Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC 0.75 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Parameter Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ■ Features 4.0±0.2 5.1±0.2 5.0±0.2 Conditions min max Unit ICBO VCB = 10V, IE = 0 typ 0.1 µA ICEO VCE = 10V, IB = 0 1.0 µA 0.1 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 MHz 50 *2 *1h FE1 V pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD965 Transistor PC — Ta IC — VCE 1.0 IC — VBE 2.4 6 VCE=2V IB=7mA 0.6 0.4 0.2 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 3 2.0 0 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 250 200 150 100 50 Emitter current IE (A) Ta=75˚C 400 25˚C 300 –25˚C 200 100 –10 0.1 0.3 1 3 10 Area of safe operation (ASO) 100 IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 ICP IC 3 t=10ms t=1s 1 0.3 0.1 20 0.03 0 –3 2.0 Collector current IC (A) Collector current IC (A) Collector output capacitance Cob (pF) 300 1.6 VCE=2V Ta=25˚C 0 0.01 0.03 10 Cob — VCB 350 1.2 500 Collector current IC (A) VCB=6V Ta=25˚C 0.8 600 100 –1 0.4 Base to emitter voltage VBE (V) hFE — IC 10 fT — IE 0 – 0.01 – 0.03 – 0.1 – 0.3 2 2.4 30 0.01 0.01 0.03 10 400 Transition frequency fT (MHz) 1.6 IC/IB=30 Collector current IC (A) 2 1.2 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 3 VBE(sat) — IC IC/IB=30 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 20 Ta=75˚C 1 1mA 0 0 25˚C 5 Collector current IC (A) 2.0 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V)