PANASONIC 2SC4208

Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
Unit: mm
5.0±0.2
4.0±0.2
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Collector to
2SC4208
base voltage
2SC4208A
Collector to
2SC4208
Ratings
30
VCBO
Unit
+0.15
1.27
25
1.27
V
50
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
1
A
Collector current
IC
500
mA
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Symbol
Conditions
min
ICBO
VCB = 20V, IE = 0
VCBO
IC = 10µA, IE = 0
VCEO
IC = 10mA, IB = 0
VEBO
IE = 10µA, IC = 0
7
hFE1*1
VCE = 10V, IC = 150mA*2
85
hFE2
VCE = 10V, IB = 500mA*2
40
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA
Base to emitter saturation voltage
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Collector to base
2SC4208
voltage
2SC4208A
Collector to emitter
2SC4208
voltage
2SC4208A
Emitter to base voltage
Forward current transfer ratio
1:Emitter
2:Collector
3:Base
TO–92NL Package
1 2 3
(Ta=25˚C)
Parameter
Collector cutoff current
+0.15
0.45 –0.1
2.54±0.15
Collector power dissipation
■ Electrical Characteristics
0.45 –0.1
V
60
VCEO
emitter voltage 2SC4208A
0.7±0.1
13.5±0.5
●
Low collector to emitter saturation voltage VCE(sat).
Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
Allowing supply with the radial taping.
0.7±0.2
●
2.3±0.2
●
8.0±0.2
■ Features
typ
FE1
Unit
0.1
µA
30
V
60
25
V
50
V
340
0.35
0.6
IC = 300mA, IB = 30mA
1.1
1.5
VCB = 10V, IE = –50mA, f = 200MHz
150
V
V
MHz
6
15
*2
*1h
max
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SC4208, 2SC4208A
PC — Ta
IC — VCE
Ta=25˚C
0.6
0.4
IB=10mA
9mA
8mA
7mA
6mA
5mA
600
500
Collector current IC (mA)
0.8
4mA
400
3mA
300
2mA
200
1mA
600
500
400
300
200
0.2
100
100
0
60
80 100 120 140 160
0
0
4
30
10
3
1
Ta=75˚C
25˚C
–25˚C
0.1
0.03
0.3
1
3
30
10
3
25˚C
Ta=75˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
10
0.1
fT — IE
0.3
200
160
120
80
40
Collector output capacitance Cob (pF)
VCB=10V
Ta=25˚C
1
3
Emitter current IE (mA)
–100
8
10
250
Ta=75˚C
200
25˚C
–25˚C
150
100
50
0
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
VCER — RBE
8
6
4
2
0
–30
6
VCE=10V
10
IE=0
f=1MHz
Ta=25˚C
10
4
300
Cob — VCB
12
–10
2
Base current IB (mA)
Collector current IC (A)
240
–3
0
IC/IB=10
Collector current IC (A)
0
–1
20
hFE — IC
100
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10
0.1
16
VBE(sat) — IC
100
0.01
0.01 0.03
12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
8
Forward current transfer ratio hFE
40
120
Collector to emitter voltage VCER (V)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
700
1.0
0
Transition frequency fT (MHz)
800
700
0
2
IC — I B
800
Collector current IC (mA)
Collector power dissipation PC (W)
1.2
IC=2mA
Ta=25˚C
100
80
60
2SA4208A
40
2SA4208
20
0
1
3
10
30
100
Collector to base voltage VCB (V)
1
3
10
30
100
300
1000
Base to emitter resistance RBE (kΩ)
Transistor
2SC4208, 2SC4208A
ICEO — Ta
104
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
ICEO (Ta)
ICEO (Ta=25˚C)
103
102
10
ICP
1
IC
t=10ms
0.3
t=1s
DC
0.1
0.03
0.01
2SC4208
2SC4208A
Collector current IC (A)
3
0.003
1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3