C35 SERIES.aspx?ext=

C35 SERIES
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
FEATURES

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
(1)
Peak repetitive forward and reverse blocking voltage
(TC = -65 to +125°C)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
VDRM or VRRM
25
50
100
150
200
250
300
400
500
600
700
800
Volts
Non-repetitive peak reverse voltage
(TC = -65 to +125°C, V < 5.0ms)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
VRSM
Forward current RMS (all conduction angles)
IT(RMS)
35
Amps
ITSM
225
Amps
Circuit fusing considerations (t = 8.3ms)
2
It
75
A2s
Forward peak gate power
PGM
5
Watts
Forward average gate power
PG(AV)
0.5
Watts
Peak reverse gate voltage
VGRM
5
Volts
Operating junction temperature range
TJ
-65 to +125
°C
Storage temperature range
Tstg
-65 to +150
°C
Peak non-repetitive surge current (1cycle, 60 Hz)
35
75
150
225
300
350
400
500
600
720
840
960
Volts
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
C35 SERIES
SILICON CONTROLLED RECTIFIER
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
Maximum
Unit
RӨJC
1.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak reverse or forward blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Average forward or reverse blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Symbol
IDRM or
IRRM
IDRM(AV) or
IRRM(AV)
Min
Typ.
Max
-
-
13
12
11
10
8
6
5
4.5
4
-
-
6.5
6
5.5
5
4
3
2.5
2.25
2
-
-
2
Unit
mA
mA
Peak on-state voltage
(ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
(VD = 12V, RL = 50Ω, TC = -65°C)
IGT
-
6
-
40
80
mA
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω, TC = -65°C to +125°C)
(VD = Rated VDRM, RL = 1000Ω, TC = 125°C)
VGT
0.25
-
3
-
Volts
-
-
100
10
20
25
-
-
Holding current
(VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A)
Critical rate of rise of forward blocking voltage
(VD = Rated VDRM, TC = 125°C)
C35U, F, M, S, N
C35A, G, B, H
C35C, D, E
IH
dv/dt
Volts
mA
V/µs
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
C35 SERIES
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Body painted, alpha-numeric
Polarity
Cathode is stud
Rev. 20150306