Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. 0.80±0.05 ■ Features 1.20±0.05 3 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5˚ Symbol Rating Unit VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Parameter Collector-base voltage (Emitter open) 0 to 0.01 ■ Absolute Maximum Ratings Ta = 25°C 1 : Base 2 : Emitter 3 : Collector SSSMini3-F1 Package Marking Symbol: 7H ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = −100 mA, IB = −10 mA Min Typ Max Unit V 180 − 0.2 − 0.1 µA −100 µA 390 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.2 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2003 SJC00302AED 1 2SA2078 PC Ta IC VCE −60 40 20 −250 µA −40 −200 µA −30 −150 µA −20 −100 µA −10 0 20 60 40 80 100 0 120 140 Ambient temperature Ta (°C) Collector current IC (mA) Base current IB (mA) −1.5 −1.0 0 − 0.2 − 0.4 − 0.6 Ta = 75°C −60 25°C −40 0 − 0.8 0 − 0.2 − 0.4 − 0.6 − 0.8 VCE = −10 V Forward current transfer ratio hFE 250 25°C 200 −25°C 150 100 50 −10 −1.2 −100 Collector current IC (mA) −1 000 10 f = 1 MHz Ta = 25°C 1 0 −8 −16 −24 −32 −40 Collector-base voltage VCB (V) SJC00302AED − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Base current IB (mA) −1 IC / IB = 10 Ta = 75°C − 0.1 −25°C 25°C − 0.01 −1 −10 Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC −1 −1.0 Base-emitter voltage VBE (V) Ta = 75°C 0 VCE(sat) IC −25°C −80 Base-emitter voltage VBE (V) 300 −40 0 −12 −20 − 0.5 2 −10 −100 −2.0 0 −8 VCE = −10 V −2.5 0 −6 −60 IC VBE −120 VCE = −10 V Ta = 25°C −3.0 −4 −80 Collector-emitter voltage VCE (V) IB VBE −3.5 −2 −100 −20 −50 µA 0 VCE = −10 V Ta = 25°C −120 Ta = −300 µA Collector-emitter saturation voltage VCE(sat) (V) 60 0 Ta = 25°C −50 80 IC I B −140 Collector current IC (mA) 100 Collector current IC (mA) Collector power dissipation PC (mW) 120 −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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