Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 Unit: mm 5.0±0.2 4.0±0.2 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.7±0.1 13.5±0.5 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7±0.2 ● +0.15 0.45 –0.1 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ● 8.0±0.2 ■ Features 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 80 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 Forward current transfer ratio *1 VCE = 10V, IC = 150mA*2 130 330 hFE2 VCE = 5V, IC = 500mA*2 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 50 100 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SC3939 Transistor PC — Ta IC — VCE 1.2 IC — I B 1.2 1.2 1.0 0.8 0.6 0.4 0.2 8mA 7mA 0.8 6mA 5mA 0.6 4mA 3mA 0.4 2mA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 IC/IB=10 8 10 0 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 30 10 3 25˚C Ta=–25˚C 1 10 30 100 300 75˚C 0.3 0.1 0.03 1000 3 10 100 300 1000 40 –10 Ta=75˚C 200 25˚C –25˚C 150 100 50 3 –30 Emitter current IE (mA) –100 10 30 100 300 1000 Collector current IC (mA) ICBO — Ta 104 VCB=20V IE=0 f=1MHz Ta=25˚C 40 103 30 20 102 10 10 0 –3 250 1 ICBO (Ta) ICBO (Ta=25˚C) 80 0 –1 30 50 Collector output capacitance Cob (pF) 120 10 VCE=10V Cob — VCB 160 8 300 Collector current IC (mA) VCB=10V Ta=25˚C 6 0 1 fT — IE 200 4 hFE — IC 0.01 3 2 Base current IB (mA) IC/IB=10 Collector current IC (mA) Transition frequency fT (MHz) 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 4 VBE(sat) — IC 10 1 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 0.6 0 0 Forward current transfer ratio hFE 20 0.8 0.2 1mA 0 0 2 1.0 9mA 0.2 0 VCE=10V Ta=25˚C IB=10mA Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) 2SC3939 Transistor ICEO — Ta 105 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 103 102 1 ICP t=10ms IC 0.3 t=1s DC 0.1 0.03 0.01 10 0.003 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3