AON6248 60V N-Channel MOSFET General Description Product Summary VDS • The AON6248 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS=4.5V) < 14.7mΩ 100% UIS Tested 100% Rg Tested • RoHS and Halogen-Free Compliant DFN5X6 Top View 60V 53A ID (at VGS=10V) D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2015 IAS 30 A EAS 45 mJ 69.5 Steady-State Steady-State W 27.5 7.4 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 14 PDSM TA=70°C A 17.5 PD TC=100°C V 110 IDSM TA=70°C ±20 34 IDM TA=25°C Continuous Drain Current Units V 53 ID TC=100°C Maximum 60 -55 to 150 Typ 14 40 1.3 www.aosmd.com °C Max 17 55 1.8 Units °C/W °C/W °C/W Page 1 of 6 AON6248 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 110 TJ=55°C TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2 2.5 V 9.2 11.5 17 21.5 11.3 14.7 mΩ 1 V 53 A A 52 0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Coss µA 5 VGS=10V, ID=20A VGS=0V, VDS=30V, f=1MHz 0.8 mΩ S 1543 pF 165 pF 9 VGS=0V, VDS=0V, f=1MHz Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ 1.7 pF 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 20 28 nC Qg(4.5V) Total Gate Charge 8.5 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 5 nC 1.8 nC 6 ns 2.5 ns 25 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 65 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2015 www.aosmd.com Page 2 of 6 AON6248 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V VDS=5V 4.5V 80 60 6V 60 ID(A) ID (A) 3.5V 40 40 20 20 125°C VGS=3V 25°C 0 0 0 1 2 3 4 1 5 15 3 4 5 Normalized On-Resistance 2.2 VGS=4.5V 12 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 9 VGS=10V 6 3 2 VGS=10V ID=20A 1.8 17 5 2 VGS=4.5V 10 I =20A 1.6 1.4 1.2 D 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 15 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6248 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 VDS=30V ID=20A 1600 Ciss 1400 Capacitance (pF) VGS (Volts) 8 6 4 1200 1000 800 600 400 2 Coss 200 0 Crss 0 0 5 10 15 20 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10.0 100µs 1.0 1ms 10ms Power (W) RDS(ON) DC TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=150°C TC=25°C 160 10µs 10µs 100.0 ID (Amps) 20 17 5 2 10 120 80 40 1 10 100 1000 0 0.0001 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.8°C/W 1 PD 0.1 Ton Single Pulse 0.01 1E-05 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2015 www.aosmd.com Page 4 of 6 AON6248 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 70 TA=100°C TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C 10 TA=125°C 60 50 40 30 20 10 1 0 1 10 100 1000 0 25 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 150 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 17 5 2 10 100 20 10 10 1 1E-05 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 T 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2015 www.aosmd.com Page 5 of 6 AON6248 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6