PANASONIC 2SC829

Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
■ Features
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
+0.2
0.45 –0.1
0.45 –0.1
1.27
1.27
2.3±0.2
■ Absolute Maximum Ratings
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Forward current transfer ratio
hFE*
VCE = 10V, IC = 1mA
70
150
Transition frequency
fT
VCB = 10V, IC = 1mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
*h
FE
V
250
230
1.3
MHz
1.6
pF
60
Ω
Rank classification
Rank
B
C
hFE
70 ~ 160
110 ~ 250
1
Transistor
2SC829
PC — Ta
IC — VCE
60
IB=100µA
350
300
250
200
150
100
80µA
8
60µA
6
40µA
4
20µA
2
40
25˚C
30
Ta=75˚C
–25˚C
20
10
50
0
60
80 100 120 140 160
0
0
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
100
80
60
40
20
0
1.2
1.8
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
fT — IE
10
30
Reverse transfer impedance Zrb (Ω)
400
VCB=10V
6V
200
100
–1
–3
–10
–30
Emitter current IE (mA)
–100
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.1
0.3
60
50
40
VCB=6V
10V
20
10
– 0.3
–1
1
3
10
30
100
Cre — VCE
70
0
– 0.1
2.0
Collector current IC (mA)
f=2MHz
Ta=25˚C
30
1.6
250
Zrb — IE
500
1.2
VCE=10V
100
80
Ta=25˚C
0.8
300
IB/IB=10
Collector current IC (mA)
600
0
– 0.1 – 0.3
0.4
Base to emitter voltage VBE (V)
hFE — IC
100
Base to emitter voltage VBE (V)
300
0
VCE(sat) — IC
120
0.6
18
Collector to emitter voltage VCE (V)
IB — VBE
0
12
Forward current transfer ratio hFE
40
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Base current IB (µA)
50
Collector current IC (mA)
10
400
0
Transition frequency fT (MHz)
VCE=10V
Ta=25˚C
450
0
2
IC — VBE
12
Collector current IC (mA)
Collector power dissipation PC (mW)
500
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
2SC829
Transistor
Cob — VCB
bie — gie
1.0
0.8
0.6
0.4
Reverse transfer susceptance bre (mS)
1.2
0
yie=gie+jbie
VCE=10V
Input susceptance bie (mS)
Collector output capacitance Cob (pF)
IE=–1mA
f=1MHz
Ta=25˚C
1.4
100
10
6
25
4
10.7
IE=– 0.4mA
–1mA
–2mA
–4mA
–7mA
2
f=0.45MHz
0
1
3
10
30
0
100
Collector to base voltage VCB (V)
4
100
58
–1mA
–4mA
25
58
100
–40
100
58
f=10.7MHz
25
–60
58
IE=–7mA
–80
–100
1.0
0.8
58
25
40
60
–4mA
–2.0
–2.5
–3.0
– 0.5
100
IE=–7mA
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
80
Forward transfer conductance
100
gfe (mS)
–7mA
–4mA
–2mA
–1mA
IE=– 0.1mA
0.4
10.7
0.2
yoe=goe+jboe
VCE=10V
f=0.45MHz
0
20
–2mA
– 0.4mA
0.6
yfe=gfe+jbfe
VCE=10V
–120
0
–1.5
100
10.7
–2mA
100
20
– 0.4mA
–1mA
1.2
0.45
Output susceptance boe (mS)
– 0.1mA
–20
25
16
58
–1.0
boe — goe
0.45
10.7
–0.4mA
12
Input conductance gie (mS)
bfe — gfe
0
8
f=0.45MHz
10.7
25
yre=gre+jbre
VCE=10V
– 0.5
58
8
0.2
0
Forward transfer susceptance bfe (mS)
bre — gre
12
1.6
0
0.2
0.4
0.6
0.8
1.0
Output conductance goe (mS)
3