PANASONIC 2SC3941

Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
Unit: mm
4.0±0.2
●
●
0.7±0.2
■ Features
8.0±0.2
5.0±0.2
Low collector to emitter saturation voltage VCE(sat).
Allowing supply with the radial taping.
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–250
V
Collector to emitter voltage
VCEO
–200
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–100
mA
Collector current
IC
–70
mA
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
13.5±0.5
0.7±0.1
+0.15
1.27
1.27
+0.15
0.45 –0.1
2.3±0.2
0.45 –0.1
1 2 3
1:Emitter
2:Collector
3:Base
TO–92NL Package
2.54±0.15
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
–2
µA
ICBO
Collector to emitter voltage
VCEO
IC = –100µA, IB = 0
–200
V
Emitter to base voltage
VEBO
IE = –1µA, IC = 0
–5
V
Forward current transfer ratio
hFE
*
VCE = –10V, IC = –5mA
60
Collector to emitter saturation voltage
VCE(sat)
IC = –50mA, IB = –5mA
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
*h
FE
VCB = –12V, IE = 0
max
Collector cutoff current
220
–1.5
50
80
5
V
MHz
10
pF
Rank classification
Rank
Q
R
hFE
60 ~ 150
100 ~ 220
1
2SB1221
Transistor
PC — Ta
IC — VCE
1.2
IC — I B
–120
–120
–100
0.8
0.6
0.4
0.2
–60
– 0.6mA
– 0.4mA
–40
– 0.2mA
–20
0
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
–60
–40
0
0
–2
–4
–6
–8
–10
0
Collector to emitter voltage VCE (V)
IB — VBE
– 0.4 – 0.8 –1.2
IC — VBE
–2.4
–100
VCE=–10V
25˚C
Collector current IC (mA)
–100
–1.6
–1.2
– 0.8
– 0.4
–2.0
Ta=75˚C
–2.4
VCE(sat) — IC
–120
VCE=–10V
Ta=25˚C
–2.0
–1.6
Base current IB (mA)
–25˚C
–80
–60
Collector to emitter saturation voltage VCE(sat) (V)
20
–80
–20
0
0
Base current IB (mA)
–100
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
–80
VCE=–10V
Ta=25˚C
Collector current IC (mA)
1.0
Collector current IC (mA)
Collector power dissipation PC (W)
Ta=25˚C
IB=–2mA
IC/IB=10
–30
–10
–3
–1
– 0.3
–40
25˚C
Ta=75˚C
– 0.1
–20
–25˚C
– 0.03
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
0
Base to emitter voltage VBE (V)
– 0.4
–2.0
200
Ta=75˚C
150
25˚C
–25˚C
50
–3
–10
–30
Collector current IC (mA)
–100
–3
–10
–30
–100
16
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
0
0.1
–1
Collector current IC (mA)
Cob — VCB
20
–1
– 0.01
– 0.1 – 0.3
160
Transition frequency fT (MHz)
Forward current transfer ratio hFE
250
0
– 0.1 – 0.3
2
–1.6
fT — I E
VCE=–10V
100
–1.2
Base to emitter voltage VBE (V)
hFE — IC
300
– 0.8
0.3
1
3
10
30
Emitter current IE (mA)
100
Collector output capacitance Cob (pF)
0
IE=0
f=1MHz
Ta=25˚C
14
12
10
8
6
4
2
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
2SB1221
Transistor
IEBO — Ta
ICBO — Ta
10000
VEB=–5V
1000
1000
ICBO (Ta)
ICBO (Ta=25˚C)
3000
IEBO (Ta)
IEBO (Ta=25˚C)
3000
300
100
30
VCB=–250V
–100
100
30
10
3
3
40
80
120
160
200
Ambient temperature Ta (˚C)
ICP
t=10ms
IC
t=1s
–30
–10
–3
–1
– 0.3
1
0
Single pulse
Ta=25˚C
–300
300
10
1
Area of safe operation (ASO)
–1000
Collector current IC (A)
10000
0
40
80
120
160
200
Ambient temperature Ta (˚C)
– 0.1
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
3