Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SC4208 base voltage 2SC4208A Collector to 2SC4208 Ratings 30 VCBO Unit +0.15 1.27 25 1.27 V 50 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol Conditions min ICBO VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 10mA, IB = 0 VEBO IE = 10µA, IC = 0 7 hFE1*1 VCE = 10V, IC = 150mA*2 85 hFE2 VCE = 10V, IB = 500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA Base to emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Collector to base 2SC4208 voltage 2SC4208A Collector to emitter 2SC4208 voltage 2SC4208A Emitter to base voltage Forward current transfer ratio 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 (Ta=25˚C) Parameter Collector cutoff current +0.15 0.45 –0.1 2.54±0.15 Collector power dissipation ■ Electrical Characteristics 0.45 –0.1 V 60 VCEO emitter voltage 2SC4208A 0.7±0.1 13.5±0.5 ● Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7±0.2 ● 2.3±0.2 ● 8.0±0.2 ■ Features typ FE1 Unit 0.1 µA 30 V 60 25 V 50 V 340 0.35 0.6 IC = 300mA, IB = 30mA 1.1 1.5 VCB = 10V, IE = –50mA, f = 200MHz 150 V V MHz 6 15 *2 *1h max pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SC4208, 2SC4208A PC — Ta IC — VCE Ta=25˚C 0.6 0.4 IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 Collector current IC (mA) 0.8 4mA 400 3mA 300 2mA 200 1mA 600 500 400 300 200 0.2 100 100 0 60 80 100 120 140 160 0 0 4 30 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.3 1 3 30 10 3 25˚C Ta=75˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 fT — IE 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 8 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 6 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 4 300 Cob — VCB 12 –10 2 Base current IB (mA) Collector current IC (A) 240 –3 0 IC/IB=10 Collector current IC (A) 0 –1 20 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 0.1 16 VBE(sat) — IC 100 0.01 0.01 0.03 12 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 8 Forward current transfer ratio hFE 40 120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 700 1.0 0 Transition frequency fT (MHz) 800 700 0 2 IC — I B 800 Collector current IC (mA) Collector power dissipation PC (W) 1.2 IC=2mA Ta=25˚C 100 80 60 2SA4208A 40 2SA4208 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistor 2SC4208, 2SC4208A ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 ICP 1 IC t=10ms 0.3 t=1s DC 0.1 0.03 0.01 2SC4208 2SC4208A Collector current IC (A) 3 0.003 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3