Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 4.0±0.2 ● ● 0.7±0.2 ■ Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 13.5±0.5 0.7±0.1 +0.15 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 1 2 3 1:Emitter 2:Collector 3:Base TO–92NL Package 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ Unit –2 µA ICBO Collector to emitter voltage VCEO IC = –100µA, IB = 0 –200 V Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 V Forward current transfer ratio hFE * VCE = –10V, IC = –5mA 60 Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE VCB = –12V, IE = 0 max Collector cutoff current 220 –1.5 50 80 5 V MHz 10 pF Rank classification Rank Q R hFE 60 ~ 150 100 ~ 220 1 2SB1221 Transistor PC — Ta IC — VCE 1.2 IC — I B –120 –120 –100 0.8 0.6 0.4 0.2 –60 – 0.6mA – 0.4mA –40 – 0.2mA –20 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –60 –40 0 0 –2 –4 –6 –8 –10 0 Collector to emitter voltage VCE (V) IB — VBE – 0.4 – 0.8 –1.2 IC — VBE –2.4 –100 VCE=–10V 25˚C Collector current IC (mA) –100 –1.6 –1.2 – 0.8 – 0.4 –2.0 Ta=75˚C –2.4 VCE(sat) — IC –120 VCE=–10V Ta=25˚C –2.0 –1.6 Base current IB (mA) –25˚C –80 –60 Collector to emitter saturation voltage VCE(sat) (V) 20 –80 –20 0 0 Base current IB (mA) –100 –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA –80 VCE=–10V Ta=25˚C Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C IB=–2mA IC/IB=10 –30 –10 –3 –1 – 0.3 –40 25˚C Ta=75˚C – 0.1 –20 –25˚C – 0.03 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2 0 Base to emitter voltage VBE (V) – 0.4 –2.0 200 Ta=75˚C 150 25˚C –25˚C 50 –3 –10 –30 Collector current IC (mA) –100 –3 –10 –30 –100 16 VCB=–10V Ta=25˚C 140 120 100 80 60 40 0 0.1 –1 Collector current IC (mA) Cob — VCB 20 –1 – 0.01 – 0.1 – 0.3 160 Transition frequency fT (MHz) Forward current transfer ratio hFE 250 0 – 0.1 – 0.3 2 –1.6 fT — I E VCE=–10V 100 –1.2 Base to emitter voltage VBE (V) hFE — IC 300 – 0.8 0.3 1 3 10 30 Emitter current IE (mA) 100 Collector output capacitance Cob (pF) 0 IE=0 f=1MHz Ta=25˚C 14 12 10 8 6 4 2 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2SB1221 Transistor IEBO — Ta ICBO — Ta 10000 VEB=–5V 1000 1000 ICBO (Ta) ICBO (Ta=25˚C) 3000 IEBO (Ta) IEBO (Ta=25˚C) 3000 300 100 30 VCB=–250V –100 100 30 10 3 3 40 80 120 160 200 Ambient temperature Ta (˚C) ICP t=10ms IC t=1s –30 –10 –3 –1 – 0.3 1 0 Single pulse Ta=25˚C –300 300 10 1 Area of safe operation (ASO) –1000 Collector current IC (A) 10000 0 40 80 120 160 200 Ambient temperature Ta (˚C) – 0.1 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 3