PANASONIC 2SB1548A

Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
Unit: mm
■ Features
■ Absolute Maximum Ratings
Parameter
(TC=25˚C)
Symbol
Collector to
2SB1548
base voltage
2SB1548A
Collector to
2SB1548
Ratings
–60
VCBO
–80
–60
VCEO
emitter voltage 2SB1548A
–80
Unit
V
V
VEBO
–5
Peak collector current
ICP
–5
A
Collector current
IC
–3
A
Emitter to base voltage
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
Symbol
2SB1548
current
2SB1548A
Collector cutoff
2SB1548
current
2SB1548A
Emitter cutoff current
ICES
ICEO
IEBO
Collector to emitter
2SB1548
voltage
2SB1548A
Forward current transfer ratio
Conditions
2.54±0.3
3 5.08±0.5
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min
typ
max
–200
VCE = –80V, VBE = 0
–200
VCE = –30V, IB = 0
–300
VCE = –60V, IB = 0
–300
VEB = –5V, IC = 0
–1
IC = –30mA, IB = 0
hFE1*
VCE = –4V, IC = –1A
70
10
VCE = –4V, IC = –3A
VBE
VCE = –4V, IC = –3A
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = – 0.375A
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Unit
µA
µA
mA
–60
VCEO
hFE2
FE1
2
0.55±0.15
VCE = –60V, VBE = 0
Base to emitter voltage
*h
0.8±0.1
(TC=25˚C)
Parameter
Collector cutoff
2.6±0.1
1.6±0.2
W
2
■ Electrical Characteristics
1.4±0.2
1
PC
2.9±0.2
φ3.2±0.1
V
25
4.6±0.2
9.9±0.3
3.0±0.5
●
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
15.0±0.5
●
13.7±0.2
4.2±0.2
●
V
–80
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
250
–1.8
–1.2
V
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
1
Power Transistors
2SB1548, 2SB1548A
PC — Ta
IC — VCE
–8
–7
28
(1)
24
20
16
12
8
IB=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–2
–20mA
–16mA
–12mA
–1
–8mA
(2)
20
40
60
80 100 120 140 160
–2
–2
–4
–6
–8
–10
–12
0
fT — IC
VCE=–4V
TC=25˚C
3000
1000
– 0.1
– 0.03
– 0.01
– 0.003
–1
–3
300
100
30
10
3
Collector current IC (A)
–1
–3
Area of safe operation (ASO)
ICP
t=1ms
10ms
DC
– 0.3
– 0.1
– 0.03
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE
10
3
1
(V)
–1
–3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
–1
30
0.1
– 0.01 – 0.03 – 0.1 – 0.3
–10
103
IC
100
Collector current IC (A)
–100
–30
VCE=–10V
f=10MHz
TC=25˚C
300
0.3
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
(1) Without heat sink
(2) With a 100 × 80 × t2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
–1.2
1000
Transition frequency fT (MHz)
–1
Forward current transfer ratio hFE
IC/IB=10
TC=25˚C
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
hFE — IC
– 0.3
Collector current IC (A)
–3
–1
10000
–3
– 0.01
–1
–4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–10
–3
–5
0
0
Ambient temperature Ta (˚C)
–10
–6
–4mA
0
0
2
Collector current IC (A)
–5
32
4
VCE=–4V
TC=25˚C
TC=25˚C
(1) TC=Ta
(2) Without heat sink (PC=2W)
36
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
40
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
–10