Datasheet

AON6248
60V N-Channel MOSFET
General Description
Product Summary
VDS
• The AON6248 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
RDS(ON) (at VGS=10V)
< 11.5mΩ
RDS(ON) (at VGS=4.5V)
< 14.7mΩ
100% UIS Tested
100% Rg Tested
• RoHS and Halogen-Free Compliant
DFN5X6
Top View
60V
53A
ID (at VGS=10V)
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: October 2015
IAS
30
A
EAS
45
mJ
69.5
Steady-State
Steady-State
W
27.5
7.4
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
A
14
PDSM
TA=70°C
A
17.5
PD
TC=100°C
V
110
IDSM
TA=70°C
±20
34
IDM
TA=25°C
Continuous Drain
Current
Units
V
53
ID
TC=100°C
Maximum
60
-55 to 150
Typ
14
40
1.3
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°C
Max
17
55
1.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6248
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
TJ=55°C
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2
2.5
V
9.2
11.5
17
21.5
11.3
14.7
mΩ
1
V
53
A
A
52
0.71
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
µA
5
VGS=10V, ID=20A
VGS=0V, VDS=30V, f=1MHz
0.8
mΩ
S
1543
pF
165
pF
9
VGS=0V, VDS=0V, f=1MHz
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IDSS
RDS(ON)
Typ
1.7
pF
2.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
20
28
nC
Qg(4.5V) Total Gate Charge
8.5
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
5
nC
1.8
nC
6
ns
2.5
ns
25
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
65
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2015
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Page 2 of 6
AON6248
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
VDS=5V
4.5V
80
60
6V
60
ID(A)
ID (A)
3.5V
40
40
20
20
125°C
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
15
3
4
5
Normalized On-Resistance
2.2
VGS=4.5V
12
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
9
VGS=10V
6
3
2
VGS=10V
ID=20A
1.8
17
5
2
VGS=4.5V
10
I =20A
1.6
1.4
1.2
D
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+02
ID=20A
1.0E+01
20
40
15
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2015
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6248
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=30V
ID=20A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
8
6
4
1200
1000
800
600
400
2
Coss
200
0
Crss
0
0
5
10
15
20
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10.0
100µs
1.0
1ms
10ms
Power (W)
RDS(ON)
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
10µs
100.0
ID (Amps)
20
17
5
2
10
120
80
40
1
10
100
1000
0
0.0001
0.001
0.01
0.1
1
10
100
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.8°C/W
1
PD
0.1
Ton
Single Pulse
0.01
1E-05
0.0001
T
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2015
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Page 4 of 6
AON6248
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
TA=100°C
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
10
TA=125°C
60
50
40
30
20
10
1
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
150
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
17
5
2
10
100
20
10
10
1
1E-05
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
T
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2015
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Page 5 of 6
AON6248
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: October 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6