SANYO FW906

FW906
Ordering number : ENA1809
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW906
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
8
--6
A
Drain Current (PW≤10s)
ID
Duty cycle≤1%
9
--7
A
Drain Current (PW≤100ms)
ID
Duty cycle≤1%
20
--15
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
52
--52
Allowable Power Dissipation
PD
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
Total Dissipation
PT
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
2.3
Package Dimensions
Product & Package Information
unit : mm (typ)
7005A-003
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
8
0.2
0.3
0.8
5.0
A
W
5
Packing Type : TL
Marking
1.5
1.8 MAX
W906
4.4
0.7
0.8
6.0
0.1
1
4
1.27
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : SOP8
http://semicon.sanyo.com/en/network
72110PA TK IM TC-00002248 No. A1809-1/6
FW906
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
4.5
RDS(on)1
ID=8A, VGS=10V
18
24
mΩ
RDS(on)2
ID=4A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=4A, VGS=4V
39
55
mΩ
Input Capacitance
Ciss
690
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9.2
ns
Rise Time
tr
See specified Test Circuit.
44
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
41
ns
Fall Time
tf
Qg
See specified Test Circuit.
26
ns
VDS=15V, VGS=10V, ID=8A
12
nC
VDS=15V, VGS=10V, ID=8A
VDS=15V, VGS=10V, ID=8A
IS=8A, VGS=0V
2.5
nC
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
30
V
1.2
1
μA
±10
μA
2.6
1.9
0.81
V
S
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
--30
V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--1.2
--2.6
V
VDS=--10V, ID=--6A
8.5
ID=--6A, VGS=--10V
ID=--3A, VGS=--4.5V
31
41
mΩ
RDS(on)2
49
69
mΩ
RDS(on)3
ID=--3A, VGS=--4V
57
80
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
600
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
160
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
120
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.6
ns
Rise Time
tr
See specified Test Circuit.
37
ns
Turn-OFF Delay Time
td(off)
tf
See specified Test Circuit.
63
ns
Fall Time
See specified Test Circuit.
48
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--6A
12
nC
VDS=--15V, VGS=--10V, ID=--6A
VDS=--15V, VGS=--10V, ID=--6A
IS=--6A, VGS=0V
1.9
nC
RDS(on)1
Static Drain-to-Source On-State Resistance
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
S
2.7
--0.83
nC
--1.2
V
No. A1809-2/6
FW906
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
0V
--10V
ID=8A
RL=1.87Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
ID -- VDS
[Nch]
ID -- VGS
V
[Nch]
12
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
80
0.9
7
6
5
4
2
1
0
VGS=2.5V
0.1
8
3
3.0V
1
9
1.0
0
0.5
1.0
1.5
2.0
2.5
--25°C
3
10
Ta=7
5°C
Drain Current, ID -- A
11
3.5V
4
0
S
VDS=10V
13
5
0
50Ω
14
4.0
6.0V
4.5V
1
14.0V 0.0V
Drain Current, ID -- A
6
FW906
P.G
S
8
7
VOUT
G
FW906
P.G
ID= --6A
RL=2.5Ω
VIN
25°C
10V
0V
[P-channel]
3.0
3.5
Gate-to-Source Voltage, VGS -- V
IT15821
[Nch]
RDS(on) -- Ta
70
4.0
4.5
IT15822
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
ID=4A
60
8A
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT15823
60
50
=4A
V, I D
=4A
V, I D
5
.
