C35 SERIES SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit (1) Peak repetitive forward and reverse blocking voltage (TC = -65 to +125°C) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N VDRM or VRRM 25 50 100 150 200 250 300 400 500 600 700 800 Volts Non-repetitive peak reverse voltage (TC = -65 to +125°C, V < 5.0ms) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N VRSM Forward current RMS (all conduction angles) IT(RMS) 35 Amps ITSM 225 Amps Circuit fusing considerations (t = 8.3ms) 2 It 75 A2s Forward peak gate power PGM 5 Watts Forward average gate power PG(AV) 0.5 Watts Peak reverse gate voltage VGRM 5 Volts Operating junction temperature range TJ -65 to +125 °C Storage temperature range Tstg -65 to +150 °C Peak non-repetitive surge current (1cycle, 60 Hz) 35 75 150 225 300 350 400 500 600 720 840 960 Volts Rev. 20150306 High-reliability discrete products and engineering services since 1977 C35 SERIES SILICON CONTROLLED RECTIFIER THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 1.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak reverse or forward blocking current (VD = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N Average forward or reverse blocking current (VD = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N Symbol IDRM or IRRM IDRM(AV) or IRRM(AV) Min Typ. Max - - 13 12 11 10 8 6 5 4.5 4 - - 6.5 6 5.5 5 4 3 2.5 2.25 2 - - 2 Unit mA mA Peak on-state voltage (ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 50Ω) (VD = 12V, RL = 50Ω, TC = -65°C) IGT - 6 - 40 80 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 50Ω, TC = -65°C to +125°C) (VD = Rated VDRM, RL = 1000Ω, TC = 125°C) VGT 0.25 - 3 - Volts - - 100 10 20 25 - - Holding current (VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A) Critical rate of rise of forward blocking voltage (VD = Rated VDRM, TC = 125°C) C35U, F, M, S, N C35A, G, B, H C35C, D, E IH dv/dt Volts mA V/µs Rev. 20150306 High-reliability discrete products and engineering services since 1977 C35 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 Marking Body painted, alpha-numeric Polarity Cathode is stud Rev. 20150306