Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A Unit: mm 5.0±0.2 Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SA1619 base voltage 2SA1619A Collector to 2SA1619 Ratings –30 VCBO –60 8.0±0.2 ● 0.7±0.2 ● 0.7±0.1 13.5±0.5 ■ 4.0±0.2 Features Unit V +0.15 VCEO emitter voltage 2SA1619A –50 V 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A 1 2 3 2.54±0.15 Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol Collector to base 2SA1619 voltage 2SA1619A Collector to emitter 2SA1619 voltage 2SA1619A Emitter to base voltage Forward current transfer ratio 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package (Ta=25˚C) Parameter Collector cutoff current +0.15 0.45 –0.1 2.3±0.2 –25 Conditions ICBO VCB = –20V, IE = 0 VCBO IC = –10µA, IE = 0 VCEO IC = –10mA, IB = 0 min typ max Unit – 0.1 µA –30 V –60 –25 V –50 VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 85 40 V 160 340 hFE2 VCE = –10V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA – 0.35 – 0.6 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA –1.1 –1.5 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 6 V V MHz 15 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SA1619, 2SA1619A PC — Ta IC — VCE Ta=25˚C IB=–10mA –9mA –8mA –7mA –6mA –5mA –600 –500 0.6 –400 –3mA –2mA –200 –1mA –300 –200 0.2 –100 –100 0 60 80 100 120 140 160 0 0 –16 –20 –10 –3 –1 Ta=75˚C –25˚C –30 –10 –3 Ta=–25˚C –1 25˚C 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) fT — IE Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 200 160 120 80 40 0 3 10 –1 –3 30 Emitter current IE (mA) 100 –10 400 300 Ta=75˚C 25˚C –25˚C 200 100 –1 –3 –10 Collector current IC (A) VCER — RBE 16 12 8 4 0 –1 –8 500 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 IE=0 f=1MHz Ta=25˚C 20 –6 VCE=–10V Cob — VCB 24 –4 600 Collector current IC (A) 240 1 –2 Base current IB (mA) IC/IB=10 – 0.3 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –30 – 0.1 –12 VBE(sat) — IC IC/IB=10 – 0.3 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –4 Forward current transfer ratio hFE 40 –120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –500 –300 0 Transition frequency fT (MHz) –600 –4mA –400 0.4 VCE=–10V Ta=25˚C –700 1.0 0.8 –800 Collector current IC (mA) –700 0 2 IC — IB –800 Collector current IC (A) Collector power dissipation PC (W) 1.2 IC=–2mA Ta=25˚C –100 –80 –60 2SA1619A –40 2SA1619 –20 0 –3 –10 –30 –100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistor 2SA1619, 2SA1619A ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C Collector current IC (mA) –3 ICEO (Ta) ICEO (Ta=25˚C) 103 ICP IC –1 t=10ms t=1s – 0.3 102 – 0.1 – 0.03 10 – 0.01 – 0.003 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3