Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification ■ Features Parameter Collector to base voltage 2SB1605A Collector to 2SB1605 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB1605A –80 Unit V V Emitter to base voltage VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A Collector power TC=25°C dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C Symbol 2SB1605 current 2SB1605A Collector cutoff 2SB1605 current 2SB1605A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SB1605 voltage 2SB1605A Forward current transfer ratio Conditions 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package min typ max –200 VCE = –80V, VBE = 0 –200 VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 10 hFE2 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 0.75±0.1 VCE = –60V, VBE = 0 Base to emitter voltage *h 0.7±0.1 (TC=25˚C) Parameter Collector cutoff 2.6±0.1 1.2±0.15 1.45±0.15 W 2 2.9±0.2 3.0±0.2 (TC=25˚C) Symbol 2SB1605 φ3.2±0.1 15.0±0.3 ■ Absolute Maximum Ratings 4.6±0.2 9.9±0.3 4.1±0.2 8.0±0.2 Solder Dip ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● Unit: mm IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Unit µA µA mA V –80 250 –1.8 –1.2 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SB1605, 2SB1605A PC — Ta IC — VCE –5 30 (1) 20 10 IB=–100mA –4 –80mA –60mA –40mA –3 –30mA –20mA –2 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 VCE(sat) — IC 0 –6 –8 –10 3000 –1 TC=100˚C – 0.1 –25˚C 25˚C 300 100 TC=100˚C 25˚C –25˚C 30 10 3 Collector current IC (A) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–1 1 Time t (s) 10 300 100 30 10 3 102 10–2 –2.0 1000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1.6 VCE=–5V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) Forward current transfer ratio hFE –3 10–3 –1.2 fT — IC 1000 10–2 10–4 – 0.8 VCE=–4V –10 –3 – 0.4 Base to emitter voltage VBE (V) 10000 IC/IB=10 –30 –1 0 hFE — IC – 0.3 2 –12 10000 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C –4 Collector to emitter voltage VCE (V) –100 – 0.03 25˚C TC=100˚C –4mA –16mA 0 20 –6 –8mA (4) 0 –8 –2 –12mA –1 (2) (3) VCE=–4V Collector current IC (A) 40 –10 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 50 102 103 104 –10 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10