− Desktop
− Server
G
S
Top View
S
Ordering Information: SUD50N02-12P
SUD50N02-12P—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
TC = 25_C
Continuous Drain Currenta
TC= 100_C
Pulsed Drain Current
V
40c
ID
28c
A
IDM
90
IS
4
TC = 25_C
PD
33.3
TA = 25_C
PD
6a
TJ, Tstg
−55 to 175
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation
Unit
Operating Junction and Storage Temperature Range
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Symbol
t v 10 sec
Steady State
Maximum Junction-to-Case
RthJA
RthJC
Typical
Maximum
20
25
40
50
3.7
4.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A.
Document Number: 72095
S-41168—Rev. C, 14-Jun-04
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SUD50N02-12P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
gfs
0.012
0.0143
VGS = 4.5 V, ID = 15 A
Forward Transconductanceb
mA
A
0.0095
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
0.021
VDS = 15 V, ID = 20 A
W
0.026
10
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
1000
VGS = 0 V, VDS = 10 V, f = 1 MHz
1.5
3.0
4.5
7.5
12
W
3.5
VDS = 10 V, VGS = 4.5 V, ID = 50 A
nC
2.6
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
td(off)
Fall Timec
pF
p
180
tr
Turn-Off Delay Timec
370
tf
11
20
10
15
24
35
9
15
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.1
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
20
40
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
90
90
6V
VGS = 10 thru 7 V
TC = −55_C
75
60
I D − Drain Current (A)
I D − Drain Current (A)
75
5V
45
4V
30
15
25_C
60
125_C
45
30
15
3V
0
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)
Document Number: 72095
S-41168—Rev. C, 14-Jun-04
SUD50N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
0.040
0.035
TC = −55_C
40
r DS(on)− On-Resistance ( W )
g fs − Transconductance (S)
50
25_C
30
125_C
20
10
0.030
VGS = 4.5 V
0.025
0.020
0.015
VGS = 10 V
0.010
0.005
0
0.000
0
10
20
30
40
0
50
15
30
ID − Drain Current (A)
Ciss
900
600
Coss
Crss
300
0
90
VDS = 10 V
ID = 50 A
8
6
4
2
0
0
4
8
12
16
20
0
4
VDS − Drain-to-Source Voltage (V)
1.6
8
12
16
Qg − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
I S − Source Current (A)
1.8
rDS(on) − On-Resiistance
(Normalized)
75
Gate Charge
10
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
1200
60
ID − Drain Current (A)
Capacitance
1500
45
1.4
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
TJ − Junction Temperature (_C)
Document Number: 72095
S-41168—Rev. C, 14-Jun-04
150
175
1
0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
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SUD50N02-12P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Limited
by rDS(on)
16
10, 100 ms
100
I D − Drain Current (A)
I D − Drain Current (A)
Safe Operating Area
1000
20
12
8
4
1 ms
10
10 ms
TA = 25_C
Single Pulse
0.1
0
0
25
50
75
100
125
150
100 ms
1s
10 s
100 s
dc
1
0.01
175
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TA − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
1000
Square Wave Pulse Duration (sec)
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Document Number: 72095
S-41168—Rev. C, 14-Jun-04
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Document Number: 91000
Revision: 18-Jul-08
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