Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. Parameter 2SC1383 base voltage 2SC1384 Collector to 2SC1383 Ratings 30 VCBO 25 V 50 +0.2 VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ICBO 2SC1383 voltage 2SC1384 Collector to emitter 2SC1383 voltage 2SC1384 Emitter to base voltage Conditions 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package min typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 Forward current transfer ratio 1.27 (Ta=25˚C) Symbol Collector to base 0.45–0.1 1.27 1 Parameter Collector cutoff current +0.2 0.45–0.1 Emitter to base voltage ■ Electrical Characteristics 2.54±0.15 Unit V 60 VCEO emitter voltage 2SC1384 +0.3 (Ta=25˚C) Symbol Collector to 0.7–0.2 0.7±0.1 ■ Absolute Maximum Ratings 13.5±0.5 ● 3.2 ● 8.6±0.2 ■ Features *1 VCE = 10V, IC = 500mA*2 max Unit 0.1 µA 30 V 60 25 V 50 5 V 85 160 50 100 340 hFE2 VCE = 5V, IB = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SC1383, 2SC1384 Transistor PC — Ta IC — VCE 1.2 IC — I B 1.5 1.2 1.25 0.8 0.6 0.4 0.2 8mA 1.0 7mA 6mA 0.75 5mA 4mA 3mA 0.5 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 25˚C 75˚C 0.3 0.1 0.03 0.3 140 120 100 80 60 40 20 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –30 6 VCE=10V Cob — VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) Ta=–25˚C 1 0.1 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 10 0.01 0.01 0.03 10 160 0 –1 10 30 fT — IE 180 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 0.8 0.2 1mA 0 0 2 1.0 IB=10mA 9mA 0.25 0 VCE=10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SC1384 40 2SC1383 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SC1383, 2SC1384 Transistor ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 IC t=10ms 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SC1384 ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SC1383 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3