4
=
VGS
=8A
V, I D
10.0
=
VGS
=4.0
VGS
40
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT15824
No. A1809-3/6
FW906
5
3
C
5°
2
=
Ta
1.0
--2
°C
75
°C
7
25
5
3
IS -- VSD
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
VDS=10V
2
[Nch]
VGS=0V
10
7
5
3
2
1.0
7
5
Ta=
75°
C
25°
C
--25
°C
| yfs | -- ID
7
3
2
0.1
7
5
3
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
0.01
0.2
3
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
IT15825
SW Time -- ID
100
2
[Nch]
IT15826
Ciss, Coss, Crss -- VDS
2
[Nch]
f=1MHz
td(off)
5
1000
3
2
Ciss, Coss, Crss -- pF
tf
td(on)
10
7
tr
5
3
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
2
Coss
100
Crss
2
3
3
[Nch]
Drain Current, ID -- A
7
6
5
4
3
2
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
10
μs
0μ
s
ID=8A
10
7
5
3
2
DC
0m
s
10
s
op
era
tio
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
s
ms
10
1.0
7
5
3
2
1m
10
n
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
5
IT15830
ID -- VGS
--9
2 3
[Pch]
V
--8
--6
--5
--4
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT15831
--1
0
0
--0.5
--1.0
--1.5
--2.0
°C
75
°C
--2
VGS= --2.5V
25°
C
--3
--25
.5
V
0V
--4
--3.0V
--1
--0.1
[Nch]
VDS= --10V
--2
0
30
IT15828
--7
--3
0
25
Drain-to-Source Voltage, VDS -- V
[Pch]
--6
.
--4
20
10
0.01
0.01
12
--3
.5
--4.
0V
--14.0V -10.0V
--5
15
IDP=52A (PW≤10μs)
IT15829
ID -- VDS
--6
11
Drain Current, ID -- A
1
10
ASO
100
7
5
3
2
8
0
5
Drain-to-Source Voltage, VDS -- V
VDS=15V
ID=8A
9
0
IT15827
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
3
5
VDD=15V
VGS=10V
1.0
0.1
Drain Current, ID -- A
5
7
2
0
Ciss
7
Ta=
Switching Time, SW Time -- ns
7
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
IT15832
No. A1809-4/6
FW906
RDS(on) -- VGS
120
[Pch]
RDS(on) -- Ta
120
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--6A
80
60
40
20
0
0
--2
--6
--4
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
7
5
C
5°
--2
=
Ta
5°C
C 2
°
75
2
1.0
7
5
40
20
--40
--20
0
20
40
60
80
100
120
140
160
IT15834
IS -- VSD
[Pch]
VGS=0V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
100
--0.01
--0.2
2
[Pch]
VDD= --15V
VGS= --10V
3
2
tr
td(on)
7
7
2
7
5
7 --1.0
2
3
5
Drain Current, ID -- A
VGS -- Qg
--10
5
7 --10
2
IT15837
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9
Total Gate Charge, Qg -- nC
10
11
12
IT15839
Coss
Crss
0
--10
--5
--15
--25
--20
--30
Drain-to-Source Voltage, VDS -- V
VDS= --15V
ID= --6A
--9
Ciss
3
3
3
[Pch]
5
100
2
--1.2
IT15836
f=1MHz
5
2
--0.1
--1.0
1000
tf
10
--0.8
Ciss, Coss, Crss -- VDS
2
Ciss, Coss, Crss -- pF
5
--0.6
Diode Forward Voltage, VSD -- V
td(off)
7
--0.4
IT15835
SW Time -- ID
2
Switching Time, SW Time -- ns
--3A
I =
.5V, D
4
=
VGS
6A
, I D= ---10.0V
V GS=
2
3
0.1
--0.01
Gate-to-Source Voltage, VGS -- V
= -VGS
60
Ambient Temperature, Ta -- °C
10
3
A
= --3
, ID
4.0V
IT15833
[Pch]
VDS= --10V
2
80
0
--60
--16
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
100
--25°
C
ID= --3A
25°C
100
Ta=
75°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT15838
ASO
[Pch]
IDP= --52A (PW≤10μs)
10
10
10
ID= --6A
0μ
μs
s
1m
s
ms
0m
s
10
DC
10
s
op
era
tio
Operation in this
area is limited by RDS(on).
n
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
--0.01
--0.01 2 3
5 7 --0.1
2 3
5 7--1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT15840
No. A1809-5/6
FW906
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.5
2.3
2.0
To
t
al
1.5
1u
di
ss
nit
ip
ati
on
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15841
Allowable Power Dissipation(FET1), PD -- W
Allowable Power Dissipation, PD -- W
3.0
PD (FET1) -- PD (FET2)
2.4
2.3
2.2
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Allowable Power Dissipation(FET2), PD -- W IT15842
Note on usage : Since the FW906 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1809-6/6