TIG067SS D

TIG067SS
IGBT
400V, 150A, VCE(sat);3.8V Single N-Channel
www.onsemi.com
Features
• Low-saturation Voltage
• Enhancement Type
• High Speed Switching
4.0V Drive
Built-in Gate-to-Emitter Protection Diode
• Pb-Free, Halogen Free and RoHS Compliance
•
•
Applications
• Light-controlling Flash
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage (DC)
VCES
Collector-to-Emitter Voltage (Pulse)
VCESP
Gate-to-Emitter Voltage (DC)
VGES
Gate-to-Emitter Voltage (Pulse)
VGESP
PW≤1ms
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
ICP
dv / dt
CM=600μF
VCE≤320V, starting Tch=25°C
Allowable Power Dissipation
PD
When mounted on FR4 substrate (11,680mm2×1.6mm)
1.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-40 to +150
°C
PW≤1ms
400
V
450
V
±6
V
±8
V
150
A
1500
V / μs
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7072-002
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2500 pcs./reel
TIG067SS-TL-2W
4.9
5
0.375
1
4
0.445
0.254 (GAGE PLANE)
0.175
1.55
1.375
1.27
0.715
Packing Type: TL Marking
3.9
6.0
8
0.22
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
TIG
067
TL
LOT No.
Electrical Connection
5 to 8
SOIC8
ORDERING INFORMATION
4
1 to 3
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October 2014 - Rev. 1
1
Publication Order Number :
TIG067SS/D
TIG067SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Cutoff Current
Collector-to-Emitter Breakdown Voltage
V(BR)CES
ICES
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Ratings
Conditions
min
400
IGES
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
VGE(off)
VCE=10V, IC=1mA
0.4
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=150A, VGE=4V
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Fall Time
tf
typ
V
3.8
VCE=10V, f=1MHz
IC=150A, VCC=320V, Resistor load VGE=4V, RG=36W
Unit
max
10
μA
±10
μA
1.0
V
5
V
5100
pF
59
pF
43
pF
270
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig1 Large Current R Load Switching Circuit
RL
CM
+
RG
VCC
TIG067SS
4V
0V
100kW
Note1. Gate Series Resistance RG ≥ 36W is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 1500 / μs is satisfied at customer’s actual set evaluation, RG < 36W can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.
ORDERING INFORMATION
Device
TIG067SS-TL-2W
Package
Shipping
memo
SOIC8
2,500pcs./reel
Pb-Free and Halogen Free
www.onsemi.com
2
TIG067SS
Tc
=
Collector Current, IC -- A
125
100
75
50
150
75
50
1
2
3
4
5
6
7
8
9
0
10
VCE -- VGE
8
7
6
5
130A
3
100A
2
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IT15735
VCE -- VGE
Tc=25°C
9
8
7
6
5
IC=150A
4
130A
3
100A
2
1
1.0
5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
IT15736
VCE -- VGE
10
1.0
10
9
IC=150A
0.5
Gate-to-Emitter Voltage, VGE -- V
Tc= --25°C
4
0
IT15734
5.0
IT15737
VCE(sat) -- Tc
6
Tc= 75°C
VGE=4V
9
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
°C
100
Collector-to-Emitter Voltage, VCE -- V
0
10
Collector-to-Emitter Voltage, VCE -- V
°C
25
25
Collector-to-Emitter Voltage, VCE -- V
8
7
6
5
IC=150A
130A
4
3
100A
5
0A
I C=15
130A
4
100A
3
2
2
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
1
--50
5.0
25
50
100
75
125
150
IT15739
Cies, Coes, Cres -- VCE
10000
7
5
VCE=10V
IC=1mA
0.8
0
Case Temperature, Tc -- °C
VGE(off) -- Tc
0.9
--25
IT15738
f=1MHz
Cies
3
0.7
Cies, Coes, Cres -- pF
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
75
125
25
0
5°
C
3.
0V
4.0
V
.0 V
150
VCE=5V
175
2.5V
VG
E=5
Collector Current, IC -- A
175
IC -- VGE
200
Tc=25°C
--2
IC -- VCE
200
0.6
0.5
0.4
0.3
0.2
2
1000
7
5
3
2
100
7
5
Coes
Cres
3
0.1
0
--50
2
--25
0
25
50
75
100
Case Temperature, Tc -- °C
125
10
150
0
2
4
6
8
10
12
14
16
Collector-to-Emitter Voltage, VCE -- V
IT15540
www.onsemi.com
3
18
20
IT15741
TIG067SS
SW Time -- ICP
3
1000
7
5
tf
3
2
tr
100
7
td(on)
5
3
1000
7
5
3
2
3
5
7
2
100
Collector Current (Pulse), ICP -- A
dv / dt -- RG
3000
7
5
1000
500
20
30
40
50
60
70
80
Gate Series Resistance, RG -- W
CM -- ICP
800
100
140
120
100
80
60
40
20
1
2
3
4
5
6
7
Gate-to-Emitter Voltage, VGE -- V
dv / dt -- Turn OFF IC
2000
dv / dt, dv / dt -- V / μs
300
200
100
8
9
IT15746
Tc≤70°C
VCE=320V
1750
400
120
IT15924
Tc≤70°C
CM=600μF
IT15745
Tc=70°C
500
80
ICP -- VGE
0
0
Tc=25°C
600
60
160
100
VGE=4V
VCE=320V
700
Maximum Capacitor, CM -- μF
90
40
180
1500
10
20
Gate Series Resistance, RG -- W
2000
0
0
0
IT15923
Collector Current (Pulse), ICP -- A
Turn OFF dv / dt -- V / μs
2
3
Switching test circuit Fig.1
VGE=4V
VCC=320V
ICP=150A
2500
1500
1250
1000
750
500
250
0
20
40
60
80
100
120
140
Collector Current (Pulse), ICP -- A
PD -- Ta
1.4
Allowable Power Dissipation, PD -- W
)
t d(on
100
3
10
10
160
0
180
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
0
20
40
60
80
100
120
140
Turn OFF Collector Current, Turn OFF IC -- A
IT15747
When mounted on FR4 substrate
(11,680mm2✕1.6mm)
1.2
0
tr
2
2
0
Switching test circuit Fig.1
VGE=4V
VCC=320V
f)
t d(of
ICP=150A
CM=600μF
PW=50μS
tf
2
Switching Time, SW Time -- ns
Switching Time, SW Time -- ns
2
SW Time -- RG
3
Switching test circuit Fig.1
VGE=4V
VCC=320V
td (off)
RG=36W
160
IT16955
www.onsemi.com
4
160
180
IT15748
TIG067SS
Definition of dv/dt
dv/dt is defined as the maximum slope of the below VCE curve during turn-off period.
dv/dt=ΔVCE/Δt=ΔVCE/100ns
Overall waveform
Enlarged picture of turn-off period
Turn-off period
V,I
VCE
Turn off VCE
Δt=100ns
ICP
ΔVCE
Turn off IC
IC
VCE
t
Definition of Switching Time
VGE
VGE:90%
VGE:10%
t
VCE
VCE:90%
VCE:10%
VCE:10%
t
IC
td(on)
tr
td(off)
IC:90%
IC:10%
t
tf
www.onsemi.com
5
TIG067SS
Outline Drawing
TIG067SS-TL-2W
Land Pattern Example
Mass (g) Unit
0.082 mm
* For reference
Unit: mm
5.60
1.75
0.65
1.27
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
www.onsemi.com
6