Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SB1548 base voltage 2SB1548A Collector to 2SB1548 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB1548A –80 Unit V V VEBO –5 Peak collector current ICP –5 A Collector current IC –3 A Emitter to base voltage Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB1548 current 2SB1548A Collector cutoff 2SB1548 current 2SB1548A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SB1548 voltage 2SB1548A Forward current transfer ratio Conditions 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package min typ max –200 VCE = –80V, VBE = 0 –200 VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VEB = –5V, IC = 0 –1 IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 10 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Unit µA µA mA –60 VCEO hFE2 FE1 2 0.55±0.15 VCE = –60V, VBE = 0 Base to emitter voltage *h 0.8±0.1 (TC=25˚C) Parameter Collector cutoff 2.6±0.1 1.6±0.2 W 2 ■ Electrical Characteristics 1.4±0.2 1 PC 2.9±0.2 φ3.2±0.1 V 25 4.6±0.2 9.9±0.3 3.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 15.0±0.5 ● 13.7±0.2 4.2±0.2 ● V –80 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A 250 –1.8 –1.2 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors 2SB1548, 2SB1548A PC — Ta IC — VCE –8 –7 28 (1) 24 20 16 12 8 IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –2 –20mA –16mA –12mA –1 –8mA (2) 20 40 60 80 100 120 140 160 –2 –2 –4 –6 –8 –10 –12 0 fT — IC VCE=–4V TC=25˚C 3000 1000 – 0.1 – 0.03 – 0.01 – 0.003 –1 –3 300 100 30 10 3 Collector current IC (A) –1 –3 Area of safe operation (ASO) ICP t=1ms 10ms DC – 0.3 – 0.1 – 0.03 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE 10 3 1 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C –1 30 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 IC 100 Collector current IC (A) –100 –30 VCE=–10V f=10MHz TC=25˚C 300 0.3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –1.2 1000 Transition frequency fT (MHz) –1 Forward current transfer ratio hFE IC/IB=10 TC=25˚C – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Base to emitter voltage VBE (V) hFE — IC – 0.3 Collector current IC (A) –3 –1 10000 –3 – 0.01 –1 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –3 –5 0 0 Ambient temperature Ta (˚C) –10 –6 –4mA 0 0 2 Collector current IC (A) –5 32 4 VCE=–4V TC=25˚C TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10