WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead(Pb)-Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change * Low On-Resistance N-CH RDS(ON)<75mΩ@VGS = 4.5V P-CH RDS(ON)<160mΩ@VGS = -4.5V * SOT-8 Package 6 3 GATE 1 2 SOURCE 2 5 4 3 TSOP-6 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Symbol Value N-Channl P-Channl Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V 3.5 -2.5 2.8 -1.97 10 -10 Continuous Drain Current3 TA=25˚C TA=75˚C ID IDM Pulsed Drain Current1 Total Power Dissipation TA=25˚C Maximum Junction-ambient3 Operating Junction Temperature Range Storage Temperature Range A A PD 1.14 W RθJA 110 ˚C/W TJ +150 ˚C Tstg -55~+150 ˚C Device Marking WTV3585=3585 WEITRON http:www.weitron.com.tw 1/8 03-Apr-07 WTV3585 N-Channel Electrical Characteristics (TA = 25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS 20 - - V IDSS - - 1 10 μA IGSS - - ±100 nA VGS(Th) 0.5 - 1.2 V RDS(on) - - 75 125 mΩ gfs - 7 - S Ciss - 230 370 Coss - 55 - Crss - 40 - Rg - 1.1 1.7 Turn-on Delay Time VDS=15V, VGS=5V, ID=1A, RG=3.3Ω, RD=15Ω td(on) - 6 - Rise Time VDS=15V, VGS=5V, ID=1A, RG=3.3Ω, RD=15Ω tr - 8 - td(off) - 10 - tf - 3 - Qg - 4 7 Qgs - 0.7 - Qgd - 2 - VSD - - 1.2 V Trr - 16 - nS Qrr - 8 - nC OFF Characteristics Drain-Source Breakdown Voltage VGS=0,ID=250μA Drain-Source Leakage Current Tj=25°C, VDS=20V, VGS=0V Tj=70°C, VDS=16V, VGS=0V Gate-Source Leakage current VGS=±12V ON Characteristics Gate-Source Threshold Voltage VDS=VGS, ID=250μA Drain-Source On-Resistance VGS=4.5V,ID=3.5A VGS=2.5V,ID=1.2A Forward Transconductance VDS=5V,ID=3A Dymamic Characteristics Input Capacitance VGS=0V, VDS=20V, f=1.0MHz Output Capacitance VGS=0V, VDS=20V, f=1.0MHz Reverse Transfer Capacitance VGS=0V, VDS=20V, f=1.0MHz Gate Resistance f=1.0MHz pF Ω Switching Characteristics Turn-off Delay Time VDS=15V, VGS=5V, ID=1A, RG=3.3Ω, RD=15Ω Fall Time VDS=15V, VGS=5V, ID=1A, RG=3.3Ω, RD=15Ω Total Gate Charge VDS=16V,VGS=4.5V,I D=3A Gate-Source Charge VDS=16V,VGS=4.5V,I D=3A Gate-Source Change VDS=16V,VGS=4.5V,I D=3A ns nC Source-Drain Diode Characteristics Forward On Voltage IS=1.2A, VGS=0V Reverse Recovery Time IS=3A, VGS=0V, dl/dt=100A/µs Reverse Recovery Charge IS=3A, VGS=0V, dl/dt=100A/µs Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t≤5sec; 180°C/W when mounted on Min. copper pad. WEITRON http:www.weitron.com.tw 2/8 03-Apr-07 WTV3585 P-Channel Electrical Characteristics (TA = 25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS -20 - - V IDSS - - -1 -25 μA IGSS - - ±100 nA VGS(Th) - - -1.2 V RDS(on) - - 120 160 300 mΩ gfs - 4.0 - S Ciss - 270 430 Coss - 70 - Crss - 55 - Turn-on Delay Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω td(on) - 6 - Rise Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω tr - 17 - td(off) - 16 - tf - 5 - Total Gate Charge2 VDS=-16V, VGS=-4.5V, ID=-2A Qg - 5 8 Gate-Source Charge VDS=-16V, VGS=-4.5V, ID=-2A Qgs - 1 - Gate-Source Change VDS=-16V, VGS=-4.5V, ID=-2A Qgd - 2 - VSD - - -1.2 V Trr - 20 - nS Qrr - 15 - nC OFF Characteristics Drain-Source Breakdown Voltage VGS=0,ID=-250μA Drain-Source Leakage Current Tj=25°C, VDS=-20V, VGS=0V Tj=70°C, VDS=-16V, VGS=0V Gate-Source Leakage current VGS=±12V ON Characteristics Gate-Source Threshold Voltage VDS=VGS, ID=-250μA Drain-Source On-Resistance2 VGS=-10V, ID=-2.8A VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A Forward Transconductance VDS=-5V,ID=-2A Dymamic Characteristics Input Capacitance VGS=0V, VDS=-20V, f=1.0MHz Output Capacitance VGS=0V, VDS=-20V, f=1.0MHz Reverse Transfer Capacitance VGS=0V, VDS=-20V, f=1.0MHz pF Switching Characteristics Turn-off Delay Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω Fall Time VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω ns nC Source-Drain Diode Characteristics Forward On Voltage2 IS=-1.2A, VGS=0V Reverse Recovery Time2 IS=-2A, VGS=0V, dl/dt=100A/µs Reverse Recovery Charge IS=-2A, VGS=0V, dl/dt=100A/µs Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t≤5sec; 180°C/W when mounted on Min. copper pad. WEITRON http:www.weitron.com.tw 3/8 03-Apr-07 WTV3585 Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature WEITRON http://www.weitron.com.tw 4/8 03-Apr-07 WTV3585 N-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Fig 11. Transfer Characteristics WEITRON http://www.weitron.com.tw 5/8 03-Apr-07 WTV3585 Characteristics Curve P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode WEITRON http://www.weitron.com.tw Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/8 03-Apr-07 WTV3585 P-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Fig 11. Transfer Characteristics WEITRON http://www.weitron.com.tw 7/8 03-Apr-07 WTV3585 TSOP-6 Outline Dimension Unit:mm E E1 D e1 TSOP-6 Top View C REF. Side View θ A1 A2 A Front View 0.25 e b TYP. WEITRON http://www.weitron.com.tw L REF. L1 REF. 8/8 Dim A A1 A2 C D E E1 L L1 θ b e e1 Min Max 1.10 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. 03-Apr-07