Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 25 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Collector cutoff current 2.7±0.2 W 2 ■ Electrical Characteristics 4.2±0.2 5.5±0.2 2.54±0.25 PC Ta=25°C 16.7±0.3 ● 10.0±0.2 4.0 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Features Solder Dip ■ Unit: mm max Unit ICES VCE = 60V, VBE = 0 Conditions min typ 200 µA ICEO VCE = 30V, IB = 0 300 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 1 mA Collector to emitter voltage VCEO IC = 30mA, IB = 0 60 hFE1 VCE = 4V, IC = 0.1A 35 hFE2* VCE = 4V, IC = 1A 70 Base to emitter voltage VBE VCE = 4V, IC = 1A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.2A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 250 1.2 2 V V 20 MHz 0.2 µs 3.5 µs 0.7 µs Rank classification Rank Q P hFE2 70 to 150 120 to 250 1 Power Transistors 2SD1480 PC — Ta IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) 30 (1) 25 15 (2) IB=100mA 80mA 3 50mA 40mA 30mA 2 20mA 10mA 1 25 50 75 100 125 150 2 4 3 2 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 Transition frequency fT (MHz) 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) t=10ms 3 IC 1ms 1 DC 0.3 0.1 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) 10 ICP 100 30 10 3 1 0.1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 102 3.0 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.5 0.3 1 0.01 0.03 10 100 30 2.0 fT — IC 1000 TC=100˚C 1.5 VCE=4V Forward current transfer ratio hFE 10 1.0 1000 IC/IB=10 30 3 0.5 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) 4 0 0 Ambient temperature Ta (˚C) 2 –25˚C 1mA 0 1 TC=100˚C 1 5mA (4) 0 25˚C 5 4 (3) 5 VCE=4V TC=25˚C 20 10 6 Collector current IC (A) 35 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 40 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10