Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features Unit 250 2SC1573A base voltage Collector to VCBO 2SC1573B 400 2SC1573 200 2SC1573A emitter voltage 300 300 VCEO V V 2SC1573B VEBO Peak collector current 7 V ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol Conditions ICBO VCB = 12V, IE = 0 VCEO IC = 100µA, IB = 0 2SC1573 VEBO IE = 1µA, IC = 0 Forward current transfer ratio hFE* VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 2SC1573B 2SC1573 2SC1573A capacitance *h FE 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package min typ max Unit 2 µA V 300 5 2SC1573A Collector output 3 400 2SC1573 voltage 2 200 2SC1573A 2SC1573B Emitter to base 1 (Ta=25˚C) Parameter Collector cutoff current voltage +0.2 0.45–0.1 1.27 400 Emitter to base voltage Collector to emitter +0.2 0.45–0.1 1.27 3.2 Collector to 13.5±0.5 2.54±0.15 2SC1573 Cob VCB = 10V, IE = 0, f = 1MHz 2SC1573B V 7 30 220 1.2 50 80 V MHz 5 10 4 8 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 *2SC1573 for Ranks Q and R only 1 2SC1573, 2SC1573A, 2SC1573B Transistor IC — VCE 1.0 0.8 0.6 0.4 0.2 1.4mA 1.0mA 80 0.8mA 0.6mA 60 0.4mA 40 0.2mA 40 60 80 100 120 140 160 2 Collector to emitter saturation voltage VCE(sat) (V) 80 60 40 20 0 0.8 4 6 8 10 1.2 1.6 2.0 10 3 1 25˚C 0.3 Ta=75˚C 0.1 –25˚C Transition frequency fT (MHz) –25˚C 60 0.01 0.1 0 0.3 1 3 10 30 100 0 3 10 0.2 30 Collector current IC (mA) 100 0.6 0.8 1.0 Cob — VCB 10 140 120 100 80 60 40 0 –1 0.4 Base to emitter voltage VBE (V) 20 1 1.0 0.5 VCB=10V Ta=25˚C 25˚C 0.3 1.5 0.03 VCE=10V Ta=75˚C 2.0 2.0 fT — I E 180 1.6 2.5 160 240 1.2 VCE=10V Ta=25˚C 30 hFE — IC 300 0.8 3.0 IC/IB=10 Collector current IC (mA) 360 120 0.4 Base to emitter voltage VBE (V) IB — VBE 100 Base current IB (mA) 0 0.1 0 Collector output capacitance Cob (pF) Collector current IC (mA) 100 0.4 40 VCE(sat) — IC VCE=10V Ta=25˚C 0 60 Collector to emitter voltage VCE (V) IC — IB 120 –25˚C 0 0 Ambient temperature Ta (˚C) Ta=75˚C 80 20 Base current IB (mA) 20 25˚C 100 1.2mA 0 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=2mA 20 0 2 IC — VBE 120 1.8mA 1.6mA 100 Collector current IC (mA) Collector power dissipation PC (W) 120 Collector current IC (mA) PC — Ta 1.2 IE=0 f=1MHz Ta=25˚C 9 8 7 6 5 4 3 2 1 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) 2SC1573, 2SC1573A, 2SC1573B Transistor ICBO — Ta 104 IEBO — Ta 104 VCB=250V Area of safe operation (ASO) 1000 VEB=5V Single pulse Ta=25˚C 103 ICEO (Ta) ICEO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) 103 Collector current IC (A) 300 102 10 102 10 ICP 100 t=10ms IC t=1ms 30 DC 10 3 1 0.3 1 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 0.1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3