Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Parameter 0.15–0.05 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : U (Ta=25˚C) Parameter Symbol Conditions min typ max 30 Unit Collector to base voltage VCBO IC = 10µA, IE = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE* VCB = 6V, IE = –1mA 65 Base to emitter voltage VBE VCB = 6V, IE = 1mA Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz 0.8 Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB *h FE 450 V V 260 0.72 V 650 MHz 1 pF Rank classification Rank C D hFE 65 ~ 160 100 ~ 260 Marking Symbol UC UD 1 Transistor 2SC3931 PC — Ta IC — VCE 12 Ta=25˚C 10 160 120 80 40 80µA 8 60µA 6 40µA 4 20µA 80 100 120 140 160 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 12 1.6 2.0 30 10 3 1 0.3 25˚C 0.1 0.01 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 1000 800 600 400 200 –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) VCB=6V Ta=25˚C 10 30 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 100 0.3 60 40 20 – 0.3 –1 3 10 30 100 Cre — VCE 80 0 – 0.1 1 Collector current IC (mA) VCB=6V f=2MHz Ta=25˚C 100 180 VCE=6V Zrb — IE 120 120 360 IC/IB=10 fT — IE –3 60 Base current IB (µA) Collector current IC (mA) 1200 –1 0 hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 18 VCE(sat) — IC 30 Ta=75˚C 4 Collector to emitter voltage VCE (V) IC — VBE 25 6 0 0 Forward current transfer ratio hFE 60 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) 10 2 0 Transition frequency fT (MHz) VCE=6V Ta=25˚C IB=100µA Collector current IC (mA) 200 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 240 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC3931 Cob — VCB PG — IE 0.8 0.6 0.4 12 f=100MHz Rg=50Ω Ta=25˚C 35 30 VCE=10V 25 6V 20 15 10 8 6 4 0.2 VCE=6V, 10V 2 5 0 5 10 15 20 25 0 – 0.1 – 0.3 30 Collector to base voltage VCB (V) Reverse transfer susceptance bre (mS) 150 –7mA 100 –2mA 100 12 58 10 IE=– 0.5mA –1mA 8 6 58 25 4 25 2 f=10.7MHz 0 0 3 –30 6 9 0 – 0.1 – 0.3 –100 –1 12 15 Input conductance gie (mS) –10 –30 –100 bfe — gfe 0 10.7 25 yre=gre+jbre VCE=10V –1 –4mA –2 –1mA 58 IE=–7mA –3 –4 100 –5 10.7 58 – 0.4mA –1mA 100 –20 150 –2mA –40 150 –4mA 100 58 –60 f=150MHz IE=–7mA 100 –80 –100 f=150MHz –6 – 0.5 –3 Emitter current IE (mA) bre — gre –4mA 16 14 –10 0 yie=gie+jbie VCE=10V 18 –3 Emitter current IE (mA) bie — gie 20 –1 Forward transfer susceptance bfe (mS) 0 Input susceptance bie (mS) f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) IE=0 f=1MHz Ta=25˚C 1.0 NF — IE 40 Power gain PG (dB) Collector output capacitance Cob (pF) 1.2 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe IE=– 0.5mA –1mA Output susceptance boe (mS) 1.2 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 2 4 6 8 10 Output conductance goe (mS) 3