Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V 0.45+0.15 –0.1 2.5+0.6 –0.2 Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 10 V Collector current IC 5 A Peak collector current * ICP 9 A Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package Note) *: t = 380 µs ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 10 V Collector-emitter voltage (Base open) VCEO IC = 10 µA, IB = 0 10 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 5 V, IB = 0 1.0 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IE = 0 Forward current transfer ratio * hFE1 VCE = 2 V, IC = 0.5 A 300 hFE2 VCE = 2 V, IC = 2 A 195 VCE(sat) IC = 3 A, IB = 0.1 A 0.28 VCB = 6 V, IE = −50 mA, f = 200 MHz 170 VCB = 20 V, IE = 0, f = 1 MHz 45 Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob Conditions Min Typ Max Unit 0.1 µA 800 0.50 V MHz 65 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: February 2003 SJC00267DED 1 2SD2504 PC Ta IC VCE 4.0 Ta = 25°C 400 200 9 mA VCE = 2 V 1.0 8 mA 7 mA 2.5 6 mA 5 mA 2.0 4 mA 1.5 3 mA 1.0 2 mA 0.5 1 mA 0.8 Ta = 85°C 0.6 −25°C 25°C 0.4 0.2 40 80 120 0 160 0 2 Collector-emitter saturation voltage VCE(sat) (V) 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Base current IB (mA) 10 10 15 0 0.2 0.4 0.1 −25°C 0.01 0.001 0.1 20 25 0.8 1.0 1.2 1.4 hFE IC Ta = 85°C 25°C 0.6 Base-emitter voltage VBE (V) 800 1 VCE = 2 V Ta = 85°C 600 25°C 500 −25°C 400 300 200 100 1 Collector current IC (A) 100 5 0 12 700 f = 1 MHz Ta = 25°C 1 10 IC / IB = 30 Cob VCB 1 000 10 8 VCE(sat) IC VCE = 2 V Ta = 25°C 0 6 Collector-emitter voltage VCE (V) IC I B 0 4 Forward current transfer ratio hFE 0 0.5 Collector current IC (A) IB = 10 mA 3.0 Ambient temperature Ta (°C) Collector output capacitance C (pF) (Common base, input open circuited) ob 1.2 Collector current IC (A) 600 0 30 Collector-base voltage VCB (V) 2 IC VBE 3.5 Collector current IC (A) Collector power dissipation PC (mW) 800 SJC00267DED 10 0 0.001 0.01 0.1 1 10 Collector current IC (A) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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