PANASONIC 2SD965

Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
Unit: mm
●
Low collector to emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
5
A
Collector power dissipation
PC
0.75
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
0.45 –0.1
1.27
1.27
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Symbol
Parameter
Collector cutoff current
+0.2
0.45 –0.1
2.3±0.2
●
13.5±0.5
■ Features
4.0±0.2
5.1±0.2
5.0±0.2
Conditions
min
max
Unit
ICBO
VCB = 10V, IE = 0
typ
0.1
µA
ICEO
VCE = 10V, IB = 0
1.0
µA
0.1
µA
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
7
V
hFE1
Forward current transfer ratio
*1
VCE = 2V, IC =
0.5A*2
hFE2
VCE = 2V, IC = 2A*2
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.1A*2
Transition frequency
fT
VCB = 6V, IE = –50mA, f = 200MHz
Collector output capacitance
Cob
VCB = 20V, IE = 0, f = 1MHz
230
600
150
1
150
MHz
50
*2
*1h
FE1
V
pF
Pulse measurement
Rank classification
Rank
Q
R
hFE1
230 ~ 380
340 ~ 600
1
2SD965
Transistor
PC — Ta
IC — VCE
1.0
IC — VBE
2.4
6
VCE=2V
IB=7mA
0.6
0.4
0.2
6mA
1.6
5mA
4mA
1.2
3mA
0.8
2mA
0.4
0
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
0.4
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
0.8
3
2.0
0
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.1
0.3
1
3
250
200
150
100
50
Emitter current IE (A)
Ta=75˚C
400
25˚C
300
–25˚C
200
100
–10
0.1
0.3
1
3
10
Area of safe operation (ASO)
100
IE=0
f=1MHz
Ta=25˚C
80
60
40
Single pulse
Ta=25˚C
30
10 ICP
IC
3
t=10ms
t=1s
1
0.3
0.1
20
0.03
0
–3
2.0
Collector current IC (A)
Collector current IC (A)
Collector output capacitance Cob (pF)
300
1.6
VCE=2V
Ta=25˚C
0
0.01 0.03
10
Cob — VCB
350
1.2
500
Collector current IC (A)
VCB=6V
Ta=25˚C
0.8
600
100
–1
0.4
Base to emitter voltage VBE (V)
hFE — IC
10
fT — IE
0
– 0.01 – 0.03 – 0.1 – 0.3
2
2.4
30
0.01
0.01 0.03
10
400
Transition frequency fT (MHz)
1.6
IC/IB=30
Collector current IC (A)
2
1.2
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
3
0.1
3
VBE(sat) — IC
IC/IB=30
0.3
4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
–25˚C
0
0
Forward current transfer ratio hFE
20
Ta=75˚C
1
1mA
0
0
25˚C
5
Collector current IC (A)
2.0
0.8
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
1
3
10
30
100
Collector to base voltage VCB (V)
0.01
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)