Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm ■ Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1mA 70 150 Transition frequency fT VCB = 10V, IC = 1mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz *h FE V 250 230 1.3 MHz 1.6 pF 60 Ω Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 1 Transistor 2SC829 PC — Ta IC — VCE 60 IB=100µA 350 300 250 200 150 100 80µA 8 60µA 6 40µA 4 20µA 2 40 25˚C 30 Ta=75˚C –25˚C 20 10 50 0 60 80 100 120 140 160 0 0 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 100 80 60 40 20 0 1.2 1.8 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 –30 Emitter current IE (mA) –100 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0.3 60 50 40 VCB=6V 10V 20 10 – 0.3 –1 1 3 10 30 100 Cre — VCE 70 0 – 0.1 2.0 Collector current IC (mA) f=2MHz Ta=25˚C 30 1.6 250 Zrb — IE 500 1.2 VCE=10V 100 80 Ta=25˚C 0.8 300 IB/IB=10 Collector current IC (mA) 600 0 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter voltage VBE (V) 300 0 VCE(sat) — IC 120 0.6 18 Collector to emitter voltage VCE (V) IB — VBE 0 12 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Base current IB (µA) 50 Collector current IC (mA) 10 400 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C 450 0 2 IC — VBE 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC829 Transistor Cob — VCB bie — gie 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.2 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=–1mA f=1MHz Ta=25˚C 1.4 100 10 6 25 4 10.7 IE=– 0.4mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 100 58 –1mA –4mA 25 58 100 –40 100 58 f=10.7MHz 25 –60 58 IE=–7mA –80 –100 1.0 0.8 58 25 40 60 –4mA –2.0 –2.5 –3.0 – 0.5 100 IE=–7mA – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 80 Forward transfer conductance 100 gfe (mS) –7mA –4mA –2mA –1mA IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA – 0.4mA 0.6 yfe=gfe+jbfe VCE=10V –120 0 –1.5 100 10.7 –2mA 100 20 – 0.4mA –1mA 1.2 0.45 Output susceptance boe (mS) – 0.1mA –20 25 16 58 –1.0 boe — goe 0.45 10.7 –0.4mA 12 Input conductance gie (mS) bfe — gfe 0 8 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3