AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 750V IDM 104A RDS(ON),max 0.19Ω Qg,typ 26.4nC Eoss @ 400V 5.8µC 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT25S65L & AOB25S65 & AOTF25S65L Top View TO-220 TO-263 D2PAK TO-220F D D G D S AOT25S65 G D S AOTF25S65 Gate-Source Voltage VGS TC=25°C TC=100°C Pulsed Drain Current C ID S AOB25S65 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT25S65/AOB25S65 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G S G AOTF25S65 650 AOTF25S65L ±30 25 16 IDM Units V V 25* 25* 16* 16* A 104 Avalanche Current C IAR 7 A Repetitive avalanche energy C EAR 96 mJ Single pulsed avalanche energy G EAS TC=25°C B Power Dissipation Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD TJ, TSTG TL RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Mar 2012 2.9 dv/dt Symbol RθJA mJ 750 357 50 0.4 100 20 -55 to 150 40 W 0.3 W/ oC V/ns °C 300 °C AOT25S65/AOB25S65 AOTF25S65 AOTF25S65L Units 65 65 65 °C/W 0.5 0.35 -2.5 -3.1 °C/W °C/W www.aosmd.com Page 1 of 7 AOT25S65/AOB25S65/AOTF25S65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 650 - - ID=250µA, VGS=0V, TJ=150°C 700 750 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 1 VDS=520V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=12.5A, TJ=25°C - 0.165 0.19 Ω VGS=10V, ID=12.5A, TJ=150°C - 0.47 0.53 Ω IS=12.5A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 25 A Maximum Body-Diode Pulsed Current - - 104 A - 1278 - pF - 87 - pF - 64.5 - pF - 236.7 - pF VGS=0V, VDS=100V, f=1MHz - 1.4 - pF VGS=0V, VDS=0V, f=1MHz - 4.9 - Ω - 26.4 - nC - 6.2 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=12.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 9.5 - nC tD(on) Turn-On DelayTime - 29 - ns tr Turn-On Rise Time - 30 - ns tD(off) Turn-Off DelayTime - 112 - ns tf trr Turn-Off Fall Time - 34 - ns IF=12.5A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=12.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 408 - ns Irm IF=12.5A,dI/dt=100A/µs,VDS=400V - 33 - Qrr Body Diode Reverse Recovery Charge IF=12.5A,dI/dt=100A/µs,VDS=400V - 8.27 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Mar 2012 www.aosmd.com Page 2 of 7 AOT25S65/AOB25S65/AOTF25S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 50 10V 10V 30 40 7V ID (A) 30 ID (A) 6V 25 6V 5.5V 20 5.5V 20 15 5V 10 5V 10 VGS=4.5V 5 VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 1000 0.5 -55°C VDS=20V 100 0.4 RDS(ON) (Ω ) 125°C 10 ID(A) 7V 1 0.3 VGS=10V 0.2 25°C 0.1 0.1 0.0 0.01 2 4 6 8 0 10 VGS(Volts) Figure 3: Transfer Characteristics 20 30 40 50 60 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage -50 0 1.2 3 2.5 1.1 VGS=10V ID=12.5A BVDSS (Normalized) Normalized On-Resistance 10 2 1.5 1 0.5 0 -100 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev1: Mar 2012 -50 1 0.9 0.8 0.7 -100 www.aosmd.com 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 7 AOT25S65/AOB25S65/AOTF25S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=480V ID=12.5A 1.0E+00 9 VGS (Volts) IS (A) 25°C 1.0E-01 1.0E-02 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 0 8 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 24 32 40 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 12 Ciss 10 1000 100 8 Eoss(uJ) Capacitance (pF) 16 Coss 6 Eoss 4 10 2 Crss 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 100 200 300 400 500 VDS (Volts) Figure 10: Coss stored Energy 600 1000 1000 100 100 RDS(ON) limited 10 10µs 100µs 1 1ms DC ID (Amps) ID (Amps) 0 600 10 10µs RDS(ON) limited 100µs 1ms 1 10ms 10ms 0.1 DC 0.1 TJ(Max)=150°C TC=25°C 0.01 0.1s 1s TJ(Max)=150°C TC=25°C 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)25S65 (Note F) Rev1: Mar 2012 www.aosmd.com 0.1 1 10 100 1000 VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF25S65(Note F) Page 4 of 7 AOT25S65/AOB25S65/AOTF25S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 900 1000 750 10µs RDS(ON) limited 10 100µs 1ms 1 10ms DC 0.1 EAS(mJ) ID (Amps) 100 600 450 300 0.1s TJ(Max)=150°C TC=25°C 1s 150 0 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Avalanche energy VDS (Volts) Figure 13: Maximum Forward Biased Safe Operating Area for AOTF25S65L(Note F) 30 Current rating ID(A) 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (°C) Figure 15: Current De-rating (Note B) Rev1: Mar 2012 www.aosmd.com Page 5 of 7 AOT25S65/AOB25S65/AOTF25S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.35°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.001 0.00001 Ton 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)25S65 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF25S65 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF25S65L (Note F) Rev1: Mar 2012 www.aosmd.com Page 6 of 7 AOT25S65/AOB25S65/AOTF25S65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev1: Mar 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7