Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders For DC-DC converter Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features 13.5±0.5 2.54±0.15 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45–0.1 1.27 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Parameter Symbol Collector cutoff current +0.2 0.45–0.1 1.27 3.2 ■ Absolute Maximum Ratings Conditions min typ max Unit ICBO VCB = 25V, IE = 0 100 nA ICEO VCE = 20V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 2V, IC = 500mA*2 90 hFE2 VCE = 2V, IC = 1A*2 50 VBE(sat) IC = 500mA, IB = 50mA*2 Forward current transfer ratio Base to emitter saturation voltage V 330 100 1.2 50mA*2 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 150 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 12 0.5 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1 Transistor 2SC1518 IC — VCE VCE(sat) — IC 1.2 1.0 1.0 Collector current IC (A) 0.8 0.6 0.4 0.2 IB=5.0mA 4.5mA 4.0mA 0.8 3.5mA 0.6 3.0mA 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3 4 5 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 0.3 500 400 Ta=75˚C 25˚C –25˚C 200 100 1 3 Collector current IC (A) 10 3 10 IC/IB=20 10 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 Base to emitter saturation voltage VBE(sat) (V) Cob — VCB VCB=10V Ta=25˚C 160 140 120 100 80 60 40 0 –1 1 1.0 10 20 3 0.3 1.2 fT — I E 180 1 0.1 0 0.1 200 Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C 0.1 0.2 VCE=2V 2 Ta=75˚C 0.3 Ta=25˚C 0.03 hFE — IC 0.3 1 1.4 Collector current IC (A) 600 0.1 3 1.6 30 Base current IB (mA) 0 0.01 0.03 10 Collector current IC (A) IC/IB=10 0.01 0.01 0.03 0 300 10 30 IC — VBE(sat) 100 VCE=2V Ta=25˚C 0.9 2 8 IC/IB=20 VBE(sat) — IC 1.0 1 6 100 Collector to emitter voltage VCE (V) IC — IB 0 4 Collector current IC (A) 0 50 Collector output capacitance Cob (pF) Collector power dissipation PC (W) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Transistor 2SC1518 ICBO — Ta 104 ICEO — Ta 105 VCB=25V Area of safe operation (ASO) VCE=20V Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) Single pulse Ta=25˚C 3 104 103 102 10 103 102 10 ICP 1 IC t=50ms 0.3 DC 0.1 10 0.03 1 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3