FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 8 --6 A Drain Current (PW≤10s) ID Duty cycle≤1% 9 --7 A Drain Current (PW≤100ms) ID Duty cycle≤1% 20 --15 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 52 --52 Allowable Power Dissipation PD When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s Total Dissipation PT When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C 2.3 Package Dimensions Product & Package Information unit : mm (typ) 7005A-003 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 0.3 0.8 5.0 A W 5 Packing Type : TL Marking 1.5 1.8 MAX W906 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 TL LOT No. Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOP8 http://semicon.sanyo.com/en/network 72110PA TK IM TC-00002248 No. A1809-1/6 FW906 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A 4.5 RDS(on)1 ID=8A, VGS=10V 18 24 mΩ RDS(on)2 ID=4A, VGS=4.5V 29 41 mΩ RDS(on)3 ID=4A, VGS=4V 39 55 mΩ Input Capacitance Ciss 690 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.2 ns Rise Time tr See specified Test Circuit. 44 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 41 ns Fall Time tf Qg See specified Test Circuit. 26 ns VDS=15V, VGS=10V, ID=8A 12 nC VDS=15V, VGS=10V, ID=8A VDS=15V, VGS=10V, ID=8A IS=8A, VGS=0V 2.5 nC Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 V 1.2 1 μA ±10 μA 2.6 1.9 0.81 V S nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA --30 V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --1.2 --2.6 V VDS=--10V, ID=--6A 8.5 ID=--6A, VGS=--10V ID=--3A, VGS=--4.5V 31 41 mΩ RDS(on)2 49 69 mΩ RDS(on)3 ID=--3A, VGS=--4V 57 80 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 600 pF Output Capacitance Coss VDS=--10V, f=1MHz 160 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.6 ns Rise Time tr See specified Test Circuit. 37 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 63 ns Fall Time See specified Test Circuit. 48 ns Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--6A 12 nC VDS=--15V, VGS=--10V, ID=--6A VDS=--15V, VGS=--10V, ID=--6A IS=--6A, VGS=0V 1.9 nC RDS(on)1 Static Drain-to-Source On-State Resistance Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD S 2.7 --0.83 nC --1.2 V No. A1809-2/6 FW906 Switching Time Test Circuit [N-channel] VDD=15V VIN 0V --10V ID=8A RL=1.87Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN VOUT D PW=10μs D.C.≤1% G 50Ω ID -- VDS [Nch] ID -- VGS V [Nch] 12 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 80 0.9 7 6 5 4 2 1 0 VGS=2.5V 0.1 8 3 3.0V 1 9 1.0 0 0.5 1.0 1.5 2.0 2.5 --25°C 3 10 Ta=7 5°C Drain Current, ID -- A 11 3.5V 4 0 S VDS=10V 13 5 0 50Ω 14 4.0 6.0V 4.5V 1 14.0V 0.0V Drain Current, ID -- A 6 FW906 P.G S 8 7 VOUT G FW906 P.G ID= --6A RL=2.5Ω VIN 25°C 10V 0V [P-channel] 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT15821 [Nch] RDS(on) -- Ta 70 4.0 4.5 IT15822 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 ID=4A 60 8A 50 40 30 20 10 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT15823 60 50 =4A V, I D =4A V, I D 5 . 4 = VGS =8A V, I D 10.0 = VGS =4.0 VGS 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT15824 No. A1809-3/6 FW906 5 3 C 5° 2 = Ta 1.0 --2 °C 75 °C 7 25 5 3 IS -- VSD 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] VDS=10V 2 [Nch] VGS=0V 10 7 5 3 2 1.0 7 5 Ta= 75° C 25° C --25 °C | yfs | -- ID 7 3 2 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 0.01 0.2 3 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT15825 SW Time -- ID 100 2 [Nch] IT15826 Ciss, Coss, Crss -- VDS 2 [Nch] f=1MHz td(off) 5 1000 3 2 Ciss, Coss, Crss -- pF tf td(on) 10 7 tr 5 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 Coss 100 Crss 2 3 3 [Nch] Drain Current, ID -- A 7 6 5 4 3 2 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 10 μs 0μ s ID=8A 10 7 5 3 2 DC 0m s 10 s op era tio Operation in this area is limited by RDS(on). 0.1 7 5 3 2 s ms 10 1.0 7 5 3 2 1m 10 n Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 5 IT15830 ID -- VGS --9 2 3 [Pch] V --8 --6 --5 --4 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15831 --1 0 0 --0.5 --1.0 --1.5 --2.0 °C 75 °C --2 VGS= --2.5V 25° C --3 --25 .5 V 0V --4 --3.0V --1 --0.1 [Nch] VDS= --10V --2 0 30 IT15828 --7 --3 0 25 Drain-to-Source Voltage, VDS -- V [Pch] --6 . --4 20 10 0.01 0.01 12 --3 .5 --4. 0V --14.0V -10.0V --5 15 IDP=52A (PW≤10μs) IT15829 ID -- VDS --6 11 Drain Current, ID -- A 1 10 ASO 100 7 5 3 2 8 0 5 Drain-to-Source Voltage, VDS -- V VDS=15V ID=8A 9 0 IT15827 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 5 VDD=15V VGS=10V 1.0 0.1 Drain Current, ID -- A 5 7 2 0 Ciss 7 Ta= Switching Time, SW Time -- ns 7 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 IT15832 No. A1809-4/6 FW906 RDS(on) -- VGS 120 [Pch] RDS(on) -- Ta 120 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --6A 80 60 40 20 0 0 --2 --6 --4 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 7 5 C 5° --2 = Ta 5°C C 2 ° 75 2 1.0 7 5 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT15834 IS -- VSD [Pch] VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 100 --0.01 --0.2 2 [Pch] VDD= --15V VGS= --10V 3 2 tr td(on) 7 7 2 7 5 7 --1.0 2 3 5 Drain Current, ID -- A VGS -- Qg --10 5 7 --10 2 IT15837 [Pch] --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 10 11 12 IT15839 Coss Crss 0 --10 --5 --15 --25 --20 --30 Drain-to-Source Voltage, VDS -- V VDS= --15V ID= --6A --9 Ciss 3 3 3 [Pch] 5 100 2 --1.2 IT15836 f=1MHz 5 2 --0.1 --1.0 1000 tf 10 --0.8 Ciss, Coss, Crss -- VDS 2 Ciss, Coss, Crss -- pF 5 --0.6 Diode Forward Voltage, VSD -- V td(off) 7 --0.4 IT15835 SW Time -- ID 2 Switching Time, SW Time -- ns --3A I = .5V, D 4 = VGS 6A , I D= ---10.0V V GS= 2 3 0.1 --0.01 Gate-to-Source Voltage, VGS -- V = -VGS 60 Ambient Temperature, Ta -- °C 10 3 A = --3 , ID 4.0V IT15833 [Pch] VDS= --10V 2 80 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 100 --25° C ID= --3A 25°C 100 Ta= 75°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT15838 ASO [Pch] IDP= --52A (PW≤10μs) 10 10 10 ID= --6A 0μ μs s 1m s ms 0m s 10 DC 10 s op era tio Operation in this area is limited by RDS(on). n Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15840 No. A1809-5/6 FW906 PD -- Ta [Nch/Pch] When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t al 1.5 1u di ss nit ip ati on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15841 Allowable Power Dissipation(FET1), PD -- W Allowable Power Dissipation, PD -- W 3.0 PD (FET1) -- PD (FET2) 2.4 2.3 2.2 [Nch/Pch] When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Allowable Power Dissipation(FET2), PD -- W IT15842 Note on usage : Since the FW906 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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