Si4336DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 25 0.0042 at VGS = 4.5 V 22 Qg (Typ) 36 • Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology • Qg Optimized • 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • Synchronous Buck Low-Side - Notebook - Server - Workstation • Synchronous Rectifier, POL SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4336DY-T1 Si4336DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 17 20 13 70 1.3 50 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range A 2.9 IAS PD V 25 IDM Continuous Source Current (Diode Conduction)a Avalanche Current ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72417 S-70316-Rev. D, 12-Feb-07 www.vishay.com 1 Si4336DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min 1.0 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a 3.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 25 A 0.0026 0.00325 VGS = 4.5 V, ID = 22 A 0.0033 0.0042 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 Ω S 1.1 V Dynamicb Input Capacitance Ciss 5600 Output Capacitance Coss Reverse Transfer Capacitance Crss 415 Total Gate Charge Qg 36 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID = 20 A VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω td(off) Turn-Off Delay Time tf Fall Time nC 18 0.8 tr Rise Time 50 10 td(on) Turn-On Delay Time pF 860 trr Source-Drain Reverse Recovery Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. IF = 2.9 A, di/dt = 100 A/µs 1.3 2.0 24 35 16 25 90 140 32 50 45 70 Ω ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 thru 4 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 30 20 10 40 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0.0 www.vishay.com 2 0.4 0.8 1.2 1.6 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72417 S-70316-Rev. D, 12-Feb-07 Si4336DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7000 0.005 Ciss Capacitance (pF) VGS = 4.5 V 0.003 VGS = 10 V 5000 4000 3000 - 0.002 C r DS(on) - On-Resistance ( Ω) 6000 0.004 2000 Coss 0.001 Crss 1000 0 0.000 0 10 20 ID - 30 40 0 50 6 12 VDS Drain Current (A) - On-Resistance vs. Drain Current 30 Drain-to-Source Voltage (V) 1.6 VDS = 15 V ID = 20 A VGS = 10 V ID = 25 A 1.4 rDS(on) - On-Resistance (Normalized) 5 4 3 2 - Gate-to-Source Voltage (V) 24 Capacitance 6 V GS 18 1.2 1.0 0.8 1 0 0 5 10 Qg 15 - 20 25 30 35 40 0.6 - 50 45 Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.015 50 On-Resistance ( Ω) TJ = 150 °C 0.006 0.003 0.000 0.1 0.00 ID = 25 A 0.009 - TJ = 25 °C 1 r DS(on) I S - Source Current (A) 0.012 10 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72417 S-70316-Rev. D, 12-Feb-07 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4336DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 ID = 250 µA 50 0.0 40 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 600 Time (sec) Single Pulse Power Threshold Voltage 100 *Limited by rDS(on) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25 °C Single Pulse dc 0.01 0.0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72417 S-70316-Rev. D, 12-Feb-07 Si4336DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72417. Document Number: 72417 S-70316-Rev. D, 12-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1